mos technology 中文意思是什麼
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Xing su ( microelectronics and solid state electronics ) directed by prof. lin chenlu the fast development of information technology requires integrated circuit to be greater integrated, faster functioned, and lower power - consumed, that lead to continuous shrinkage of mos and dram feature size. and under this trend the thickness of mos gate dielectrics ( sio2 ) would soon scale down to its physical limit
日益增長的信息技術對更高集成度、高速、低功耗集成電路的需求，驅使晶體管的尺寸越來越小，隨之而來的問題是作為mos柵氧化物和dram電容介質的sio _ 2迅速減薄，直逼其物理極限。 -
This article is mainly about the sige hetrojunction mos device fabricated by soi technology
本論文主要介紹的是基於soi技術的sige異質結mos器件。 -
It is the only one compound semiconductor whose native oxide is sio2. therefore, the sic devices can be manufactured using the technology of the silicon processing, for example mos devices
Sic是唯一可以氧化生長成sio _ 2的化合物半導體材料，這使得它可以運用si平面工藝條件進行sic器件的製造，特別製作mos器件方面。 -
Spic ( smart power integrated circuit ) based on new power mos device develop rapidly along with the advancement of micro - electronics technology
隨著微電子技術的進步，以新型功率mos器件為基礎的智能功率集成電路（ spic ）得到了迅速發展。
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