electron diffraction technique 中文意思是什麼

electron diffraction technique 解釋
電子衍射法
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • diffraction : 分解
  • technique : n. 1. （專門）技術；（藝術上的）技巧，技能。2. 手法〈如畫法，演奏法等〉。3. 方法。
  1. This calibration is usually carried out by employing a double exposure technique in which the diffraction pattern and electron image of a crystal of molybdenum trioxide are successively exposed

    這個標準通常利用使得衍射模型和一個三氧化鉬的結晶體的電子成像成功展現的雙投照技術來執行。
  2. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  3. The properties of thin films have been investigated with modern analysis technique, such as afm ( atom force microscopy ), sem ( scanning electron microscope ), xrd ( x - ray diffraction ) and rocking curve ( - scan ). and the properties of ybco thin film and its substrate and deposition temperature have been analysed, comparing with lao substrate ' s crystallization quality, ybco thin film properties, such as morphology and degree of grain alignment, was concluded to correlate with the crystal orientation uniform of lao substrate as revealed by xrd

    本文結合afm 、 sem研究ybco薄膜的表面形貌， xrd 、 fwhm分析薄膜的結晶情況，並結合成膜溫度和基片的質量進行一系列結構與性能的對比研究，發現laalo3 （ lao ）基片的質量對ybco薄膜的結構完整性有很大影響，不僅影響了薄膜的c軸取向性，而且影響了ybco的超導性能。
  4. No5 ： image processing based on the combination of high - resolution electron microscopy and electron diffraction ( invited paper ), f. h. li, microscopy research and technique, 40 ( 1998 ) 86 - 100

    場發射高分辨電子顯微鏡在揭示原子解析度晶體缺陷上的應用（特邀論文） ，李方華，科儀新知， 21 （ 1999 ） 8 - 15
  5. In this work, using elemental powders as starting reactant materials several carbide powders such as wc, sic, tic, zrc and corresponding alloys had been fabricated by ball - milling technique. x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), transmission electron microscopy ( tem ) and other measurement techniques had been used to monitor the structural changes of powders after some ball milling time and the properties of the cemented tungsten carbides. and the mechanism for the formation of matal carbides by ma has also been discussed

    本文主要對機械合金化（ ma ）技術在碳化物制備中的應用進行了研究，利用高能球磨，以元素粉末為原料，制備出wc 、 sic 、 tic 、 zrc的粉體以及wc基硬質復合材料，並利用x射線衍射、掃描電鏡、透射電鏡等方法分析和研究了球磨過程粉體的變化以及燒結后硬質合金的性能，對機械合金化制備碳化物的有關機理進行了研究和探索。
  6. The synthesis process of single - wall carbon nanotubes ( swnts ) by catalytically chemical vapor deposition ( ccvd ) was investigated and the product was characterized with transmission electron microscopy ( tem ), electron diffraction ( ed ), electron dispersive spectra ( eds ) and raman scattering spectra etc. pyrolysis of methane over solid catalysts prepared with impregnation, ion - adsorption precipitation, and sol - gel technique can all lead to the growth of swnts

    本文研究了單壁納米碳管的化學氣相沉積法（ cvd ）制備工藝，並運用透射電子顯微鏡（ tem ） 、 x - ray能譜（ eds ）與喇曼（ raman ）光譜等分析手段，對產物及催化劑進行了表徵。採用浸漬法、吸附沉澱法與溶膠凝膠法等制備了催化劑，併合成了單壁納米碳管。
  7. An optimized cvi - pip process has been achieved, by which the c / sic composites with 2. 1 ig / cm3 high density and uniformity are fabricated in 200 hours. the microstructure and composition of pyrolytic carbon interphase and cvi - pip silicon carbide matrix in the c / sic composites are investigated with the help of polarization microscope, scanning electron microscope, and x - ray diffraction technique, etc. the structure characteristic of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and effects of cvi - pip process on it are summarized and discussed. by growth course and feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix analyzed, a whole - course densification mechanism of lamellar - growth - pattern is proposed to explain the densification phenomenon, which makes a systematic understanding on the feature of pyrolytic carbon interphase and cvi - pip silicon carbide matrix, and the multiple stitching interface binding

    根據熱解碳中間相、 cvi - pip系sic基體相的組織構成與外貌特徵，通過對熱解碳中間相、 cvi - pip系sic基體相的生長過程和生長特徵進行分析，提出了基於層生長模式的緻密化過程理論，解釋了熱解碳中間相、 cvi - pip系sic基體相以及釘扎誘導結構多重界面的形成： （ 1 ）在1150下， cvi - sic亞基體相遵從「過飽和?凝聚?融合」機理沉積，以8f型? sic為主，同時還會有少量4h型? sic ，無游離si和游離c存在； （ 2 ） pip - sic亞基體相由非晶態sic以及彌散分佈的- sic微晶、 si - o - c和游離c組成； （ 3 ）熱解碳中間相與碳纖維增強相之間、 cvi - sic亞基體相之間形成滲透釘扎結構過渡界面， pip - sic亞基體相與摘要cvi一sic亞基體相之間形成誘導結構過渡界面。
  8. By analyzing the microstructure and phase composition of sm - fe alloy annealed and nitrided for different time using scanning electron microscopy and x - ray diffraction technique, the optimum values for the annealing time and the nitriding time is determined

    通過對不同退火時間和氮化時間下材料的掃描電子顯微分析和x -射線衍射分析，確定了最佳的退火時間和氮化時間。
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