electron recombination 中文意思是什麼

electron recombination 解釋
電子復合
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • recombination : 沖調；復水
  1. The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved

    導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率，從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 ）制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ，空穴阻擋材料balq3的摻入顯著影響了oled的光電性能，當balq3的摻雜濃度為25mol %時， oled的發光效率為1 . 0lm / w ，發光光譜的峰值為440nm ，色純度為（ 0 . 18 ， 0 . 15 ） ，未封裝器件的半衰期達到了950小時; 4 ）在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時，不僅改善了器件的發光亮度和色純度，而且提高了器件的發光效率和壽命。
  2. The total number of defects induced by electron irradiation in 4h - sic is calculated theoretically. the deep level defect of eh6 / eh7 is considered to play the most important role in carrier recombination from the comparison of all kinds of possible electron traps

    在輻照的位移效應方面：從理論上對電子輻照在4h - sic中引入的缺陷數量和各種缺陷能級進行了計算和分析，其中只有eh6 / eh7缺陷能級在sic中起著有效的復合中心的作用。
  3. On the other hand, the slow component of df is ascribed to the state qb - the next electron carrier of deoxidized side in ps ii. furthermore, we testified that the third component with lifetime much greater than the time of the registration period ( which is presented as a constant ), is corresponds to the recombination of p680 + and the backward transport electron from ps i

    延遲熒光的衰減動力學依賴于從q迴流的電子（ electron ）與氧化態的p680 ~ + ，其中快相延遲熒光成份源於q _ a ~ -上電子迴流與p680 ~ +的復合產生，慢相成份源於q _ b ~ =上電子的迴流與p680 ~ +的復合產生。
  4. Based on the theory of glow discharge, the angle distribution of electron and the recombination process are simulated by adopting monte carlo method. the doping process of n - type diamond film is investigated by this method for the first time. the results indicate : 1 ) the scattering angle of electrons near the substrate is mainly lange - angle, which is helpful to grow diamond film over a large area when glow discharge is kept ; 2 ) after considering the recombination process, the number of particles distribution is provided

    主要結果如下： （ 1 ）研究了電子在雪崩碰撞和分解電離后的角分佈情況，結果表明基片附近電子的散射以大角散射為主，在維持輝光放電的條件下，較高的偏壓和工作氣壓對金剛石的橫向連續成膜是有益的； （ 2 ）考慮了低溫合成金剛石薄膜過程中電子與各種碎片粒子的復合過程，給出了不同的復合系數情況下的粒子數分佈，結果顯示各種碎片粒子的分佈隨復合系數的變化會出現粒子數分佈的漲落現象。
  5. A deletion recombinant virus ( hasnpva132 ) of hal32 was generated by homologous recombination in e. coli. electron microscope pictures revealed the deletion virus could replicate in hzaml cells, which indicates hal32 is not essential for the replication of hasnpv

    通過在大腸桿菌內同源重組構建得到orf132的缺失重組病毒（ hasnpv凸132 ） ，轉染成功后的電鏡切片表明， hasnpv凸132能夠在hzami細胞內正常復制、增殖。
  6. Then through the optimization of the code, we can get the dependence of free electron ' s lifetime and the number of recombination events on the density and depth of traps

    通過對所得數據的分析，我們得到了光電子壽命以及復合事件的數量和速率對勢阱密度和深度的依賴關系。
  7. The initial activity of pt / tio2 was higher than that of tio2 because it restrained the recombination of electron and hole with supported pt, however the regenerated ability of the pt / tio2 was lower than that of tio2. after the regeneration, the activity could come back to some 60 % of the original activity and the reaction activity declined rapidly. the reason might be that after regeneration on the surface of pt / tio2 the incomplete oxidation of h2s to produce s was enhanced

    Pt tio _ 2催化劑的初活性比單一的tio _ 2催化劑的初活性高，這是因為擔載的貴金屬抑制了電子與空穴的復合，但其再生性能比tio _ 2差，再生后活性只能恢復到初活性的約60 ，且反應活性迅速降低，這可能由於在再生后的pt tio _ 2表面上， h _ 2s通過不完全氧化生成s ~ 0的反應增強所致。
  8. The photocatalytic action of layered nanocomposite semiconductor is based on the charge rapidly transferring from guest to guest or from guest to host layer to decrease electron - hole recombination, so as to improve photocatalytic activity. especially, this material can be recycled easily, and has potential applications in the area of environmental engineering

    層狀光催化納米復合材料是當前光催化材料科學研究領域中最活躍的研究方向之一，它是基於層狀化合物層間區域的納米空間結構，將半導體和貴金屬等客體引入其層間區域形成納米粒子，從而制得光催化納米復合材料。
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