lightly doped 中文意思是什麼
lightly doped
解釋
輕摻雜-
The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi, while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )
普通直拉硅氧沉澱在低溫750形核,重摻as硅單晶形核溫度較高,在750 - 900之間。 -
The abrupt heterojunction diode is composed of a 1 m thick heavily doped n - type sic layer and a 0. 4 m thick lightly doped p - type sic1 - xgex layer with varied composition ratios
在這個異質結中, n型重摻雜3c - sic層的厚度為1 m , p型輕摻雜sicge層厚度為0 . 4 m ,二者之間形成突變異質結。 -
In the new structure, a n + buffer layer is introduced into the bulk silicon substrate with a triple - diffusion process. the new structure has two features : one is the feature of npt - igbt : the thin and lightly - doped p + layer and the high lifetimes of the carriers ; the other is the feature of pt - igbt : n7n + structure which can make the n " region very thin
新結構用三重擴散的方法在n ~ -單晶片上引入了n ~ +緩沖層,仍然保留了npt - igbt中薄而輕摻雜p層和高載流子壽命的本質優點,同時又具有pt - igbt中n ~ - ( n ~ + )雙層復合的薄耐壓層(即薄基區)的優點。 -
Investigation on optical properties of p - type lightly doped porous silicon
型輕摻多孔硅的發光特性研究
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