high-frequency transistor 中文意思是什麼

high-frequency transistor 解釋
高頻晶體管
  • high : adj 1 高的〈指物，形容人的身高用 tall〉；高處的；高地的。2 高級的，高等的，高位的，重要的。3 高尚...
  • frequency : n. 1. 屢次，頻仍，頻繁。2. （脈搏等的）次數，出現率；頻度；【物理學】頻率，周率。
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  2. The key parts of barretter are made of irf840 field - effect transistor, the magnetic ring and high frequency choking coil which adopting negative temperature index. such components can provide barretters a wide applicable voltage 160v - 250v. low power consumption, minor temperature rise, stable functions, long life - span

    鎮流器核心元件採用irf840場效應三極體，磁環及高頻扼流圈採用負溫系數，這樣的元件選擇使整流器適用電壓范圍寬160v - 250v ，功耗低，溫升小，性能十分穩定，確保其擁有很長的壽命。
  3. A high efficiency dual - band rf power amplifier has an output and / or input of a high frequency transistor well terminated at the second harmonic frequency for dual - band operation

    本發明乃一種高效率雙頻射頻功率放大器，提供高頻電晶體的輸出端與?或輸入端于雙頻操作中有良好的二階諧波終止。
  4. Semiconductor discrete devices. detail specification for type 3da89 high - frequency power transistor

    半導體分立器件. 3da89型高頻功率晶體管詳細規范
  5. Semiconductor discrete device. detail specification for type 3da150 high frequency and power transistor

    半導體分立器件. 3da150型高頻功率晶體管詳細規范
  6. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162

    電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管
  7. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722

    電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管
  8. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688

    電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管
  9. To compare with transistor ( complete solid - state ) high - frequency linear power amplifier, there are some disadvantages : bad stability and reliability, low efficiency, high cost for operating, huge cabinet, heavy maintenance work load, low security for high - voltage electricity offering, and to ensure the continuance of tv program, the transmitter must be operating with main frame and spare frame

    它們與晶體管（全固態）高頻線性功率放大器相比，存在著穩定性及可靠性差、效率低、運行費用高、發射機體積大、日常維護工作量大、高壓供電不安全、必須採用主機和備機的運行方式來確保電視節目不停播等缺點。
  10. Semiconductor discrete devices. detail specification for type 3dg135 silicon ultra high frequency low - power transistor

    半導體分立器件. 3dg135型硅超高頻小功率晶體管詳細規范
  11. Semiconductor discrete device. detail specification for silicon npn high - frequency low - power transistor of type 3dg120

    半導體分立器件. 3dg120型npn硅高頻小功率晶體管.詳細規范
  12. Semiconductor discrete device. detail specification for silicon npn high - frequency low - power transistor of type 3dg111

    半導體分立器件. 3dg111型npn硅高頻小功率晶體管.詳細規范
  13. Semiconductor discrete devices. detail specification for type 3dg144 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg144型npn硅高頻低噪聲小功率晶體管詳細規范
  14. Semiconductor discrete devices. detail specification for type 3dg143 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg143型npn硅高頻低噪聲小功率晶體管詳細規范
  15. Semiconductor discrete devices. detail specification for type 3dg142 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg142型npn硅高頻低噪聲小功率晶體管詳細規范
  16. Detail specification for electronic components. type 3da98 npn silicon high - frequency power transistor

    電子元器件詳細規范. 3da98型npn硅高頻大功率晶體管
  17. Semiconductor discrte device. detail specification for silicon npn ultra - high frequency low - noise difference match transistor of type 3dg210

    半導體分立器件. 3dg210型npn硅超高頻低噪聲差分對晶體管.詳細規范
  18. Semiconductor discrete device. detail specification for silicon npn ultra - high frequency low - noise dual - difference match transistor of type 3dg213

    半導體分立器件. 3dg213型npn硅超高頻低噪聲雙差分對晶體管.詳細規范
  19. It has been shown that the performance of sige heterojunction bipolar transistor ( sige hbt ) in high frequency is much better than that of si bipolar junction transistor ( si bjt ), and is better than that of algaas / gaas metal semiconductor field effect transistor ( algaas / gaas mesfet ) in some aspects

    Sige異質結雙極晶體管（ sigehbt ）的高頻性能大大優于si雙極晶體管（ sibjt ） ，並在某些方面優于algaas / gaasmesfet ，所以sigehbt具有廣闊的應用前景。
  20. ( 4 ) specially made a research in the key technology of uhf complete solid - state high - frequency linear power amplifier : balancing transistor high - frequency linear power amplifier and the technology of 3db power integrating ( allocating )

    （ 4 ）重點研究了uhf全固態電視發射機高頻線性功率放大器的關鍵技術：平衡式晶體管高頻線性功率放大器以及3db功率合成（分配）技術。
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