ferroelectric film 中文意思是什麼

ferroelectric film 解釋
鐵電薄膜
  • ferroelectric : n. ,adj. 【物理學】鐵電體（的）；強介質（的）。
  • film : n 1 薄層，薄膜；薄霧，輕煙；細絲狀的東西。2 【攝影】感光乳劑，照相軟片，電影膠片；影片。3 〈 pl ...
  1. A coplanar waveguide tunable bandpass filter using ferroelectric thin film

    基於共面波導傳輸線的鐵電薄膜可調帶通濾波器
  2. The study of the properties of double - layer ferroelectric film

    雙層鐵電薄膜的性質研究
  3. 0xl0 - 2 c / cm2k respectively. and the sbn thin film can avoid plumbum pollution of pzt ferroelectric material

    而且， sbn在制備過程中能夠避免pzt等鐵電材料的鉛污染的問題。
  4. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  5. Within the framework of the tim ( transverse field model ), using the eft ( effective field theory ) and the mft ( mean field theory ), considering the long - range effects and the interfacial effect, we studied the transition properties of the ferroelectric thin film, pyroelectric coefficient and dielectric susceptibility and triple hysteresis loop of the ferroelectric bilayer structure theoretically

    我們應用平均場、有效場等方法，在橫場伊辛模型框架內，考慮贗自旋間長程相互作用和界面效應，對鐵電薄膜、雙層薄膜的相變、熱釋電、介電，以及電滯回線等性質進行了較深入的研究。
  6. Based on sndm technique, a method of local capacitance - voltage characteristic characterization of ferroelectric thin films was proposed. the effect of traps at oxide - semiconductor interface on metal - oxide - semiconductor structure capacitance - voltage curve was discussed, and the influence of coercive field to the capacitance - voltage characteristics of ferroelectric thin films was also discussed. the dynamic switching of ferroelectric domain in ca doping ( pb, la ) tio3 thin film was studied by sndm from the view of electricity

    利用sndm ，從純電學的角度觀察了plct薄膜中的電疇動態反轉過程，由電疇橫向擴張的移動速度的降低，發現了晶界在電疇反轉過程中對疇壁移動的阻擋作用;根據sndm和pfm的在垂直方向上的不同信息敏感深度，得到plct薄膜中電疇反轉過程中電疇是楔形疇;用pfm觀察同一電疇在去掉外加反轉電場后電疇的極化弛豫現象，結果表明空間電荷是發生極化弛豫的主要原因。
  7. In the framework of the transverse ising model ( tim ), landau phase transition theory and the electrostatic field theory, we study the physical properties of the ferroelectric thin film, bilayer, sandwich structure, multilayer with a non - polarization slab and a two - dimension polar lattice model with polar defects. the main work and results are as follows : first, the long - range interaction in ferroelectric material is sometimes neglected in the previous studies. we introduce the long - range interaction in the framework of the tim and the landau theory

    本文在橫場伊辛模型、朗道相變理論以及靜電場等理論的框架內，對鐵電薄膜、鐵電雙層膜、鐵電三明治結構以及含有雜質層的鐵電多層膜和含有偶極缺陷的二維偶極點陣系統等多層鐵電系統的相變、熱電、介電、電滯行為等物理性質進行了深入研究。
  8. To achieve accurate detection of surface potential, the measurement of the contact potential difference of the zno / si step was also carried out. polarization - related surface properties of ferroelectric thin films were investigated by kelvin probe force microscopy ( kpfm ), leading to the discovery of asymmetric charge writing on the surface of pb ( zr _ ( 0. 55 ) ti _ ( 0. 45 ) ) o _ 3 ( pzt ) thin film

    為了優化儀器的檢測靈敏度和穩定性，選用氧化鋅薄膜上的zno / si臺階作為測試對象，檢測了zno / si的接觸電勢差;通過改變儀器系統參數，發現針尖-樣品距離和掃描速度對接觸電勢差的檢測結果影響顯著。
  9. R amp; d of preferred oriented ferroelectric thin film prepared by sol - gel method

    凝膠法制備晶粒擇優取向鐵電薄膜的研究
  10. The surface morphologies of thin films were observed by using scan electron microscope ( sem ) and atomic force microscope ( afm ). based on grazing incidence x - ray diffraction ( gixrd ) equipment, we find that residual stress exist in magnetron sputtering plct film, in addition, the ferroelectric properties of plct thin films were measured by radiant premier lc type multifunctional ferroelectric properties test system

    利用廣角x射線衍射技術對不同濺射工藝下plct薄膜的相結構進行了研究;採用掃描電子顯微鏡（ sem ）和原子力顯微鏡（ afm ）分別觀察了薄膜的表面形貌;利用掠入射x射線衍射（ gixrd ）測量了薄膜的殘余應力。
  11. A method beyond mean - field theory is applied to investigate the effects of the long - range interaction on the physical properties of the ferroelectric thin film

    在這篇論文里，我們在橫場伊辛模型和朗道唯象理論的框架內引入長程相互作用。
  12. According to this, the research of the fatigue properties of the ferroelectric films was proposed. the lead zirconate titanate ( pzt ) film was prepared by a metal - organic decomposition method. the films " physical properties were analysed by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ) and hysteresis loops

    然後採用金屬有機物熱分解法制備出作為研究對象的鋯鈦酸鉛pb （ zr ， ti ） o _ 3 （ pzt ）薄膜，用x射線衍射儀、掃描電鏡和rt6000s鐵電測試儀測量表徵鐵電薄膜。
  13. Ferroelectric films appeared several decades ago and the technology of ferroelectric film appeared in the seventies of twenty century. with the development of film forming technology, this new kind of function material is extensively applied in many fields such as electric technology, laser technology, infrared detection technology and other aspects of engineering technology

    鐵電材料在二十世紀二十年代就已問世，鐵電薄膜技術始於二十世紀七十年代，隨著成膜技術的發展，這種新穎的功能材料已廣泛應用於電子技術、激光技術、紅外探測技術以及其它工程技術方面。
  14. Analysis of domain reversal characteristics of plzt ferroelectric thin film

    鐵電薄膜反轉特性分析
  15. The la - modified thin films with 220nm thickness exhibited diffuse phase transition through the testing of temperature dependence of dielectric permittivity. the abnormal dielectric phenomenon was explained according to the observed relaxor behavior. the influence of post - annealing on the properties of the ferroelectric thin - film capacitors is another component of this thesis

    在薄膜的介電性質方面，通過對介電溫譜的測試，發現對于厚度薄至220nm的薄膜，摻鑭后同樣會導致馳豫型的鐵電相變，並依此解釋了介電常數的「反常」現象。
  16. The bzt thin film has good properties in high frequency. the essential principle, technology process and advantages of the ba ( zr0. 3ti0. 7 ) o3 ( bzt ) ferroelectric thin films grown on pt / ti / sio2 / si substrates and quartz substrates by sol - gel process are introduced. the heat - treatment technology was fixed according to the dsc - tg measurement, afm ( atomic force microscope ) and fe - sem ( field emission - scanning electrical microscope )

    我們通過在pt / ti / sio2 / si襯底和石英襯底上制備ba （ zr0 . 3ti0 . 7 ） o3鐵電薄膜，了解了溶膠-凝膠法（ sol - gel ）制備薄膜的基本原理、工藝過程及工藝特點;並對所制得的ba （ zr0 . 3ti0 . 7 ） o3薄膜的前驅體溶液和干凝膠進行了差熱與熱失重（ dsc - tg ）分析，確定了溶膠在熱處理各個階段的反應情況。
  17. And it is important and valuable for application to systematically study the preparation of lsco thin film electrodes and the integration of ferroelectric thin films on the lsco electrodes

    因此， lsco薄膜電極的制備和相應的鐵電薄膜集成化研究具有重要的應用價值。
  18. This thesis reviewed the development of the microwave tunable ferroelectric thin film materials, summarized the application of sol - gel on the materials, and introduced the principle and application of the microwave tunability in brief

    本文全面綜述了微波可調鐵電薄膜材料的研究發展，總結了溶膠凝膠技術在制備此類材料中的應用，簡要介紹了鐵電材料微波可調的基本原理及其應用。
  19. Lead lanthanum titanate ( plt ) ferroelectric thin film has superior pyroelectric, ferroelectric, piezoelectric and photoelectric characteristics, and it has been wildly used for various electromic equipments, such as pyroelectric ir detectors, dynamic random access memories ( drams ) and electrooptic apparatus

    採用射頻磁控濺射法，分別通過快速退火和傳統退火工藝，在5英寸的pt / ti / sio2 / si基片上制得具有不同微結構與性能的plt薄膜。
  20. With the development of microelectronic technology and high degree integration, people need ferroelectric films with more excellent properties. therefore, the preparation and the properties study on the ferroelectric film have become research subjects that have highly been paid attention to in the world

    隨著微電子技術和器件高度集成化的發展，人們對薄膜材料性能的要求越來越高，因此鐵電薄膜材料的制備和性能研究成為目前國際上高度關注的研究課題。
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