ion implantation annealing 中文意思是什麼

ion implantation annealing 解釋
離子注入後退火
  • ion : n. 【物理學】離子。 positive [negative] ion正[負]離子。
  • implantation : n. 1. 種植。2. 插入；灌輸，鼓吹。3. 【醫學】皮下注射。
  • annealing : 熱處理
  1. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  2. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。
  3. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
  4. An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions. thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6. 5 + 017cm - 2 and, subsequently, the high temperature annealing

    我們使用無質量分析器的離子注入機，模擬等離子體離子注入過程，成功地在該注入機上用水等離子體離子注入制備出了界面陡峭、平整，表層硅單晶質量好，埋層厚度均勻的薄型soi材料。
  5. In this paper, we used different doping means to prepare the mn - doped gaas material. firstly, we incorporated mn of different dose into gaas by ion implantation, including the couple - ion implantation with mn + and c, then performed rapid thermal annealing in different temperature. furthermore, we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion

    本論文利用不同摻雜方法進行了摻mngaas這種dms材料樣品的制備，首先利用離子注入法對砷化鎵（ gaas ）材料進行不同劑量的錳（ mn ~ + ）離子注入，其中包括加碳（ c ）的雙離子注入，然後在不同溫度下進行快速退火處理；此外還利用擴散法對gaas晶片進行不同mn擴散源（純mn 、及mnas ）的摻雜。
  6. Carbon plasma immersion ion implantation ( piii ) into the porous silicon has been studied for the first time, and obtained intense blue light. the effect of annealing temperature on the luminescence has been investigated and results show that the luminescence intensity of sample reaches maximum after annealed at 4000c

    首次研究了碳等離子體注入對多孔硅的改性，得到了強藍光發射，詳細研究了退火溫度對發光強度的影響，發現在400時達到最大值，並探討了相關的機理。
  7. At first, we investigated the photoluminescence characterization of theion - implanted samples by spectroanalysis, found that the ion implantation would damage the crystal lattice structure and affect the optical radiation of characteristic. moreover, the crystal lattice structure will be restored after annealing, which can be determined by the change of fluorescence peak intensity and blue migration of wavelength

    發現mn ~ +離子、 c離子的注入都會損傷樣品的晶格結構，從而影響樣品的發光特性，而退火處理對這些損傷有一定的修復作用，這可以從發光峰強度的變化及波長的藍移來判定。
  8. We also investigated the effect of c on the samples formed by ion implantation of mn and c. we studied the samples " crystal structure and surface appearance by x - ray diffraction and afm, experimental results revealed that with increasing the annealing temperature, the crystal lattice reformed and defect in the surface reduced gradually

    還進行了mn ~ + 、 c雙離子注入，研究了c對樣品性質的影響。利用x -射線衍射法和原子力顯微鏡對樣品的晶體結構和表面形貌進行了研究。發現隨著退火溫度的升高，樣品的晶格質量得以恢復；注入表面形成的晶格缺陷逐漸減少。
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