electron trap 中文意思是什麼
electron trap
解釋
電子捕集器-
The study indicate that sral2o4 : tb3 + phosphor can be composed from 1250c to 1550c, the phosphor ' s luminance reduce and the afterglow time shorten along with the compounding temperature ; the better luminance and afterglow with the better crystalloid degree ; the luminescence of tb3 + ion in the sral2o4 is coming from the transition of 5d4 - 7fj ( j = 6, 5, . . . 0 ) ; the afterglow is because of the electron that seized in the trap released which integrate with the luminescence center
合成發光體亮度隨合成溫度的降低而逐漸降低，余輝時間逐漸縮短；當合成物具有較好的結晶度時，合成的發光粉不僅發光亮度高而且余輝時間長； tb ~ （ 3 + ）離子在sral _ 2o _ 4基質晶格中的發光主要來自於~ 5d _ 4 ~ 7f _ j （ j = 6 ， 5 ， … … 0 ）的躍遷；其餘輝是因為不斷有被陷阱所俘獲的電子釋放出來與發光中心復合。 -
A new model for the growth stage of surface flashover has been developed according to the experimental results, which is based on the solid band theory. it is suggested that the electron multiplication could be attributed to two processes : one is the secondary electron emission avalanche caused by collisional ionization, the other is the micro - discharge caused by the trap centers of insulator. the trap cente
電子倍增的過程與材料的表面態直接相關，材料微觀結構的變化和材料的表面處理都能夠導致材料表面態的變化，引起材料的表面二次電子發射系數以及材料中陷階密度和分佈的改變，從而影響了電子倍增的過程，並進一步改變或影響了沿面閃絡的發展過程。 -
To analysis the principle of degradation and destruction, a reasonable relationship between the electrostatic potential and 1 - v characteristic parameters is raised ; a computation model for electron trap effect is originally proposed, which leads to a conception of critical trap electron density
本文首次建立了晶界勢壘高度與伏安特性參數之間的關系，提出了陷阱效應在沖擊老化過程的作用模型，引入了「臨界陷阱電荷密度」的概念。 -
The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping
首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。 -
On this condition, based on the experimental results gotten by the microwave absorption dielectric - spectrum measure technique, the photographic process at room temperature in agcl cubic microcrystals doped with k4fe ( cn ) 6 is simulated. through the optimization of simulating parameters, not only the cross - section and trap depth of the shallow electron trap induced by the dopant, but also the optimal doping amount is obtained
在此基礎上，以微波吸收介電譜檢測技術的實驗結果為依據，對摻有k _ 4fe （ cn ） _ 6的agcl立方體微晶在室溫下的曝光過程進行了模擬，通過調節模擬參數，不但計算出由摻雜劑引入的淺電子陷阱的俘獲截面和陷阱深度，而且得到了這種摻雜乳劑的最佳摻雜濃度。 -
It has two following important properties : one is optical storage, that is, optical signals can be stored in trap electron form for long time, the other is infrared up - conversion, that is, it can convert infrared to visible light at room temperature
其具有以下兩個重要特性： 1 ）光存儲：能將光信號以陷阱電子形勢長期穩定存儲； 2 ）紅外上轉換：室溫下可將紅外光轉換為可見光。
分享友人