hot breakdown 中文意思是什麼
hot breakdown
解釋
熱打漿-
This paper mainly aims at the characteristics of the hardware and software structure of the parallel computer on satellite, and has fulfilled researches of fault tolerant technique in three aspects of control theories and engineering : the first research of the system level fault - tolerant module is based on the system structure of the parallel computer on satellite, a kind of cold backup module and a kind of hot backup module for multiprocessor computer have been put forward. then the research of software fault tolerant technique which is based on the operate system named rtems has been carried, the mission level fault - tolerate arithmetic and the system level fault - tolerate mechanism and strategies based on the check point technique have been put forward, at the same time the self - repair technique of software which has used the technique of system re - inject has been studied. finally the technique of components level fault - tolerant based on fpga has been studied, a kind of two level fault - tolerant project which aims at the fault - tolerant module of the parallel computer on satellite has been put forward, and the augmentative of circuit that project design realization need is little, this project can avoid any breakdown of any part logic circuit of the fpga
本課題主要針對星載并行計算機體系結構及軟體結構的特點，從如下三個方面進行了容錯控制理論研究和實踐工作:首先進行了基於星載多cpu并行計算機體系結構的系統級容錯模型研究，提出了一種多cpu冷備份容錯模型和一種多cpu熱備份容錯模型;然後進行了基於rtems操作系統的軟體容錯技術研究，提出了任務級容錯調度演算法以及基於檢查點技術的系統級容錯恢復機制和策略，同時研究了利用系統重注入進行軟體在線自修復的容錯技術;最後研究了基於fpga的部件級容錯技術，提出了對容錯模塊這一星載并行計算機關鍵部件的兩級容錯方案，實現該方案所需增加的電路少，可避免板級晶元以及fpga晶元內部任何邏輯發生單點故障。 -
This product was supervised and control by strict quantity, having a good aftersales service troops, having the breakdown in case of the boiled water machine, pleasing stir to make company hot line call, we the meeting zeal serves for you
本產品經嚴格質量監控，有一支良好售後服務隊伍，萬一開水機有故障，請撥打公司熱線電話，我們會熱誠為您服務。 -
The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping
首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。 -
Hot - carrier induced oxide breakdown shows different characteristics compared with that induced by conventional fn stress
與通常的fn應力實驗相比較，熱載流子導致的超薄柵氧化層擊穿顯示了不同的擊穿特性。 -
The main points include : the bias electric field and the charges in the traps are the main reasons to generating hot electrons, the number and the kinetic energy of hot electrons are determinative for damage degree of ga ? s bands, relaxation degree of ga ? s network reflects the degree of breakdown, and the number of the detrapping of trapped electrons reflects the degree of restoration
其主要作用機制為:偏置電場和陷阱電荷電場可產生大量熱電子，熱電子的數量和動能決定ga一as鍵的損壞程度， ga一as的斷裂程度反映pcss 』 s的擊穿類型，而退陷電荷的數量則反映了pcss ， s可恢復損傷的程度。 -
This dissertation investigates the breakdown theory and reliability characterization methods of the time dependent dielectric breakdown ( tddb ) for the ultra - thin gate oxide, and the hot - carrier effect ( hce ) in deep sub - micron mosfet ' s
本文對超薄柵氧化層經時擊穿（ tddb ）擊穿機理和可靠性表徵方法以及深亞微米mos器件熱載流子效應（ hce ）進行了系統研究。 -
The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions
主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。 -
Data from regression lines of wr on vr and yr and ( wr + vr ) indicate that lower peak viscosity, lower hot - paste viscosity, lower breakdown viscosity, higher setback viscosity and higher consistency viscosity are dominant and cool viscosity is ambidirectional
圖析顯示：低高峰黏度、低熱糊黏度、低崩解黏度、高回饋黏度及高膠質黏度為相對顯性；冷糊黏度為雙向顯性。
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