mobility ratio 中文意思是什麼
mobility ratio
解釋
流動性比率-
By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier
實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。 -
The n type carrier was provided by interstitial zn atom, and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility. when zno thin film was annealed in the ar ambience, p conduction type was founded in the zno thin film which grew in oxygen enrichment condition. this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ), and p type carrier was from oi
在ar氣保護下，對富氧條件下生長的zno薄膜的退火后的霍爾測量中發現， zno薄膜呈現p型導電狀態，分析認為，這可能是由於富氧狀態下生長的zno薄膜中過量的o在ar氣保護下退火沒有逸出薄膜，反而進入了zno薄膜的間隙位置，成為正電中心，使zno薄膜呈現p型導電。 -
However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down
通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0 -
After measuring dark current, photocurrent and response to x pulse of gaas detector before and after 1. 7 mev electronic radiation, the response tune, fall time of trailing edge, full width of half maximum ( fwhm ), sensitivity, carrier life, mobility are researched and contrasted. the result shows that the response speed of detector, time resolution ratio and nonlinear of back edge of output signal have been improved greatly after electronic radiation. though sensitivity of the detector reduces, its measuring range can be widened
為了使探測器的性能得到進一步的提高，我們對其進行了電子輻照改性，並測量了本徵砷化鎵探測器和經過1 . 7mev電子輻照的探測器的暗電流、光電流及對x射線的脈沖響應，並對其響應時間，后沿下降時間，半高寬（ fwhm ） ，載流子壽命，靈敏度進行對比，研究，結果顯示經電子輻照后的探測器的性能得到了改善，使響應速度，分辯率進一步提高，並消除了探測器輸出信號后沿的非線性，雖靈敏度有所降低，反而使其測量范圍得以拓寬。 -
The intrinsic carrier concentration reduces when decreasing the v / iii ratio. the high quality of in0. 53gao. 47as can be obtained at the range of 10 - 30 seconds of exchange time between ashs and phs. when the thickness of the buffer layer between the inp substrate and ingaas epilayer is 0. 2 um the mobility becomes the maximum and the carrier concentration is the lowest
/比對外延層的表面形貌有較大影響，增大/比有利於提高材料的結晶質量；隨著/比增加，遷移率升高；本徵載流子濃度隨著/比減少而降低； ash _ 3和ph _ 3轉換時間在10秒到30秒之間可以獲得質量較好的ingaas外延層；在inp緩沖層厚度為0 . 2 m時遷移率達到最大，載流子濃度達到最低。 -
The conclusion is that under the neutron and 7 - ray synthetical irradiation environment of a reactor, ionization effects of neutron on the vlsi made with cmos technology are weak, and that the displacement effects of neutron induces the decreases of mobility ratio and density of charge carrier, which causes the decrease of the total static current, so it compensates the increase of the static current caused by the synthetical ionization effects of neutron and - ray
對試驗結果綜合分析得出：在反應堆的綜合輻照環境下，中子電離效應較弱，並且由於中子位移效應引起載流子遷移率降低和載流子濃度降低，使得總的靜態電流下降，從而抵消中子和射線綜合電離導致的靜態電流增長。 -
Experimental study on the effect of mobility ratio on the displacement efficiency of chemical flooding
潤濕性對採收率及相對滲透率的影響 -
The results show the excellent high - temperature properties and anisotropy of mobility. the ratio au ?. / p ~ in 6h - sic is about 5
模擬結果和實驗數據的對比說明了對6h - sic輸運特性的模擬是正確的。 -
It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet. and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states
明確指出碳化硅器件的反型層遷移率和實驗測定的場效應遷移率不能等同，並給出了以上二者的比值與界面態密度的定量關系。
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