high temperature crystal growth 中文意思是什麼

high temperature crystal growth 解釋
高溫晶體生長
  • high : adj 1 高的〈指物，形容人的身高用 tall〉；高處的；高地的。2 高級的，高等的，高位的，重要的。3 高尚...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • crystal : n 1 結晶，（結）晶體；晶粒；水晶（＝rock crystal）；石英。2 【無線電】晶體。3 結晶玻璃；雕玻璃；...
  • growth : n. 1. 生長，成長，發育，發展。2. 栽培，培養。3. 生長物，產物；【醫學】瘤，贅生物。4. 【經濟學】（資本價值與收益的）預期增長。
  1. In addition, the growth temperature of films in high substrate temperature process is more similar to that of the single crystal growth in which the hexagonal system shows the sheet growth habit

    高溫下的薄膜生長更接近於單晶的生長條件，六角晶系晶體的結晶習性是片狀生長，表現為片狀的單晶，這種習性受晶體自身結構特性的限制。
  2. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  3. Its potential and maximal application field is for semiconductor films and optic films that mainly rely on the high - orientation and single crystal diamond films and big area transparent diamond films. but it is widely existent for defects in the process of diamond films growth and also it is difficult to get parameters stability such as temperature etc in wide area, as a result, the diamond films " orientation is changed, and it is very difficult to get the high - orientation and single crystal diamond films and big area transparent diamond films

    金剛石膜潛在的最大應用領域是作為半導體薄膜和光學薄膜，而這個領域的開發在很大程度上依賴于高取向和單晶金剛石薄膜以及大面積透明金剛石膜的獲得，但由於金剛石膜生長過程中缺陷的普遍存在以及大面積范圍內均勻溫度場等參數的難以獲取，從而導致金剛石膜的取向發生改變，使高取向和單晶金剛石薄膜以及大面積透明金剛石膜的獲得十分困難。
  4. Heat treatment can eliminate stress of crystal and facilitate crystal growth. pbo as mineralizer accelerates nucleation and crystal growth rates. the results of xrd demonstrate that the single perovskite phase plzst is stable under the high temperature

    不同工藝條件下形成plzst晶體的情況也不同，合適的工藝條件為： 750保溫2小時就可以生成plzst晶體；在一定的成型壓力下可以促進plzst晶體的長大；利用退火來消除晶體的內應力也有利plzst晶體的長大；加入過量pbo有利plzst晶體的生成。
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