gate transistor 中文意思是什麼

gate transistor 解釋
選通晶體管
  • gate : n 1 大門，扉，籬笆門，門扇。2 閘門；城門；洞門；隘口，峽道。3 【冶金】澆注道，澆口，切口；【無線...
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. Bigfet bipolar isolated - gate field effect transistor

    雙極型絕緣柵
  2. The level adjustment circuit 100 lowers the clock signal input to the first clock terminal ck1 by a predetermined value from h level and provides the signal to the gate of the transistor q5

    電平調節電路100將送往第一個時鐘終端ck1的時鐘信號從h電平降低一個預定值，並將此信號送往晶體管q5的輸入端。
  3. High power solid modulator with insulated gate bipolar transistor

    絕緣柵控雙極晶體管大功率固態調制器
  4. The main work of this thesis analyzes the organic static induction transistor ' s operational mechanism, and researchs the change of gate length, change of gate - drain distance and change of electric channel breadth for operational characteristics influence of organic static induction transistor

    本論文的主要工作是解析有機靜電感應三極體的工作機理，並研究了柵極長度變化、柵漏極間距變化和導電溝道的寬度變化對有機靜電感應三極體工作特性的影響。
  5. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  6. In the synchronous " model, based on the idea of polygonal flux linkage locus, by means of constructing the switch state period table of three phrase voltage inverter is required. in the brushless model, the igbt ( isolated gate bipolar transistor ) switch state period table is gained by gal ( generic array logic ) which analyzes the signal of position feed - back

    在同步方式下，基於多邊形磁鏈軌跡法的思想，用作圖法求得三相電壓型逆變器的pwm波形序列；在無刷直流方式下，用gal對位置反饋信號進行邏輯綜合，得到開關管的導通規律。
  7. In order to comprehend schottky gate of organic static induction transistor, chapter two expatiates characteristics of pn junction and schottky junction

    為了理解有機靜電感應三極體的肖特基柵極原理，本文在第二章闡述了pn結和肖特基結的特性。
  8. Insulated gate bipolar transistor modules arm and pair of arms

    絕緣柵雙極型晶體管模塊.臂和臂對
  9. A modern power electron power component igbt ( insulate - gate bipolar transistor ) is used as the main power switch component of power converter. it takes 80c196mc single - chip as core processor

    電源變換器的功率開關器件採用現代電力電子功率器件igbt （ insulategatebipolartransistor ，絕緣柵雙極型晶體管） ，控制系統以80c196mc單片機作為控制核心。
  10. This paper demonstrates how to generate variable pwm waveform based on standard cpld device, the proposed circuit is incorporated with mcu to provide simple and effective solution for high - performance pwm converters. in the brushless model, the igbt ( isolated gate bipolar transistor ) switch state period table is gained by mc33035 which analyzes the signal of position feed - back

    這部分功能在cpld器件中用vhdl語言開發實現，其isp （在系統編程）方式使得設計與維護都比傳統方法方便靈活，由於逆變器開關元件的觸發信號是由硬體來產生的，因此更容易實現準確的高速實時控制。
  11. With respect to a bipolar transistor, the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction

    就雙極型晶體管而言，其門電流等於或超過必要的值，使發射極集電極充分導通的一種狀態。
  12. The feasibility and effectiveness of the iddt testing are both validated by experiments. at last, transistor bridging faults are simulated based on iddq testing and gate bridging faults and stuck - at faults based on voltage testing through detaching a pattern pair into two independent patterns

    最後，把一個輸入向量對看成兩個獨立的向量，分別採用穩態電流測試方法和電壓測試方法模擬橋接故障的晶體管級故障和橋接故障的門級故障及固定故障。
  13. In this paper, a phase shifting pulse width modulated ( pwm ) soft switching high voltage invert power supply has been developed with the use of the principle of advanced invert technique and the new type of power semi - conductor device - insulated gate bipolar transistor ( igbt )

    本文採用最新的逆變思想與新型的開關器件?絕緣柵型雙極晶體管（ igbt ） ，研製出了移相式pwm軟開關高壓逆變電源。逆變技術發展至今，已經逐漸向大功率方向發展。
  14. Development of carbon dioxide welding machine with insulated - gate bipolar transistor inverter controlled by microcomputer

    微機控制的絕緣柵雙極晶體管逆變二氧化碳焊機
  15. Preparation of bi2 ti2 o7 thin film and its application in insulation gate field effect transistor

    7薄膜的制備及在柵場效應管中的應用
  16. According to the following design theory : the dsp calculates in real time and produces three phases spwm waves to control the on or off of the 6 igbts in ipm respectively. ipm then inverts the commutated single phase direct current ( insulated gate bipolar transistor ) into three phases alternating current. when modulated signals of spwm are changed, the on - off time of switches also changes, so as to the voltage and frequency of output signals

    本文提出了一種基於dsp （數字信號處理器tms320f240 ）的通用的三相間接變頻電源系統，利用分段同步調製法和混合查表法，實時計算不同頻率下的采樣周期、電壓幅值、輸出脈寬，產生雙極性spwm波形，經驅動放大後用于ipm （ intelligentpowermodule ）中的絕緣柵雙極型晶體管柵級驅動，以控制電源的輸出電壓和頻率，實現變頻電源的智能數字控制。
  17. This paper has designed a inverter power supply of volume 2kva, working frequency 20khz., based on that has analyzed the characteristic of igbt ( insulated gate bipolar transistor ). it was provided the working theory of dc voltage circuit and bridge type invert circuit

    本文在分析了igbt （絕緣柵雙極晶體管）特性的基礎上，設計了一臺容量為2kva 、頻率為20khz的高頻逆變電源。
  18. The most effective converter that fits for such kind of application is a well - known full - bridge three - phase vsi ( voltage source inverter ) converter with igbt ( insolated gate bipolar transistor ) modules, which can be used in wind power generation system or other general purpose utilizations such as asd ( adjustable speed drive ), active rectifiers, ac power supplies, and so forth

    最適合的變換器就是igbt （集成門極雙極性晶體管）三相全橋電壓源變換器，這種拓撲結構的變換器可以應用到風力發電系統或者其他通用的場合，比如asd （變速驅動）系統、有源整流、交流電源等等。
  19. Insulated - gate bipolar transistor - igbt

    絕緣柵雙極晶體管
  20. This paper investigates the insulate gate bipolar transistor ( igbt ) used as the main switch in pulsed power supply. firstly, the igbt " s characteristics, principle and applications are introduced

    本文在分析了中大功率igbt特性、工作原理及應用背景的基礎上，將其作為材料表面防護處理的特種脈沖電源主功率開關器件。
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