impurity band 中文意思是什麼
impurity band
解釋
雜質能帶-
There are mainly three arguments on the physical origin of the new conduction band minimum of ganas ( or galnnas ). they are band anti - crossing model, gaas conduction band mixing model and impurity band model
關于ganas的導帶帶邊的物理本質，目前主要有三種爭論較激烈的觀點，它們分別是能帶反交叉模型， gaas導帶混合模型，雜質帶模型。 -
With the development of science and technology, more and more oxide crystals are synthesized by more and more advanced technique, the new oxide crystals are incessantly synthesized and the new characters of oxide crystals are incessantly founded. corundum dopped with impurity not only is cherished because of it ' s beautiful appearance, but also is used in the fields such as electrotechnics, mechanism, laser, the optic apparatus and the underlay of semiconductor. sapphire dopped with ti3 + is the best material of the tunable solid laser. zno crystal is material of the direct gap semiconductor ( the width of forbidden band : 3. 37ev ). the excited emission in zno crystal at room temperature has been found, so the ultraviolet luminescence in zno semiconductor can be acquired at room temperature
含有少量雜質的剛玉晶體（ - al _ 2o _ 3 ）不僅由於其色澤艷麗成為人們珍愛的名貴寶石，而且由於它具有的優異性能，被廣泛應用於電工、機械、激光器，光學器件和半導體襯底材料。鈦藍寶石是目前最優異的固體寬帶調諧激光材料，用於製作飛秒脈沖可調諧激光器。氧化鋅晶體是直接帶隙寬禁帶半導體材料（禁帶寬度3 . 37ev ） ，現已發現具有室溫下受激發射特性，有可能實現室溫下半導體紫外發光。 -
When x is above 1. 3 %, the emission spectra are strongly broadened and do not show any well - defined features, and their peak positions shift to lower energies correspondingly with increasing x. the large band - gap bowing of gap1 - xnx alloy is induced by the impurity band formation due to the intercenter interaction
對中心發光的nn3束縛激子的零聲子線及其聲子伴線，並得到了nn3的所有聲子伴線（ l0 、 la 、 ta ）的s因子在約20k卜50k范圍內與溫度的關系。 -
2. in this paper, the continuity of the wavefunction and of its derivative divided by the band - mass can be satisfied and the number of the terms is small when calculating the energies of the single electron in a square quantum wire with finite barriers, then this wavefunction can also be selected as the envelope function in studying the impurity states and the excitons in the square quantum wires with finite barriers
2 .由於本文所取波函數滿足波函數的連續性條件和粒子流的守恆條件，並且計算有限深方形量子線中單電子的能量時需要展開的項數較少，故此波函數也可選為有限深方形量子線中雜質態、激子等問題的包絡函數。 -
The band structure reveals the form of the impurity levels due to the substitutional impurity in semiconductors
摻雜模型的能帶結構顯示，由於在半導體母體中進行雜質原子取代而形成了雜質能級。 -
As for the pl mechanism, except the red band, the rest are all originated from luminescence defects related to impurity, and the luminescence centers are affected by configuration of impurities, while the red emitting band may attribute to the quantum confinement effect of nano - si, but will also rely on its interface characteristic
就發光機制而言，除紅光寬帶外，均起源於氧、氮摻雜引起的缺陷發光中心，發光中心受雜質組態影響，紅光寬帶可能聯繫到量子限制效應，同時還依賴于界面特性。 -
Topics covered include : crystal lattices, electronic energy band structures, phonon dispersion relatons, effective mass theorem, semiclassical equations of motion, and impurity states in semiconductors, band structure and transport properties of selected semiconductors, and connection of quantum theory of solids with quasifermi levels and boltzmann transport used in device modeling
被覆蓋的論題包括：晶格、電子能帶結構、聲子色散關系、有效質量理論、半經典運動方程和半導體中的非純態、選擇性半導體的帶結構和輸運性質固體量子理論與準費米能級以及用於器件建模的玻爾茲曼輸運理論之間的聯系。 -
We discuss the qcse of the impurity in the finite square qwws considering impurity position, and raise a point of the qcse under the influence of the masses mismatch and the aspect ratio of the quantum well wires. without considersion of the mismatch of the effective masses between the well and barrier, we obtain the conclusion as follows : ( l ) the first band energy of the electron is decreased under the electric field
在前人工作的基礎上，我們在有效質量近似下討論了外加電場下有限深方形gaas ga _ （ 0 . 63 ） al _ （ 0 . 37 ） as量子阱線的雜質態和雜質的stark能移，並把我們的結果與前人的結果進行了比較。 -
There were troubles in the continuity of the function and of its - derivative divided by band - mass on the boundary. in the theoretical calculation, the wave function is relative to the physical properties of the impurity greatly, the envelop function f ( x, y ) is expanded in terms of the one - dimensional linear harmonic oscillator function in this paper. it satisfies the continuity of the function and of its - derivative divided by the band - mass, so it improves the precision of the function and binding energy
與以往工作不同的是，以前選用的x ， y方向電子的包絡函數f （ x ， y ）是一維有限深量子阱中波函數的乘積，在邊界上波函數的連續性和粒子流的守恆條件存在問題；而在理論計算中，波函數的選取與雜質的物理性質有密切關系，本文選取的電子的包絡函數是用一維線性諧振子的波函數展開而成的，在邊界上能夠同時滿足波函數的連續性及粒子流（ 1 / m ~ * ） f ' （ x ， y ）的守恆條件，從而使得波函數和束縛能的精確度得到了改進。 -
Uv - vis and pl spectra were used to study the energy band structure and the holding states of light - induced - electrons of tio _ ( 2 ) powder and films prepared by magnetron sputtering. the energy band structure and light - induce - electrons holding states were studied by pl spectra, conduction band and impurity energy levels were emerged together and formed a new continuum band
導帶和雜質帶連到一起形成了連續帶?雜質能帶，光生電子並不是位於導帶之上，武漢理工大學碩士學位論文而是占據了2 . 5一3 . sev的連續帶上，主要集中於2 . 65一3 . oev之間。 -
There is also energy band structure for photons in photonic crystal, which is similar as that for electrons in natural crystal ( electronic crysta1 ). localized state will ap - pear if there is an impurity or defect
光子晶體中的光子與一般晶體（電子晶體）中的電子相似，都有能帶結構，都會因為有雜質和缺陷態的存在而存在局域態。
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