mos transistor 中文意思是什麼

mos transistor 解釋
mos晶體管
  • mos : 不需要現場收音的無聲取景
  • transistor : n. 【無線電】晶體（三極）管；晶體管[半導體]收音機。 a transistor radio 晶體管[半導體]收音機。
  1. Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically

    在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
  2. Rapid screening test methods for thermal sensitive parameter of mos field effect transistor

    Mos場效應晶體管熱敏參數快速篩選試驗方法
  3. Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs141型硅n溝道mos耗盡型場效應晶體管詳細規范
  4. Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs140型硅n溝道mos耗盡型場效應晶體管.詳細規范
  5. After introduction of the tranlinear loop principal, the bjt current controlled conveyor has been designed by using mixed tranlinear loop voltage follower. as for modern integrated circuit, the model of mos transistor, the active resistance and the current mirror integrated circuit formed by mos transistor are introduced. the cmos current controlled conveyor has been derived from mixed tranlinear loop cmos voltage follower based on weak inversion operation

    針對現代集成電路的工藝，本文對mos晶體管的工作原理進行了簡要的敘述，討論了有源電阻和電流鏡的實現方法，並利用mos晶體管的亞閾值特性組成混合跨導線性迴路完成對應的電壓跟隨器的設計，推導出了基於cmos技術的電流控制傳送器。
  6. With the high development of the quantum circuits, the testability of the circuits will become a very serious problem. the method of testability design for rt circuits is proposed in the end of this paper, which has high testability and low hardware cost. only adding one extra mos transistor and two control ports, it can detect all open and short faults in rt circuits

    隨著量子電路的飛速發展，由於其本身所特有的高集成度特點，電路的測試必然會成為越來越嚴重的問題，因此論文在最後就電路中常見的開路、短路故障提出了rt電路的可測試性設計方法，並針對具體的mobile電路進行了可測試性設計， pspice模擬結果表明達到了可測試的目的。
  7. This paper chooses bsim3 ( berkeley short - channel igfet model ) the model to be extracted, which is for short channel mos field effect transistor specially. these works are presented in this paper. 1

    本論文選取目前業界佔主流地位的bsim3 （ berkeleyshort - channeligfetmodel ）為將要提取的模型，它是專門為短溝道mos場效應晶體管而開發的一種模型。
  8. In the fifth chapter, the performance of transconductor - capacitor ( gm - c ) continuous time filter is discussed. due to process variation and parasitics, an automatic tuning is designed for center frequency and quality factor q. also, in this chapter, a two order bandpass filter with tunable is designed. the effects on filter ' s performance of the non - idealities of a cmos ota are studied and the computer simulations at the mos transistor level are carried out

    第五章討論了跨導電容連續時間濾波器的性能特點，設計了一個中心頻率可調的二階帶通濾波器，為了使濾波器參數自動調整到設計標準值，從而保持其設計值的實現精度，論文給出了片內自校正（可調諧）環節。
  9. V groove mos transistor

    槽型柵金屬氧化物半導體晶體管
  10. Vertical mos transistor

    垂直型金屬氧化物半導體晶體管
  11. The paper gave detailed analysis of the structure working principle and characteristics of the bipolar junction mos transistor ( bjmosfet ), a novel semiconductor device. this new device has shared the advantages of bjt and mos

    詳細分析了一種新型半導體器件? ?雙極壓控場效應晶體管（ bjmosfet ）的結構特點、工作原理，這種器件擁有bjt和mos兩者的優點。
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