h band 中文意思是什麼

h band 解釋
h波段
  • h : = 【電學】 henry; 【化學】 hydrogen; 【物理學】磁場密度 (intensity of magnetic field) 地磁水平...
  • band : n 1 帶,繩;帶形物;箍;箍條;嵌條;鑲邊;鋸條; 〈pl 〉 (法官等的)寬領帶。2 束縛,羈絆;義務;...
  1. Abstract : a new waveguide which can change the wide wall of a rectangular waveguide into a symmetric arc wall is named as a cam - rectangular waveguide. comparing to sectoral waveguide, the new waveguide has the same voltage characteristics and is easier to be produced and fixed. an approximate formula of the dominant mode fields and the normalized conductance of a longitudinal resonant slot cut in the curved wall of a cam - rectangular waveguide are given. a resonant slot linear array in c & x band is designed, in which the slot voltage distribution is equiphase and the input is matched. the input voltage stationary ware ratio and the h - plane pattern of the antenna are measured. the experimental results show the conformance with theoretical results

    文摘:把常用的矩形波導一個寬面改成圓弧形構成的波導稱為圓突-矩形波導.這種波導與扇面波導相比:電性能相當;波導管結構更加簡單,容易加工,便於安裝.文中給出圓突-矩形波導中主模場,圓曲面上縱向槽歸一化諧振電導近似公式.設計了c和x波段波導曲面縱向諧振縫隙線陣,縫隙電壓相位為同相分佈,輸入端匹配.實際測量了天線輸入端電壓駐波比和h面方向圖,理論與實驗相吻合
  2. At present, many products developed by the company have won scientific and technological achievement award of tianjin, such as finishing equipment in 500 hot - rolled ribbon steel production line, 750 hot - rolled band steel production line, roughing and finish rolling equipment in 1070universal h section productionline

    目前公司開發研製的「 500熱軋窄帶鋼生產線精裝精整設備」 、 「 750熱軋帶鋼生產線」 、 「 1070萬能h型鋼生產線粗精軋設備」等多種產品均已獲得了天津市科技成果獎。
  3. In this paper, the theory and implementing method of video encoder based on the itu - t h. 263 video coding for low bit rate communication standard are studied deeply in order to satisfy the demand of narrow - band video communication

    為了在窄帶通道上實現視頻通信,本文對基於itu - t的低比特率視頻通信編碼標準h 263的視頻編碼器的原理和實現方法作了深入的研究。
  4. The way of widening the band is realized by employing the inverted parasitic patch and the thick and low dielectric constant substance. with this treatment, the relative band of the antenna can be widened up to 20 %. and by adopting the way of two h - slots arranged in a “ t ” configuration, the isolation is improved

    微帶天線的頻帶展寬通過採用倒懸寄生貼片和較厚的低介電常數的介質來實現,經過這樣處理后的天線帶寬可以達到20 %以上;而隔離度的改善則是採用了兩個h形縫隙排列成「 t 」型結構。
  5. The antenna is obtained by extending the longitudinal strip of the fin - line, and etched on a metallized dielectric substrate. it is operating at ka band ( center frequency : 34ghz ), which has a good agreement between simulated and measured results. its e - and h - plane 3db main lobe beamwidth are 79. 25 and 80. 03 degrees respectively with sidelobes less than - 10db

    天線工作的中心頻率為34ghz , e面和h面測試方向圖主瓣寬度分別為79 . 25o和80 . 03o ,旁瓣電平均小於- 10的db ,模擬和試驗結果基本一致,所設計天線的各項指標經測試基本達到要求。
  6. So, the decrease of optical band gap and the increase of photosensitivity of a - si : h films is the result of the decrease of hydrogen content, especially incorporated as polydride

    因此, a - si : h光學帶隙的減少以及光敏性的增加是膜中氫含量尤其是以多氫化合物結合的氫含量減少的結果。
  7. The photoelectric property of a - si : h films is closely associated with hydrogen content in films. on the one hand, hydrogen incorporated as monohydride ( si - h ) saturates dangling bonds in films, and on the other hand, hydrogen incorporated as polyhydride ( si - h2, si - h3, ( si - h2 ) n ) introduces defect in films and thus increases the density of localized electronic states in band gap

    A - si : h薄膜的光電特性同膜中的氫存在密切關系,一方面,氫以單氫化合物( si - h )方式結合到膜中,從而飽和了膜中的懸掛鍵;另一方面,氫以多氫化合物( si - h2 、 si - h3和( si - h2 ) n )方式結合到膜中,反而在膜中引入了缺陷,使帶隙中的局域態密度增大。
  8. Finally, in view of the absorbed po ~ ver of the terminated load and the realizablity of couplers, a proper eclectic distribution of coupling degree of couplers is computed synthetically. 2. a small, light, compact, ~ vide band and high performance h - t coupler with lognitudinal dualslot is presented

    根據天線方向圖要求,確定陣面的口徑分佈,在此基礎上,結合慢波線終端負載的吸收系數,以及耦合器耦合量的可實現性,綜合折中考慮,計算選擇出合適的耦合器耦合度分佈。
  9. At the same time, we also found optical band gap decreases and photosensitivity of a - si : h films increases with the increase of substrate temperature

    同時,我們也發現伴隨著襯底溫度升高,光學帶隙減少,光敏性增加。
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