ion beam sputtering 中文意思是什麼
ion beam sputtering
解釋
離子束濺射- ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
- beam : n 1 梁，棟梁，桁條；（船的）橫梁。2 船幅；（動物、人的）體幅。3 （秤）桿，杠桿，（織機的）卷軸，...
- sputtering : 飛濺
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This paper mainly discusses the designing and testing method to the dds acousto - optic mode locking. it also makes some further analysis on the critical technology - - - - - - the transducer acoustical membrane matching and transducer thinning, which can directly affect the performance of acousto - optic elements. it then analyses the heat effect of acousto - optic elements and the technology of transducer thinning by developing ion - beam sputtering of high frequency acousto - optic elements
本文重點討論了dds聲光鎖模器的設計及測試方法，討論和分析了影響聲光器件性能的關鍵工藝換能器聲學膜層匹配和換能器減薄工藝，對聲光器件的熱效應進行了測試分析，對離子刻蝕法聲光換能器減薄新工藝作了一定的探討。 -
We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem
論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。 -
In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere
我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜，即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜，分別對它們的結構、光吸收以及發光性質進行了研究。 -
Study on the fabricating method the fe / al2o3 / fe mtj and co / al2o3 / feni mtj are prepared by ion - beam sputtering systems. the fexcu ( 1 - x ) granule films were evaporated directly using a high vacuum electron beam evaporation. some samples of granule films are annealed at 340c
用高真空鍍膜機制備了fe _ xcu _ （ （ 1 - x ） ）系列顆粒膜，並對部分膜做了加熱退火處理，樣品被加熱到340並且保溫2小時。 -
Property comparison of optical thin films prepared by e - beam, ion assisted deposition and ion beam sputtering
離子輔助和離子束濺射三種工藝對光學薄膜性能的影響 -
In this thesis, we research the characters on the ion beam sputtering system, and prepare tiny films and cnx / tiny multilayers by ion beam sputtering. the best parameters of preparing cnx films are explored. we use the tiny films as template to promote the growth of cnx films
本文對離子源的濺射特性進行了研究，採用離子束濺射法制備了tin _ y單層薄膜和cn _ x tin _ y多層薄膜，探索該法制備cn _ x薄膜的最佳工藝參數，並利用tin _ y薄膜為襯底以促進cn _ x薄膜的生長。 -
The theory of ion - beam etching and ion sources are reviewed. the classification of ion - beam etching are introduced. according to the mechanism that ion sputtering leads to faceting, trenching, reflection and redeposition, some relative solutions are put forward
綜合敘述了離子束刻蝕技術和離子源的工作原理，簡單介紹了離子束刻蝕的分類，闡述了離子束刻蝕的物理濺射效應導致的刻面，開槽，再沉積等現象的產生機理及解決辦法，分析了kaufman離子源進行ribe的可行性及出現的問題。 -
Ion beam sputtering system
離子束濺鍍系統 -
Centering at soft x - ray multilayer uniformity technology, we introduce general situation of multilayer, design of multilayer structure, simulation calculation, ion - beam sputtering deposition and evaluation of samples. above all, we carry out study of improving uniformity of period thickness spatial distribution, and develop correction mask for controlling period thickness. as a result, we improve uniformity from 4. 5 % to 2. 0 %, the error of period thickness on ( 130nm field is controlled within 0. 18nm, and the reflectivity reach 35 % at center wavelength 17. 1nm
特別地，我們設計並應用膜厚擋板補償技術控制多層膜的膜厚分佈，將膜厚分佈非均勻性從4 . 5減小到2 ，周期厚度絕對差值控制在0 . 18nm以內，並且制備得實際多層膜樣品在中心波長17 . 1nm處實測反射率達到35 ，達到實用水平。 -
Meanwhile a new method was developed to prepare vo2 thin film directly from v2o5 powder. pressed v2o5 powder of 99. 7 % purity was used as sputtering target by argon ion beam
發展了一種用離子束增強沉積從v _ 2o _ 5粉末制備vo _ 2薄膜的新方法。
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