high temperature devices room 中文意思是什麼

high temperature devices room 解釋
高溫設備室
  • high : adj 1 高的〈指物，形容人的身高用 tall〉；高處的；高地的。2 高級的，高等的，高位的，重要的。3 高尚...
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  • devices : 措施工藝裝備
  • room : n 1 室，房間。2 場所，席位，位置，地位，空間。3 餘地，餘裕；機會。4 〈pl 〉一套房間；寄宿舍；出租...
  1. Cadmium selenide ( cdse ) single crystal is regarded as one of the most promising materials for room temperature nuclear radiation detectors, but cdse detectors have not been studied in detail because of the lack of high quality cdse single crystals and suitable technology for this semiconductor and the devices

    Cdse單晶體是最有前途的室溫核輻射探測器材料之一，但由於沒有制備出高質量的cdse單晶體，加上沒有成熟的半導體材料加工技術與器件製作工藝，人們對cdse探測器沒有進行深入的研究。
  2. Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices

    由於氧化鋅具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，因而被認為是製作紫外半導體激光器的合適材料。
  3. It has high exciton binding energy of 60 mev, which ensures efficient uv emission from the exciton and make it suitable for uv laser - emitting devices. since the first observation of the stimulated ultraviolet emission at room temperature, zno has become another hotspot in the region of uv light emitting researching

    Zno不僅是繼gan之後紫外發射材料研究的又一研究熱點，而且近年來zno薄膜作為ito薄膜的很有發展前景的替代材料，正引起人們日益廣泛的關注。
  4. Cdse, a ii - vi compound with direct transition, wide - band - gap and high atomic number ( 48, 34 ), is regarded as a new effective materials for room temperature nuclear radiation detectors and photoconductive devices, and can be used in many fields

    Prince提出的優良室溫核輻射探測器材料必須具備的要求，因而被認為是制備室溫核輻射探測器的最有前途的新材料之一，可廣泛應用於探礦、無損檢測、核醫學、環境監測、軍事和空間宇航技術等領域。
  5. Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices. since the first observation of the stimulated ultraviolet emission at room temperature, zno has become another hotspot in the region of uv light emitting researching

    氧化鋅在室溫條件下具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，是製作紫外光電子器件的合適材料，自1997年首次發現zno室溫紫外受激發射以來， zno研究已成為繼gan之後紫外發射材料研究的又一研究熱點。
  6. Zno is promising : high - quality zno with very low defect densities can be synthesized at much lower temperature ; zno can emits light with shorter wavelength than blue light emission from gan ; zno has higher excitonic binding energy promising strong photoluminescence from the bound excitonic emissions even at room temperature ; by alloying with mgo, tuning of the band gap while keeping the zno hexagonal structure can be achieved by forming mgxzn1 - xo. as we know, band gap tuning is important to produce efficient and lasting light emitting diodes ( led ) and other electronic devices

    利用mg _ xzn _ （ 1 - x ） o薄膜，可以在保持zno六方纖鋅礦（ wurtzite ）結構的同時有效調節調節薄膜的禁帶寬度，制備出基於氧化鋅的量子阱、超晶格及相關的光電器件，如基於氧化鋅的紫外光探測器、紫外發光二極體和紫外激光二極體等光電子器件。
  7. But different from bipolar transistors, some of them show that the lower the radiation dose rate was applied, the less the devices were damaged, and the damage induced by high dose rate irradiation can be eliminated by a long time anneling at room temperature

    有些電路雖有不同劑量率的輻照損傷差異，但這種差異可通過室溫退火得到消除，因而只是時間相關的效應。
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