gaas laser 中文意思是什麼
gaas laser
解釋
砷化鎵激光器-
At present, this kind of gaas photoconductor detector has had practical value. it can detect x - ray, gamma - ray, laser pulse successfully
目前，我們研製的gaas探測器已具有一定的實用價值，可用在室溫下對x射線、射線、激光脈沖進行探測。 -
For example, when the gaas substrate is etched by h2so4 - h2o2, h2o2 is adopted to oxidate the substrate first, then the substrate was etched by means of laser wet etching in h2so4 solvent. theoretical analysis and experimental results show that compared with the mixed - solvent - etching, more smooth etched surface can be obtained by this method ; and because the substrate is preprocessed, time of laser induced wet - chemical etching
理論分析和實驗結果都表明，次序選擇腐蝕法可以有效地提高腐蝕表面的均勻性;因先對基片進行化學腐蝕處理，大大縮短了激光化學腐蝕的時間;使溶劑先後分別作用於基片，可以提高激光化學腐蝕溶劑配比的精度容差，使激光化學腐蝕控制和分析更加簡單。 -
The purpose of this thesis is to develop the laser assisted wet chemical etching on the gaas substrate. the main contents and contributions include : 1 ) laser - assisted wet mask - etching method and poles - etching method have been proposed laser - assisted wet mask - etching method is that the area which need not etched is covered by mask film, and the uncovered area is processed by laser induced wet etching
本文的工作就是圍繞半導體gaas基片的激光化學誘導液相腐蝕技術開展的，主要的研究結果和創新之處如下: 1 ）提出了激光誘導液相抗蝕膜掩蔽法和電極腐蝕法抗蝕膜掩蔽法是指在基片表面不需要腐蝕的區域用抗蝕膜覆蓋，激光照射在無抗蝕膜區域，對基片進行腐蝕。 -
Gaas injection laser
砷化鎵注入式激光器 -
The improvement in the basic gaas laser performance, however, could not be brought about by an evolutionary development process.
但是GaAs激光器基本性能的改進不能依靠這種漸進的發展過程。 -
Based on the theory mode, the delay time between the beginning of optical illumination and the onset of lock - on switching was calculated, and the transiting speed of electrons, the traversing velocity of the current filament, was obtained as well. the calculated results matched well the experimental results. taking advantage of the ultra - fast response characteristics of the devices, si - gaas pcss ' s are successfully applied to the broadening test of nanosecond laser pulses
應用單極電荷疇模型數值計算了lock - on效應的光、電時間延遲和載流子的渡西安理工大學碩士學位論文越速度（絲狀電流穿越開關間隙的速度） ，所得計算結果與實驗測試結果基本吻a利川半絕緣gaas光屯導開關的超快光l匕11向應燈性，成功地應川下納秒激光脈沖展寬試驗中，證明了開關可廠泛應川在超快光電響應和光電反饋網路中。 -
Study of passive q - switched unit of ndyag laser using ion - implanted gaas
離子注入sigaas做激光器被動調q元件的研究 -
In this dissertation, a boa - type waveguide optic switch with double - heterostructure gaas / gaalas has been researched. gaas - based integrated optical devices have good temperature, good anti - radiation and optical - transmission characteristics, and also have wide transparent range of wavelength. they can also be integrated on a chip with optical active devices and electronic devices, such as semiconductor laser, optical modulation, optical amplifier, pin, and so on
基於gaas材料的集成光學器件不僅具有良好的光傳輸特性、溫度特性、抗輻射能力和其較寬的透明波長范圍，還有望進一步實現晶元與光源、光調制器、光探測器和半導體光放大器等其它光電器件以及集成電路的單片集成；採用gaas gaalas雙異質結材料製作的光開關可以得到較低的開關電壓，而且採用gaas gaalas異質結材料的光傳輸損耗很小。 -
Gaas laser diode
砷化鎵激光二極體 -
The improvement in the basic gaas laser performance, however, could not be brought about by an evolutionary development process
但是gaas激光器基本性能的改進不能依靠這種漸進的發展過程。 -
For our laboratory is changing toward industrialization, a lot of work on conventional ingaas / gaas / algaas quantum well laser has been done. how the parameters, such as threshold current density, slope efficiency, fwhm and spectrum width, are influenced and how much the influence is, are discussed by the numbers. the effective means how to improve a certain performance parameter are purposed too
由於本實驗室正處于由試驗研究向產業化邁進的階段，針對常規ingaas / gaas / algaas量子阱激光器做了很多工作，文中系統論述了常規量子阱激光器的各項性能參數?閾值電流密度、斜率效率、遠場發散角、光譜線寬等的影響因素及改進的有效辦法，並針對激光器p ? i線性度不好、遠場發散角出現多瓣的現象，通過理論分析找出原因所在並進行了改進，有效解決了以上問題。
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