molecular beam epitaxy 中文意思是什麼
molecular beam epitaxy
解釋
分子束磊晶成松-
Semiconductor superlattice distributed bragg reflector grown by molecular beam epitaxy
的分子束外延生長 -
Algan gan heterostructure field effect transistor materials grown by molecular beam epitaxy
生長的跨導為186 -
Molecular beam epitaxy, mbe
分子束磊晶 -
Based on laser molecular beam epitaxy, the strain behavior and the corresponding control technology in oxides heteroepitaxial system, especially in ferroelectric thin films with perovskite structure, was systematically studied by using in situ reflected - high - energy - electron - diffraction ( rheed ). some original and meaningful results were obtained. following aspects were included in this dissertation : the structure of thin films is analyzed by rheed
本論文基於激光分子束外延的基本原理，以高能電子反射為主要監測工具，對氧化物薄膜特別是鐵電氧化物薄膜異質外延過程中應變行為及其控制方法進行了系統的研究，並取得了一系列有意義的結果，主要包括以下內容:利用反射高能電子衍射（ rheed ）的信息對薄膜結構進行分析。 -
High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique. successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out
本文研究了在gaas和gap襯底上，本徵型和n型al摻雜zns基單晶薄膜的分子束外延生長，獲得了高質量的單晶外延薄膜。 -
A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy. the sige hbt
室溫下該晶體管的直流電流增益為30到50 ，基極開路下，收集極-發射極反向擊穿電壓 -
Main works and results include : ( 1 ). growth method of self - organized quantum dots was studied. high quality inas self - organized quantum dots were grown by mbe ( molecular beam epitaxy ) technique
本文開展的主要工作和結果有： （ 1 ）研究了自組織量子點的生長方法，利用分子束外延技術（ mbe ）生長出高質量的inas自組織量子點。 -
Fortunately, with the improvement in the material growth, gap1 - xnx alloys with nitrogen concentration as high as several percentage have been successfully grown by molecular beam epitaxy ( mbe ) or metalorganic vapor - phase epitaxy ( movpe ). more and more attentions have been paid to this alloy for its distinct property such as the giant band gap and effect, for this reason, gap1 - xnx alloys are usually called abnormal alloys
人們研究發現， gapn混晶具有一些獨特的光電性質，例如其帶隙不是gap和gan的線性內插值，而是存在著較大的帶隙降低和巨大的帶隙彎曲系數，因此gapn混晶又被稱為「反常」混晶，從而引起了人們越來越多的關注，並成為當前的一個研究熱點。 -
To study its properties and obtain high quality thin films, a variety of techniques have been used such as molecular beam epitaxy ( mbe ), metal organic chemical vapor deposition ( mocvd ), magnetron sputtering, pulsed laser deposition, to prepare zno thin films
為了獲得高質量的氧化鋅薄膜材料，人們已採用分子束外延，有機化學汽相沉積，脈沖激光沉積，磁控濺射等各種技術來制備氧化鋅薄膜材料。 -
Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer. the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ), scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )
本文採用分子束外延（ mbe ）方法在gaas （ 001 ）襯底上優化低溫緩沖層生長條件制備了異質外延insb薄膜，採用原子力顯微鏡（ afm ） 、掃描電鏡（ sem ）與x射線雙晶衍射（ dcxrd ）等方法研究了insb / gaas薄膜的表面形貌與結晶質量。 -
Sige simox ; 3. sige smart - cut and behavior of sige / si he terostructure implanted with hydrogen. sige film preparation : sige films were grown on silicon substrate using solid source molecular beam epitaxy ( ssmbe ), gas - solid source molecular beam epitaxy ( gsmbe ) and ultra high vacuum chemical vapor deposition ( uhvcvd ) technologies
Sige薄膜生長方面：在熟悉各種薄膜外延技術的基礎上，採用了近年來發展較為成熟的固態源分子束外延（ ssmbe ） 、氣-固態源分子束外延（ gsmbe ） 、超高真空化學氣相淀積（ uhvcvd ）三種sige薄膜外延技術，在硅（ 100 ）襯底上外延生長了sige薄膜。 -
The fabrication methods such as molecular - beam epitaxy and metal - organic chemical vapor deposition and experimental studies of their properties have been reported, and theoretical studies mainly concentrate on the impurity binding energy varying the size of the wire, the effect of the applied electric field or magnetic field, and photoionization of impurities
在實驗上已經用分子束外延和金屬有機化學汽相淀積等技術對其物理性質進行了廣泛的研究，而理論上的研究主要集中於研究量子線的尺寸對雜質束縛能的影響、外加電場或磁場的作用及雜質的光致電離效應。
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