low-frequency transistor 中文意思是什麼

low-frequency transistor 解釋
低頻晶體管
  • low : adj 1 低的；淺的，矮的。 low flight 低飛。 a low temperature 低溫。 low tide [water] 低潮。 The g...
  • frequency : n. 1. 屢次，頻仍，頻繁。2. （脈搏等的）次數，出現率；頻度；【物理學】頻率，周率。
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  2. The key parts of barretter are made of irf840 field - effect transistor, the magnetic ring and high frequency choking coil which adopting negative temperature index. such components can provide barretters a wide applicable voltage 160v - 250v. low power consumption, minor temperature rise, stable functions, long life - span

    鎮流器核心元件採用irf840場效應三極體，磁環及高頻扼流圈採用負溫系數，這樣的元件選擇使整流器適用電壓范圍寬160v - 250v ，功耗低，溫升小，性能十分穩定，確保其擁有很長的壽命。
  3. To compare with transistor ( complete solid - state ) high - frequency linear power amplifier, there are some disadvantages : bad stability and reliability, low efficiency, high cost for operating, huge cabinet, heavy maintenance work load, low security for high - voltage electricity offering, and to ensure the continuance of tv program, the transmitter must be operating with main frame and spare frame

    它們與晶體管（全固態）高頻線性功率放大器相比，存在著穩定性及可靠性差、效率低、運行費用高、發射機體積大、日常維護工作量大、高壓供電不安全、必須採用主機和備機的運行方式來確保電視節目不停播等缺點。
  4. Compared with quasi - resonant, it can reduced transistor voltage stress and improved load range and stability in low frequency range. because of the structure of three - level, transistor voltage stress and filter can be reduced significantly

    與傳統的準諧振變換器相比，該變換器功率器件的電壓應力大大降低，在很窄的開關頻率變化范圍內實現寬負載范圍的軟開關。
  5. Detail specification for electronic components. case rated bipolar transistor for silicon pnp low - frequency amplification for type 3cd 507

    電子元器件詳細規范. 3cd507型硅pnp低頻放大管殼額定的雙極型晶體管
  6. Semiconductor discrete devices. detail specification for type 3dg135 silicon ultra high frequency low - power transistor

    半導體分立器件. 3dg135型硅超高頻小功率晶體管詳細規范
  7. Semiconductor discrete device. detail specification for silicon npn high - frequency low - power transistor of type 3dg120

    半導體分立器件. 3dg120型npn硅高頻小功率晶體管.詳細規范
  8. Semiconductor discrete device. detail specification for silicon npn high - frequency low - power transistor of type 3dg111

    半導體分立器件. 3dg111型npn硅高頻小功率晶體管.詳細規范
  9. Semiconductor discrete devices. detail specification for type 3dg144 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg144型npn硅高頻低噪聲小功率晶體管詳細規范
  10. Semiconductor discrete devices. detail specification for type 3dg143 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg143型npn硅高頻低噪聲小功率晶體管詳細規范
  11. Semiconductor discrete devices. detail specification for type 3dg142 npn silicon high - frequency low - noise low - power transistor

    半導體分立器件. 3dg142型npn硅高頻低噪聲小功率晶體管詳細規范
  12. Semiconductor discrte device. detail specification for silicon npn ultra - high frequency low - noise difference match transistor of type 3dg210

    半導體分立器件. 3dg210型npn硅超高頻低噪聲差分對晶體管.詳細規范
  13. Semiconductor discrete device. detail specification for silicon npn ultra - high frequency low - noise dual - difference match transistor of type 3dg213

    半導體分立器件. 3dg213型npn硅超高頻低噪聲雙差分對晶體管.詳細規范
  14. Detail specification for electronic components. case rated bipolar transistor for silicon npn low - frequency amplification for type 3dd 313

    電子元器件詳細規范. 3dd 313型硅npn低頻放大管殼額定的雙極型晶體管
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