gate oxidation 中文意思是什麼
gate oxidation
解釋
柵極氧化-
Problems about fabrication of sige - oi substrate, low - temperature gate oxidation and source / drain ion implantation are discussed after considering technology level and reported articles
然後用二維模擬軟體medici模擬，得到器件的閾值電壓約為- 0 . 1v ，泄漏電流很小。 -
Internal field generated by contact potential of gate electrode and substrate is considered to be responsible for the enhancement of c - v hysteresis. we first incorporate e - beam evaporation of hf with post thermal oxidation to fabricate hfo2 for the application of gate dielectrics
硅化物主要是由沉積過微溯博士裕文搏要程中hf和出的互擴散引起的，而熱氧化可以將其轉化成具有較高介電常數的硅氧化物hfxsiyo 。 -
4. investigation are made into preparations of thin gate - oxides for strained si channel mosfet ’ s using pecvd at 300 and low - temperature ( 700 ? 800 ) thermal oxidation, respectively
4 .分別對300 c下採用等離子體增強化學氣相淀積（ pecvd ）和700 ~ 800 c下採用熱氧化技術制備sigehmos器件柵介質薄膜進行了研究。
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