forbidden gap 中文意思是什麼
forbidden gap
解釋
禁隙-
With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature
含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。 -
Abstract : we have studied the spontaneous emission from a three - level atom with an external - driving field in a photonic crystal. as a result of quantum interference and photon localization, the population in the two upper levels displays quasi - oscillatory oroscillatory behavior. this depends on the initial atomic state and the relative positions of the two upper levels from the forbidden gap. the intensity and the phase of the external field can affect spontaneous emission from the atom. the properties are different from a three - level atom either in vacuum or in aphotonic crystal without an external driving field
文摘:討論了在雙光子驅動場作用下，三能級原子在光子晶體中的自發發射問題.由於量子干涉和光的局域化作用，兩個上能級中的占據數將具有周期振蕩或準周期振蕩的性質，這不僅依賴于兩個上能級與禁帶的相對位置，同時也依賴于原子的初始狀態，而且還與驅動場的強度、驅動場的入射位相有關.這些性質既與真空中帶有驅動場的原子的自發發射性質不同，也有別于無驅動場作用下光子晶體中三能級原子的自發發射性質 -
Such control can be realized in case where a atom interact with photonic band gap matericals when the atom is placed in photonic crystals whose density of modes is dramatically different from that of free space vacuum. it was known that control could be achieved by varying the frequency ( which leads to the changes of the relative position of the upper levels from the forbidden gap ) or by varying the photonic density of modes ( dos ) or by varying the intial atomic state
由於光子晶體具有不同於真空中的光子態密度，原子和光子帶隙材料便發生相互作用，這樣便可以控制原子的自發輻射。改變原子上能級與光子禁帶邊緣的相對位置、材料中的光子態密度或原子初態都可以控制原子的自發輻射。 -
C60, a new type of semiconductor material, has many superior properties, such as wide forbidden band, direct band gap, rapid responding time, high optical damage threshold value and wide responding frequency band etc. these capabilities indicate that c60 film will be used widely in computer, integrate optical instrument and storage device etc. however, the preparation and the purification of c60 material affect the large - scale application at all times
C _ （ 60 ）薄膜作為新的半導體材料具備許多優越特性，如禁帶寬度大、直接帶隙、快速響應時間、高的光學損傷閥值、較寬的響應頻帶等，這些性能預示了c _ （ 60 ）薄膜在計算機、集成光學器件、光存儲器等方面具有廣闊的應用前景，但c _ （ 60 ）材料的制備與提純還一直是阻礙該新材料投入大規模實際應用的主要因素。 -
In addition to the strong gap - like lo1 mode and weak forbidden to1 mode, the second order raman scattering of the brillouin zone - edge phonon ( 2lo1 ( l ) mode and 2to1 ( x ) mode ) as well as the scattering of the brillouin zone - center phonon were observed. also, the nitrogen local mode ( 495 cm - 1 ) associated with the nn center and the so - called " x " mode ( 387 cm - 1 ) of the lo phonon ( manifest
在一級喇曼散射譜中，得到了gap的lo （ p ）聲子峰和強度較弱的禁戒的to （ p ）模，還觀測到了在495cm - ，處的n的局域模和在387cm一，處的由n導致的lo （ n ）聲子模。 -
With the introduction of the dopants, the effective mass of carriers was changed and the seebeck coefficient was increased. at the mean time, the dopants reduced the forbidden energy gap, which changed the carrier concentration and thus increased electrical conductivity. by calculating the forbidden energy gap and electrical conductivity of mg2si specimen doped with different amount sb, the mechanism of transference changed abruptly at 625k
在mg _ 2si熱電材料基體中摻雜te 、 sb元素后，在結構中引入了缺陷，增大了體武漢理工大學博士學位論文系中載流子有效質量，提高了seebeck系數;降低了體系導電活化能，提高了電導率，同時也降低了熱導率。 -
Periodic dielectric structure. they can create a range of forbidden frequencies called photonic bandgap. photons with energy lying in the gap cannot propagate through the medium
它是介質顆粒周期排列而成的人工材料，能夠產生光子帶隙，頻率落在帶隙內的光在晶體里沿任何方向都不能傳播。
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