high grown 中文意思是什麼
high grown
解釋
長滿高大植物的。-
Five grown men, and three of them - trelawney, redruth, and the captain - over six feet high, was already more than she was meant to carry. add to that the powder, pork, and bread - bags. the gunwale was lipping astern
五個成年人，而且其中的三個特里羅尼雷卓斯，以及船長身高都超過了六英尺，這樣就已超出了劃子的容量，再加上火藥腌肉和麵包袋，這使得劃子的尾部幾乎與水面平。 -
Design of high brightness cubic - gan led grown on gaas substrate
發光二極體的工藝設計與實現 -
The as - grown crystals were characterization by cutting and directional, x - ray diffraction, high resolution ohmmeter, ir transmission spectroscopy, visible light absorption spectroscopy, scan electronic microscopy ( sem ) and positron annihilate time technique ( pat ). the ir transmittance of czt single crystals grown with cd - riched is about 53 %, while 23 % with no cd riched
採用解理實驗、 x射線衍射、電學性能測試、紅外透過譜測試、可見光吸收譜測試、 sem蝕坑分析、探測器的試制等分析測試方法，並首次採用正電子湮沒壽命譜分析方法來研究czt單晶體的空位缺陷，綜合表徵了所生長的晶體的質量和性能。 -
What is more, some of the pollen grains and spores i found in the clays and lignites came from conifers and tree ferns that could have grown only at the high altitudes of a mountain range
而且我在黏土及褐煤中發現的花粉粒與孢子，屬于針葉樹及樹蕨，它們只生長在高海拔的山區。 -
Dickson despommier has a different vision : fresh, healthful food grown in glittering high - rise city farms
但迪斯波米耶有不同的看法：在金碧輝煌的高樓城市農場重新鮮健康的食物。 -
The degree of saturation of fatty acids has been measured for thylakoid membranes isolated from leaves of common beans differing in heat tolerance and grown under optimal and high temperature
摘要以耐熱性不同的菜豆品種為材料，研究高溫脅迫下類囊體膜脂脂肪酸組成及飽和度的變化。 -
Was founded in 1995 which is a sino - foreign joint venture specially manufacture of electret condenser microphones. since then, gongda has grown to become a leading provider of high - performance, cost effective oem microphone solutions to the personal computer, telecommunications, and multimedia industries
公司擁有各類工程技術人員105名，其中碩士研究生以上學歷6名，工學或理學學士68名，分別從事產品研發工藝研發自動化改造研發和國際領先技術綜合研發等。 -
Besides, the growth of gasb expitaxy film was monitored by reflection high energy electron diffraction ( rheed ). the rheed images and intesity oscillation are collected by computer system. it showed that the gasb film prepared in 400 was amorphous and it became monocrystalline when the temperature rose to 500. atomic force microscope ( afm ) was applied to analyse the surface morphology of the films which were grown in diffrent growth rates or substrate temperature. the analysis were compared to simulation results. the experiment results indicated it was easy to form clusters when the rate of growth is high or
此外，本文通過反射式高能電子衍射（ rheed ）監測了gasb外延薄膜的生長，利用rheed強度振蕩的計算機採集系統實現了rheed圖像和rheed強度振蕩的實時監測。實驗發現在400生長的gasb薄膜為非晶態，溫度升高到500薄膜轉變為單晶。利用原子力顯微鏡對不同生長速率和襯底溫度生長的gasb薄膜的表面形貌進行觀察分析，並與模擬結果進行比較。 -
Xinyuan graphite mould plant is in luocun town, nanhai district, foshan city, it is located the intercrossing of guangfo road andjichang road, so ti has convenient communication. after 10 year of development since its establishment in 1995, it has grown into an important manufacturer in the field of graphite products in china. the plant covers an area of 2000m2, it has years of history in producing graphite products and has accumulated rich knowledge and practical experience and cultivated a high quality professional technical group and capable employee team
鑫淵石墨模具廠，位於佛山市南海區大瀝鎮，廣佛路和機場路交叉口，交通十分便利，本廠自95年建廠以來經過8年的發展在全國同類行業中已經成為重要生產廠家之一。本廠佔地近2000平米。生產碳石墨製品已有多年歷史，積累了豐富的理論知識和實踐經驗，培養了一支高素質的專業技術隊伍及精幹的職工隊伍。 -
The microstructure morphology, the concentration, the infrared transmittance, and the x - ray rocking curves measured showed that a long single crystal part and axial steadily distributed zone of the concentration existed in the as - grown crystals. the radial concentration distribution has relatively high uniformity
通過觀察生長態晶體中的微觀組織形貌，並測量晶體軸向和徑向上不同位置處的成分、紅外透過率和x射線回擺曲線，發現晶內有較長的單晶段和軸向成分穩定區。 -
Variety trial result for cucumber grown in solar greenhouse during winter and early spring in high altitude and humid area of gansu
高寒陰濕區日光溫室冬春茬栽培黃瓜品比試驗初報 -
A fortnight after receiving the letter, prince vassilys servants arrived one evening in advance of him, and the following day he came himself with his son. old bolkonsky had always had a poor opinion of prince vassilys character, and this opinion had grown stronger of late since prince vassily had, under the new reigns of paul and alexander, advanced to high rank and honours. now from the letter and the little princesss hints, he saw what the object of the visit was, and his poor opinion of prince vassily passed into a feeling of ill - will and contempt in the old princes heart
安娜帕夫洛夫娜舉辦晚會之後，皮埃爾熬過了一個心情激動的不眠之夜，夜裡他斷定，娶海倫為妻是一件不幸的事，他要避開海倫，遠走高飛，皮埃爾作出這一決定后度過了一個半月，他沒有從瓦西里公爵家裡遷走，他很恐懼地感到在人們的眼睛里，他和海倫的關系日甚一日地曖昧，他無論怎樣都不能恢復他以前對她的看法，他也不能離開她，他覺得多麼可怕，可是他應當把自己的命運和她聯系起來。 -
Meanwhile, root to shoot ratio of the ramet grown in low light intensity and high nutrient availability significantly increased while that of the ramet grown in high light intensity and low nutrient availability greatly decreased
同時，低光高養下分株的根冠比相對增加，而高光低養下分株的根冠比相對下降。 -
Studies on integrated cultivation techniques for cotton high yield in east part of shaanxi cotton grown areas
陜西東部棉區棉花高產綜合配套栽培技術研究 -
This instrument can be used for study on the structure of mother liquor grown high - temperature crystals and the change of structure during the liquid - solid phase transfer
該裝置可用於研究高溫晶體生長過程中母液相的結構以及固液相轉變過程中結構的變化。 -
In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth
本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。 -
Prosperity green tea is comprised of the highest quality green tea grown in the high mountains along the lan - chung river in yunnan province
金玉滿堂? ?本品選用產于中國雲南瀾滄江畔海拔1000公尺以上的萬畝生態古茶林之玉芽精製成的高級綠茶，再經獨特工藝以新鮮芳香的玫瑰花窨制而成。 -
Research and development of high - quality gemstone crystals grown by hydrothermal method
剛玉類和綠柱石類寶石晶體 -
This dissertation focuses on how to develop a high performance damping mechanism based on multi - energy transitions, which is independent or little dependant with the viscoelasticity of polymer matrix. three sections are mainly included in this dissertation as follows : chlorinated polyethylene ( cpe ) / piezoelectric ceramic ( pzt ) / vapor grown carbon fiber ( vgcf ) composites ; cpe / 2, 2 ' - methylene - bis - ( 4 - methyl - 6 - cyclohexylphenol ) ( zkf ) / vgcf composites ; organic hybrids made from cpe and small molecules cpe / pzt / vgcf composites : the damping composites of multi - energy transitions mechanism were produced by mixing pzt and vgcf into cpe. in this system, the mechanical vibration energy that was transmitted to cpe was found to convert into joule ' s heat through conduction paths between vgcf in the polymer matrix, so the vibration fades away
本論文主要包括三個方面的研究內容： ?氯化聚乙烯（ cpe ） /壓電陶瓷（ pzt ） /氣相生長碳纖維（ vgcf ）復合材料； ? cpe /雙[ （ 2 -羥基- 3 -環己基- 5 -甲基） -苯基]甲烷（ zkf ） / vgcf復合材料； ? cpe基有機小分子混雜型復合材料cpe / pzt / vgcf減振復合材料：利用壓電和導電填料填充高聚物基體，當復合材料受到機械振動時，通過高聚物基體將機械振動能傳遞到壓電陶瓷粒子上，利用壓電陶瓷的壓電效應，將機械能轉換成電能，則電流在導電粒子產生的迴路中流動，由於導電迴路具有一定的電阻，所以電能又轉變成熱能耗散掉，從而起到減振的目的。 -
Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment
Sige - simox工藝方面：首次採用硅（ 100 ）襯底上直接外延的100nm厚sige的樣品中注入高劑量的o離子，通過退火處理成功制備了sige - oi新結構，即sige - simox工藝，證實了以45kev注入3 10 ~ （ 17 ） 7cm ~ （ - 2 ）劑量的氧離子，隨后在氧化層的保護下經1250 ， ar + 5 o _ 2氣氛的高溫退火（ 5小時）過程，可以制備出sige - oi新型材料；實驗中觀察到退火過程中的ge損失現象，分析了其原因是ge揮發（ ge通過表面氧化層以geo揮發性物質的形式進入退火氣氛）和ge擴散（ ge穿過離子注入形成的氧化埋層而進入si襯底中） ，其中ge擴散是主要原因；根據實驗結果及實驗中出現的問題，對下一步工作提出兩個改進的方案：一是通過在si襯底中注入適量h ~ + / he ~ +形成納米孔層來阻斷ge擴散通路，二是可以通過控製表面氧化來調節安止額士淤丈撈要表面sige層中的ge組分，從而部分解決sige
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