ion electron method 中文意思是什麼

ion electron method 解釋
離子電子法
  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子（學）說。
  • method : n 1 方法，方式；順序。2 （思想、言談上的）條理，規律，秩序。3 【生物學】分類法。4 〈M 〉【戲劇】...
  1. Study on the fabricating method the fe / al2o3 / fe mtj and co / al2o3 / feni mtj are prepared by ion - beam sputtering systems. the fexcu ( 1 - x ) granule films were evaporated directly using a high vacuum electron beam evaporation. some samples of granule films are annealed at 340c

    用高真空鍍膜機制備了fe _ xcu _ （ （ 1 - x ） ）系列顆粒膜，並對部分膜做了加熱退火處理，樣品被加熱到340並且保溫2小時。
  2. When the flue gas and dust past through electrical fields, they caused impact with positive and negative ion and electron between electrical electrodes to charge electric. the charged particles move and are accumulated to difficult electrical electrode due to effect of electric field force. through rapping method, the dust leaves electric electrodes and drop into the collection hopper, and the remove the dust by transportation system

    是一種煙氣凈化設備，它的工作原理是：煙氣中灰塵塵粒通過高壓靜電場時，與電極間的正負離子和電子發生碰撞而荷電或在離子擴散運動中荷電，帶上電子和離子的塵粒在電場力的作用下向異性電極運動並積附在異性電極上，通過振打等方式使電極上的灰塵落入收集灰斗中，使通過電除塵器的煙氣得到凈化，達到保護大氣，保護環境的目的。
  3. On the basis of one - electron hartree - fock approximation, the extended - ion method and ab initio method have been used to investigate the f center migration between f ~ - layers, br ~ - layers and from f ~ - layer to br ~ - layer. we have calculated the energy barrier of these three f center migrationes and energy of f center, exciton energy. the results of f center and exciton are in good agreement with the experimential data

    本文是在單電子hartree - fock近似的基礎上採用擴展離子方法和全電子從頭計算方法，研究了bafbr ： eu ~ （ 2 + ）晶格中的f ~ -離子層間的f心遷移， br ~ -層的f心遷移和f ~ -離子與br ~ -離子層間f心遷移過程中的能量勢壘和f心基態、激發態以及激子能量，對于f心和激子的研究結果與實驗符合的很好。
  4. The energy level structures of the 4d core excited configuration 4d 5s25p5, final radiative configuration 4d105s25p4 and final auger configurations 4d105s25p3 and 4d105s15p4 of csv ion and all possible decay dynamics processes related to these configurations are all determined by mcdf method. we also compared the present results of radiative transition, oscillator strength and the line width with the results obtained by experimental spectra and the quasi - relativistic configuration interaction method and got a good agreement. we also make prediction for some dominant features of the auger electron spectrum emitted by the auger decay process of the 4d95s25p6 core excited states

    論文第三章中詳細的介紹了cs離子的4d內殼層電子激發組態4d ~ 95s ~ 25p ~ 5 、輻射末態4d ~ （ 10 ） 5s ~ 25p ~ 4及auger末態4d ~ （ 10 ） 5s ~ 25p ~ 3和4d ~ （ 10 ） 5s5p ~ 4的能級結構及各種可能的輻射和auger衰變過程，獲得了與已有的實驗結果和相關的半經驗準相對論組態相互作用計算結果相符的輻射躍遷能、振子強度以及線寬，預言了4d ~ 95s ~ 25p ~ 5態的以auger衰變為主的auger電子譜的特性。
  5. Discussing the equation oxidation - reduction reactions by ion - electron method

    電子法配平氧化還原反應方程式
  6. In view of its virtue of high degree of electron and ion generations, the microwave electron cyclotron resonance ( mwecr ) cvd method is expected to deposit device quality a - si : h at high deposition rate

    鑒于微波電子迴旋共振化學氣相沉積（ mwecrcvd ）系統具有電子和離子產生率高等優點，人們期望它能在較高的沉積速率下獲得器件級質量的a - si ： h薄膜。
  7. Three temperature equations include disconnected thermal conductivity coefficient and energy exchange terms between electron and ion, electron and photon, which are affected by the density an d temperature of the plasma, and by the atom parameter. implicit scheme have to be used to solve them. we use entirety linear iteration method to do this work

    三溫方程含有間斷的熱傳導系數，存在著電子與光子、電子與離子的能量交換，這些量與離子的密度、溫度和原子物理參數有關，對它們的求解必須採用隱式格式，我們採用整體線性化迭代格式迭代求解。
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