electron number density 中文意思是什麼
electron number density
解釋
電子數密度-
The main simulation results were as follow : the average energy of electron decreases with the increasing pressure ; it decreases with the increasing methane concentration in the filling gas in the lower pressure range and increases in the higher pressure range ; the number density of fragment h and ch3 does not always increases with the gas pressure, but reaches an individual maximum ; energy carried by neutral dissociative fragment ch3 decreases with increasing gas pressure and ch4 concentration
主要結果如下：平均電子能量隨著反應室內氣壓的增加呈下降趨勢；在較低氣壓范圍內平均電子能量隨著反應源氣體中甲烷濃度的增加而減少；在較高氣壓范圍內平均電子能量則隨著甲烷濃度的增加而增加；隨著氣壓的增加碎片h和ch _ 3的數目並不是一直增加的，而是在不同的特定氣壓下出現各自的最值；碎片攜帶的能量基本隨甲烷濃度和氣壓的增加而減小。 -
Meanwhile by using numerical method, the beam ' s one - order current density, and the power exchange between the beam and the field are solved. curves are given to illustrate the relations among the above solved parameters and the gap ' s transit angle in different electron velocity and number density
然後通過數值求解得到了不同初始速度和電子數密度時徑向間隙中一階電流密度、高頻電場、電子束與本徵場的功率交換等隨間隙直流渡越角的變化規律。 -
With the film thickness, which was determined using transmission electron microscopy ( tem ), and the known material number density ( since the film is epitaxial on silicon, the number density is the same as in silicon crystals ), this determines the ge concentration
由通過隧道電鏡（ tem ）決定的膜厚和已知材料的密度（因為薄膜為硅上外延，密度與硅單晶相同） ，決定了鍺的濃度。 -
Then through the optimization of the code, we can get the dependence of free electron ' s lifetime and the number of recombination events on the density and depth of traps
通過對所得數據的分析，我們得到了光電子壽命以及復合事件的數量和速率對勢阱密度和深度的依賴關系。
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