gap coefficient 中文意思是什麼

gap coefficient 解釋
隙縫系數
  • gap : n 1 （墻壁、籬笆等的）裂口，裂縫；豁口，缺口。 【軍事】突破口。2 （意見的）齟齬，分歧；隔閡，距離...
  • coefficient : adj. 共同作用的。n. 1. 共同作用；協同因素。2. 【數，物】系數，率；程度。
  1. The heat expansion coefficient of plastic is much higher than metal caused by abrasion heat and the change of environment condition. plastic gear needs enough gap

    因磨擦熱和環境條件的變化，塑料比金屬熱膨脹系數高許多，塑料輪需要足夠的
  2. The heat expansion coefficient of casting nylon materials is about 10 times larger than steel, so the internal dia shrinks caused by the expansion. it will influence the connection gap of the abrasive surface

    鑄型尼材料的熱膨脹系數約比鋼材大10倍左右，所以軸套在運行時由於摩擦熱所造成的膨脹變形使內徑縮小，影響摩擦面的配合間隙。
  3. Due to good chemical stability and electrical resistivity, high thermal conductivity and mechanical intensity, wide band gap and low thermal expansion coefficient, aln thin films can be applied for insulating chips for semiconductor devices with high power, thermal dissipation lagers for large and super - large scale integrated circuits, insulating layers or passivation layers for semiconductor

    超薄鋁膜由於其特殊的的光學性質，在光學多層膜上有廣泛應用。氮化鋁薄膜化學穩定性高、熱傳導率高、機械強度高、電絕緣性能佳、高能隙、熱膨脹系數低，光學特性優良，可以用作大功率的紫外光學器件的散熱材料。
  4. Either the boron nitride ( bn ) thin films with different cubic phase content were deposited on n - type si ( 111 ) and fused silica substrates by radio frequency ( rf ) sputtering using two - stage deposition process. the films were characterized by fourier transform infrared ( ftir ) spectroscopy. the transmittance te ( ) and reflectance re ( ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by alpha - step. the absorption coefficient was calculated from te ( ) and re ( ). the optical band gap ( eg ) of the films was determined by effective medium form of formula containing eg

    本文還研究了立方相含量與光學帶隙的關系，在n型si （ 111 ）片和熔融石英片上沉積出不同體積分數的立方氮化硼薄膜，薄膜的成分由傅立葉紅外吸收譜標識；用紫外-可見分光光度計測量了沉積在石英片上的bn薄膜的透射光譜te （ ）和反射光譜re （ ） ，薄膜的厚度用臺階儀測得。
  5. According to negative temperature coefficient of vbe and positive temperature coefficient of vt, a framework of band - gap voltage reference is investigated. the reference offer a source of pir, distributed three voltage, one as upper - threshold voltage of dual - threshold comparator, the other as lower - threshold voltage of comparator, the other as direct current voltage for second band - pass filter amplifier

    同時利用pnp晶體管發射結電壓的負溫度特性和發射結差值電壓的正溫度特性設計了一個帶隙基準電壓源。此帶隙基準電壓源本身作為熱釋電紅外傳感器的電源電壓，同時分壓提供雙限電壓比較器的上限電平和下限電平以及第二級帶通濾波放大器的直流電平。
  6. Considering the effects of saturation, pole shape, some important coefficients including the effective pole - arc coefficient, the leakage coefficient, the air - gap coefficient are analyzed by electromagnetic method, and a series of useful curves are given

    考慮磁路飽和、磁極形狀等因素的影響，利用電磁場數值解法對電磁計算中的有關系數，包括漏磁系數、計算極弧系數、氣隙系數等進行了分析研究，給出了工程實用的曲線。
  7. School areas are too large and the schoolyards and green spaces are too small ; classroom construction is not up to national standards ; and classrooms contain too many students. furthermore, the school desks and chairs often are not compatible ; and books, instruments and sports equipment are far from enough. there is a gap between software and hardware in the configuration of audio - visual aids ; and the coefficient of the utilization of existing equipment is low and ineffective

    通過研究發現，西峰市普通完全中學目前存在著布點不合理，學校規模過大，校園及綠化面積偏小，教室建築規范性差，室內學生容納過量，課桌椅不配套，圖書、儀器、體育器材嚴重不足，電化教學設備軟硬體配置比例失調，現有教學設備利用率低、效益差，學校管理者教學設施建設中作風浮夸等問題。
  8. Diamond is a remarkable material due to its special crystal structure, which shows high hardness, low friction coefficient, high thermal conductivity, high optical transparency, low permittivity and high band gap etc. cvd diamond films are widely used in mechanical coating, heat sinks, optical window, semiconductor devices and other application fields because of its low price and high performance

    金剛石的特殊晶體結構使其成為一種性能優異的功能材料，它具有高硬度、低摩擦系數、高熱導率、高透光率、低介電系數和高禁帶寬度等性質。化學氣相沉積制備金剛石膜成本低、質量高，廣泛應用於工具塗層、熱沉、光學窗口、半導體器件等方面。
  9. Sns has an energy gap of eg 1. 3ev, which is very close to the optimum energy gap 1. 5ev of solar cells, and it has a high absorption coefficient ( > 104cm - 1 ) and a high conversion efficiency of about 25 %. in addition, elements sn and s are abundant and non - toxic in nature

    硫化亞錫（ sns ）的禁帶寬度eg 1 . 3ev ，接近太陽能電池的最佳禁帶寬度1 . 5ev ，在理論上其能量轉換效率達到25 % ;其吸收系數? 104cm - 1 ，用作太陽能電池耗材少;其組成元素s和sn在地球上儲量豐富、廉價、無毒，有很好的環境兼容性。
  10. Moreover, it was found that the microstructure and physical properties of dlc film were affected to some extent by the distance between target and substrate. when the distance between target and substrate increases, sp 3c content in the deposited dlc film decreases. accordingly, the value of surface roughness, microhardness, friction coefficient, residual stress and band gap became lower in the same way

    此外，靶基距對dlc薄膜的結構和性能也有一定的影響，隨著靶基距增加， dlc薄膜中的sp ~ 3c含量減少， dlc薄膜的表面粗糙度降低，顯微硬度降低，摩擦系數減小，殘余應力減小，光學帶隙eg減小。
  11. It is found that the microstructure and properties of as - deposited dlc films is seriously dependent on the substrate temperature used in deposition processes. with the increase of substrate temperature, sp 3c content in the deposited dlc film decreases, surface roughness and friction coefficient of deposited dlc films increase. at the same time, microhardness, residual stress and optical band gap became lower

    研究發現，基片溫度對dlc薄膜的結構和性能影響最明顯，隨著薄膜沉積過程中基片溫度的增加， dlc薄膜中的sp ~ 3c含量減少， dlc薄膜的表面粗糙度增加， dlc薄膜的顯微硬度降低， dlc薄膜的摩擦系數增大， dlc薄膜的殘余應力都是減小的，光學帶隙eg變窄。
  12. Fes _ 2 ( pyrite ) has been considered as a valuable semiconductor for solar energy conversion and other photoelectrochemical applications since it consists of nontoxic and abundant elements. because of the band gap of about 0. 95ev and the very high light absorption coefficient ( < 700nm 時 ， > 5 10 ~ 5cm ~ - 1 ), it might be suitable for sensitization solar cells and in the form of ultrathin films

    Fes _ 2 （ pyrite ）是一種具有合適禁帶寬度（ e _ g 0 . 95ev ）和較高光吸收系數（ < 700nm時， > 5 10 ~ 5cm ~ - 1 ）的半導體材料，其組元元素儲量十分豐富、無毒，而且在制備太陽能電池時可以以薄膜形式使用，成本較低，與已有半導體材料相比，是一種較有研究價值的太陽能電池材料。
  13. Then this paper goes on to the factors that affect the oil foreign trades, including domestic oil supply, domestic oil demand, the level of foreign trade development, exchange rates and changes caused by entering wto. in studying the supply and demand gap, this paper uses a supply and demand balance method to decide the gap and uses method of domestic energy consumption development and method of energy elastic coefficient to estimate the future demand

    然後本文又分析了影響中國石油對外貿易趨勢的主要因素，重點對中國石油的供需因素進行了差額分析，分別運用中國能源消費增長趨勢、能源彈性系數法來大致預測了中國未來的石油需求，並通過供應和需求的對比，得出了中國未來所需要用石油對外貿易來彌補的供需缺口。
  14. According to the theory of electromagnetic fields, the large salient synchronous generator with fractional stator slot are calculated and analyzed by the finite element method ( fem ) in this paper. the fourier analysis method is applied to decompose the air gap magnetic density into the basic spatial component and a series of harmonic components and wave shape eigen coefficient of air gap magnetic field are calculated

    本文根據電磁場理論，從耦合場的弱耦合角度首先計算了定子具有分數槽繞組的大型水輪發電機的電磁場，採用付立葉諧波分析的方法把氣隙磁密分解為空間基波和一系列諧波，進而計算出氣隙磁場波形特徵系數。
  15. The results demonstrated output gap coefficients were not significant both in interval of 1980 - 2001 and in interval of 1996 - 2001, which was an brilliant comparison to the output gap coefficient significant in interest rate rule in the same period. this illuminates the descended of effects of money supply on economy and the ascended of interest rate ' s influence on economy

    1996 ? 2001年期間的貨幣供應量增長規則的產出缺口系數不顯著，與同期利率規則的產出缺口系數顯著形成對比，只能說明貨幣供應量對經濟的調控能力逐漸下降，而利率的調控能力逐漸上升。
  16. Fe layers of different thickness have been converted to fes2 thin films by thermal sulfidation. the influence of the thickness on the crystal structure, electrical resistivity, carrier concentration, absorption coefficient and energy gap of fes2 thin films have been investigated

    採用硫化不同厚度的fe膜制備了不同厚度的fes2薄膜的方法，研究了不同厚度fes2薄膜的晶體結構、電阻率、載流子濃度、光吸收系數以及禁帶寬度。
  17. With the introduction of the dopants, the effective mass of carriers was changed and the seebeck coefficient was increased. at the mean time, the dopants reduced the forbidden energy gap, which changed the carrier concentration and thus increased electrical conductivity. by calculating the forbidden energy gap and electrical conductivity of mg2si specimen doped with different amount sb, the mechanism of transference changed abruptly at 625k

    在mg _ 2si熱電材料基體中摻雜te 、 sb元素后，在結構中引入了缺陷，增大了體武漢理工大學博士學位論文系中載流子有效質量，提高了seebeck系數;降低了體系導電活化能，提高了電導率，同時也降低了熱導率。
  18. Then, according to the cause of formation analysis, find out that the influential factor of liquidity risk mainly derive from two aspects - the internal structure of asset and liability and external economic environment, affirm and quantitatively analyze the influential degree of these factors for liquidity risk by means of static index method, correlation coefficient method, liquidity gap method, consequently acquire the major influential factor of liquidity risk

    然後，結合成因分析，找出國有商業銀行流動性風險的影響因素主要來自於銀行自身資產負債結構和外部的宏觀經濟大環境兩個方面，並分別利用靜態指標法、相關系數法、流動性缺口模型法對影響因素對流動性風險的影響程度加以量化確認，從而明確現階段流動性風險的主要影響因子。
  19. Due to its intrinsic merits, such as wide band gap, high electron saturated drift velocity, high melting point, good coefficient of thermal conductivity, anti - radiation and good chemical stability, gallium nitride as a direct band gap semiconductor has become the promising material for the application of short - wave light - emitting devices and high temperature, high frequency and high power electronic devices

    Gan是直接帶隙半導體材料，以其禁帶寬度大、電子飽和漂移速度大、熔點高、熱導率高、抗輻射能力強和化學穩定性好等優點成為製造短波長光發射器件及高溫、高頻、大功率電子器件的理想材料。
  20. The shimadzu uv - 3101 spectrophotometer was employed to get the uv - visible transmission and reflection spectra. both of the absorption coefficient ( a ) and optical band gap ( eg ) were calculated from the transmission and reflection spectra of the films. it was observed that eg decreased with an increase in the deposition pressure

    採用紫外-可見光分光光度計測定了納米- sic薄膜透射光譜和反射光譜，並通過樣品的透射光譜和反射光譜計算了納米- sic薄膜吸收吸收系數和光學帶隙eto實驗結果表明，增大工作氣壓導致納米- sic薄膜的光學帶隙的減小。
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