gate electrode 中文意思是什麼
gate electrode
解釋
閘電極-
Most of the radiation is not energetic enough to penetrate the gate electrode, so damage is confined to the periphery of that electrode.
大多數輻射沒有足夠的能量來穿透柵電極，因此，損傷被限制在電極的周圍。 -
It is found that the main electronic conduction mechanism in the high field regions of the i - v characteristics is identified to be fowlernordheim tunneling. the effect of y ray on sic mos c - v characteristics depends strongly on the bias voltage applied to the gate electrode during irrad
當氧化層中存在較強電場時，電離輻照對s匯mos電容的影響會更明顯， sicmos器件比st器件具有更好的抗y輻照的能力。 -
We also studied some characteristics of sidagating effect using mesfet fabricated in planar boron implanted process including photosensitive, hysteresis, influence of sidegating effect on mesfet threshold voltage, influence of drain - source voltage on sidegating threshold voltage, influence of exchanging drain and source electrode on sidegating threshold voltage, relation between sidegating threshold voltage and the distance between side - gate and mesfet, relation between sidegating effect and floating gate, and so on
本文還採用平面選擇離子注入隔離工藝，開展了旁柵效應的光敏特性、遲滯現象、旁柵效應對mesfet閾值電壓的影響、 mesfet漏源電壓對旁柵閾值電壓的影響、漏源交換對旁柵閾值電壓的影響、旁柵閾值電壓與旁柵距的關系、旁柵效應與浮柵的關系等研究。 -
Internal field generated by contact potential of gate electrode and substrate is considered to be responsible for the enhancement of c - v hysteresis. we first incorporate e - beam evaporation of hf with post thermal oxidation to fabricate hfo2 for the application of gate dielectrics
硅化物主要是由沉積過微溯博士裕文搏要程中hf和出的互擴散引起的，而熱氧化可以將其轉化成具有較高介電常數的硅氧化物hfxsiyo 。 -
Scr silicon controlled rectifier - - a three - electrode solid - state device which permits current to flow in one direction only, and does this only when a suitable potential is applied to the third electrode, called the gate
可控硅整流器可控硅整流器? ?三電極固態元件，只有當匹配的電壓作用於第三電極（選通電極）時，才能夠保證電流朝一個方向流動。
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