epitaxial silicon 中文意思是什麼
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Luminescent properties of c implanted epitaxial silicon
外延硅的光致發光特性 -
N - channel silicon planar epitaxial jfet
通道硅平面型外延接面型場效晶體管 -
Testing of materials for semiconductor technology - determination of defect types and defect densities of silicon epitaxial layers
半導體工藝材料的檢驗.硅晶體外延層缺陷種類和缺陷密 -
Specification for silicon epitaxial wafer for microwave power transistor
微波功率晶體管用硅外延片規范 -
Test method for resistivity of silicon epitaxial layers by area contacts three - probe techniques
硅外延層電阻率的面接觸三探針.測試方法 -
Testing of semi - conductive inorganic materials ; measuring the thickness of silicon epitaxial layer thickness by infrared interference method
半導體無機材料的試驗.用紅外線干涉法測量硅外延生長 -
Because of the limitation of thin silicon film epitaxial technology, it is difficult to grow thin silicon film epitaxial of thickness less than 2 m for a long time, which makes the series resistance large
但長期以來，由於薄硅外延生長技術的限制，無法生長出優質的厚度小於2 m的薄硅外延層，使硅肖特基二極體的串聯電阻無法降的更低，限制了其截止頻率的提高。 -
Up to present we have prepared the epitaxial simox substrate ( i layer 0. 37um, silicon layer 2. 8um ), and done the circuit design, process integration, device simulation and some layout design )
本項目目前已完成了simox外延襯底的制備（ i層0 . 37um ，外延硅層2 . 8um ） ，以及功率開關集成電路的電路設計，工藝設計和部分版圖設計。 -
Devices made with strained epitaxial films of this material can be much faster than devices that exclusively use silicon
近年來鍺硅合金在高速器件和光電子應用中有大量的可能使用研究。 -
With the film thickness, which was determined using transmission electron microscopy ( tem ), and the known material number density ( since the film is epitaxial on silicon, the number density is the same as in silicon crystals ), this determines the ge concentration
由通過隧道電鏡（ tem ）決定的膜厚和已知材料的密度（因為薄膜為硅上外延，密度與硅單晶相同） ，決定了鍺的濃度。 -
Detail specification for low power silicon n - p - n switching transistors - 65 v, planar epitaxial, ambient rated, hermetic encapsulation - full plus additional assessment level
小功率硅p - n - p型開關晶體管詳細規范. 65v平面外延額定環境條件密封封裝.全面附加評定級 -
After optimizing the epitaixal condition, low temperature bonding, splitting and removing of porous silicon, soi material has been successfully fabricated for the first time in china with the epitaxial layer transfer of porous silicon ( eltran ) the eltran - soi has been characterized and the results indicate that the top si layer is perfect single crystal, and its thickness is uniform
優化了外延條件，結合低溫鍵合與多孔硅的剝離技術，在國內首次用多孔硅外延層轉移技術成功地制備出了soi材料。分析表明， eltran - soi的頂層硅厚度均勻，單晶質量優良；界面清晰、陡直；電學特性優異。 -
According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon
Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。 -
In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy
本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。 -
Many factors which affect the epitaxy qualities, especially the porosity of porous silicon and growth temperature, have been studied in detail. it is found that the pre - oxidation of porous silicon can efficiently prevent the boron diffusion during epitaxy. the defaults along { 111 } are the main defects in epitaxial silicon layer
深入研究了影響外延的各種因素，特別是多孔硅的孔隙率和外延溫度對外延層質量的影響，發現多孔硅的預氧化可以有效地阻止外延時b的擴散，外延層中主要的缺陷是沿著{ 111 }面生長的層錯。 -
. detail specification for low power silicon n - p - n switching transistors - 20 v, planar epitaxial, ambient rated, hermetic encapsulation long lead version - full plus additional assessment level
小功率硅n - p - n型開關晶體管詳細規范. 20v平面外延額定環境條件密封封裝 -
. detail specification for low power silicon p - n - p switching transistors - 65 v, planar epitaxial, ambient rated, hermetic encapsulation long lead version - full plus additional assessment level
小功率硅p - n - p型開關晶體管詳細規范. 65v平面外延額定環境條件密封封裝 -
Detail specification for low power silicon p - n - p switching transistors - 65 v, planar epitaxial, ambient rated, hermetic encapsulation - full plus additional assessment level
小功率硅p - n - p型開關晶體管詳細規范. 65v平面外延額定環境條件密封封裝全面附加評定級 -
Detail specification for low power silicon p - n - p switching transistors - 25 v, planar epitaxial, ambient rated, hermetic encapsulation - full plus additional assessment level
小功率硅p - n - p型開關晶體管詳細規范. 25v平面外延額定環境條件密封封裝全面附加評定級 -
Detail specification for low power silicon n - p - n switching transistors - 20 v, planar epitaxial, ambient rated, hermetic encapsulation - full plus additional assessment level
小功率硅n - p - n型開關晶體管詳細規范. 20v平面外延額定環境條件密封封裝.全面附加評定級
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