electron mobility 中文意思是什麼

electron mobility 解釋
電子遷移率
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • mobility : n 1 可動性，活動性，能動性。2 靈活性，可變動性。3 【物理學】動性，遷移率；【化學】淌度；【軍事】...
  1. Firstly, a new interface roughness scattering model is developed using exponential autocovariance functions. the simulation results show that the electron mobility calculated using the exponential model are in good agreement with the experiment data

    先推導了一種sic反型層表面粗糙散射的指數模型，研究證明應用此模型能夠更精確地研究sicmos溝道載流子的輸運規律。
  2. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  3. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  4. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  5. High electron mobility transistor hemt

    高速電子遷移率晶體管
  6. Mgf plays the role of segregation. the third method is to enhance the oel by means of making complex with n - vi compounds. el - vi compounds are very stable and possessing higher electron mobility than organic materials

    但電子不是在真空中，而是在固體中加速的，我們稱它為固態陰極射線發光或類陰極射線發光，它的激發態是成對的電子及空穴。
  7. From which we can draw a conclusion that the hole mobility can experience a 15 % improvement in the strained sige layer while the electron mobility can experience a 48. 5 % improvement in the strained si layer

    通過比較實驗我們可以獲知，應變si材料中的電子遷移率相比于體si材料最大可有48 . 5 %的提高，而應變sige材料中的空穴遷移率相比于體si材料可有近15 %的提高。
  8. The recent development of organic electron transport materials are reviewed as well. several technologies for charge carrier mobility measurement are summarized and compared, and a series of basic principles for designing high - performance organic electron transport materials are suggested as well

    本章還重點綜述了有機電子傳輸材料研究的最新進展，總結和比較了有機材料載流子遷移率的測試方法，並提出了設計高性能有機電子傳輸材料的若干原則。
  9. I - v testing of a single transistor has been carried out. the p - si film is prepared by ela, and electron mobility is calculated about 30cm2 / v

    對用激光晶化法制備的多晶硅薄膜所制備的p - si - tft單管進行了-測試，計算電子遷移率為約30cm ~ 2 v
  10. Due to the good performance of gaas devices of high frequency, high electron mobility and low noise, the high frequency devices are mostly made of gaas materials now

    由於gaas器件優良的高頻、高電子遷移率、低噪聲性能，所以現在高頻器件一般都選用gaas材料。
  11. Based on gan hemt device physics and experiment results, we found electron mobility is depend on sheet density of 2deg and proposed a new gan hemt current collapse physical model

    基於ganhemt器件物理和實驗分析測試結果，發現電子遷移率與二維電子氣濃度有關，並提出了一種gan電流崩塌效應的新物理模型。
  12. It is a good candidate for the high quality photoelectronic and microelectronic devices, such as fiber optical communication lasers, photoelectronic detectors, high electron mobility transistors and electro - optic modulators

    它是制備性能優良的光電子與微電子器件，如光纖通訊激光器、光電探測器、高電子遷移率晶體管、電光調制器等的主要選擇對象之一。
  13. After this interview, i learned about electron mobility

    通過這次訪問，我了解到電子遷移。
  14. Electron mobility detector

    電子適移率檢測器
  15. Finally, the electron mobility in 6h - sic inversion layers is studied by single - particle monte carlo technique. the simulation results fit the experimental data very well

    對6h sic反型層遷移率進行的moniecaro模擬結果表明，庫侖中心的相關性，庫侖電荷量及電荷中心和sic侶。
  16. This model described relationship of current collapse and traps in buffer layer, and the normalized product of electron mobility and 2deg density with and without current collapses was 0. 95 vgs

    該模型描述了電流崩塌效應與緩沖層中陷阱的相互關系，並獲得了電流崩塌前後遷移率與二維電子氣濃度乘積的歸一化值0 . 95 vgs 。
  17. Although electrons do not move quite as easily in polysilicon as they do in the single - crystal kind, research has produced 3 - d transistors with 90 to 95 percent of the electron mobility seen in their 2 - d counterparts

    雖然電子在多晶矽中移動不如在單晶矽中那麼容易，但在這項研究做出來的三維電晶體里，電子的移動速率已達同類二維晶片的90 ~ 95 % 。
分享友人
分享到 Line

分享到臉書