exciton binding energy 中文意思是什麼

exciton binding energy 解釋
激子的結合能
  • exciton : n. 【物理學】激子。adj. -ic ,-ics n. 〈用作單數〉【物理學】激子學。
  • binding : adj 1 縛[捆、綁]…的；黏合的；系連的，連結的。2 有束縛力的，有拘束力的，附有義務的。3 〈口語〉引起...
  • energy : n. 1. 干勁，活力。2. （語言、行為等的）生動。3. 〈pl. 〉 （個人的）精力；能力。4. 【物理學】能，能量。
  1. Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in - nitrides quantum dots

    族氮化物量子點中類氫施主雜質位置對束縛激子結合能的影響
  2. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  3. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  4. In low - dimension structure, the exciton binding energy will be lager than bulk material because of quantum effects, so excitons play an important role in optical characteristics of low - dimension zno

    在低維結構中，由於量子限制效應，激子束縛能會變得更大，因而在低維zno材料中，激子發光在其光學特性中起著舉足輕重的作用。
  5. Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices

    由於氧化鋅具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，因而被認為是製作紫外半導體激光器的合適材料。
  6. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
  7. This direct band - gap material has a large exciton binding energy ( 60mev ), which permits excitonic recombination even at room temperature. thus zno is attracting much attention as promising candidates for optoelectric applications in visible and ultraviolet regions

    它有較高的激子束縛能（常溫下為60mev ） ，使得其在室溫下可以發射紫外激光，因此作為新一代的半導體發光材料受到廣泛關注。
  8. We obtained a high quality zno thin film with the pl fwhm of 94 mev at 900. the free exciton binding energy deduced from the temperature - dependent pl spectra is about 59 mev at 900, suggesting that the film quality can be improved by annealing process

    當退火溫度為900時獲得了高質量的氧化鋅薄膜，光致發光譜的半高寬為94mev ，通過變溫實驗得到激子束縛能為59mev ，表明退火過程提高了薄膜的質量。
  9. It has high exciton binding energy of 60 mev, which ensures efficient uv emission from the exciton and make it suitable for uv laser - emitting devices. since the first observation of the stimulated ultraviolet emission at room temperature, zno has become another hotspot in the region of uv light emitting researching

    Zno不僅是繼gan之後紫外發射材料研究的又一研究熱點，而且近年來zno薄膜作為ito薄膜的很有發展前景的替代材料，正引起人們日益廣泛的關注。
  10. Zno film is a novel - direct compound semiconductor with wide band gap energy of 3. 37ev and a exciton binding energy 60mev at room temperature. due to its the prerequisite for visible or ultraviolet light emission at room temperature, it has the tremendous potential applications for ultraviolet detectors, leds, lds. zno thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance

    室溫下禁帶寬度為3 . 37ev ，激子束縛能為60mev ，具備了室溫下發射紫外光的必要條件，在紫外探測器、 led 、 ld等領域有著巨大的發展潛力； zno薄膜以其優良的壓電性能、透明導電性能等使其在太陽能電池、壓電器件、表面聲波器件、氣敏元件等諸多領域得到廣泛應用。
  11. In 1990s, a calculation of the ground - state energy of an exciton confined in a cylindrical quantum wire in the presence of a uniform magnetic field is reported as a function of wire radius, using a variational approach by gang li, spiros v. branis and k. k. bajaj. a. balandin and s. bandyopadhya present variational calculations of the ground - state exciton binding energy and exciton radius in a quantum wire subjected to an external magnetic field. these studies have been primarily responsible for our current understanding of the nature of excitonic states in a quantum wire subjected to an external magnetic field

    九十年代中期，人們就開始了關于在外加磁場時量子線中激子特性的研究， gangli ， spirosv . branis和k . k . bajaj利用變分法，對于圓柱形的量子線中激子的基態束縛能進行了計算，發現對於一個給定的磁場值，激子的基態束縛能比不加磁場時變大。
  12. Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices. since the first observation of the stimulated ultraviolet emission at room temperature, zno has become another hotspot in the region of uv light emitting researching

    氧化鋅在室溫條件下具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，是製作紫外光電子器件的合適材料，自1997年首次發現zno室溫紫外受激發射以來， zno研究已成為繼gan之後紫外發射材料研究的又一研究熱點。
  13. Low dimensional ii - vi semiconductor structure is one of ideal material for exciton nonlinear optical devices at room - temperature and greem - blue emission devices due to it ' s large exciton binding energy and strong room - temperature exciton effect. thus the excitonic effects in ii - vi semiconductor quantum wells and asymmetric double quantum wells have been studied deeply and widely

    特別是-族半導體低維結構由於較大的激子束縛能和強的室溫激子效應，使它有希望成為制備室溫激子非線性器件和藍綠光器件的理想候選材料之一，為此-族半導體量子阱和非對稱雙量子阱的激子效應已被很深入地研究。
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