n-type material 中文意思是什麼

n-type material 解釋
型材料
  • n : 1. 【羅馬數字】90〈N＝90000〉。2. 【化學】＝nitrogen. 3. ＝North（ern）。N ＝nuclear 核的：N-waste 核廢料。
  • type : n 1 型，類型，（工業產品的）品種；風格，型式。2 典型，榜樣，樣本，樣板，模範，範本；典型人物；具...
  • material : adj 1 物質的（opp spiritual）。2 身體上的，肉體上的；物慾的，追求實利的；卑俗的。3 有形的，實體的...
  1. But because it is not spreading popularize and new type pipe in market emerge in an endless steam, the selling market is not standard, many pipe material has not standard temporary. how to choose suitable pipe materials that it is not only the ordinary use do n ' t know but also relevant design and construction technician can not know comprehension

    而且廠家生產與銷售市場又不夠規范，很多管材暫無設計規程與施工驗收規范。要想選用適用的管材，正確進行設計和施工，需要研究新型管材的耐熱、耐壓、膨脹和阻力損失等物理性能。
  2. Since the existed research has n ' t illuminated the failure form of post - embedded reinforcing steel bar bonding anchor and its mechanism, has n ' t systematic research on factors influencing the function of post - embedded reinforcing steel bar bonding anchor, and also failed to test on the long period validity of post - embedded reinforcing steel bar bonding anchor, it is very unfavorable for the spread and application of post - embedding technique. in the meantime, the fact that the present post - embedding anchoring material is of few kinds, high prices and still - to - be - improved performance has become the bottleneck of the post - embedding technique ' s development, which has restricted its further application and development. therefore, it is of great importance to develop a new type high - performance inorganic anchoring material with reasonable price and improved performance

    由於已有研究對后植鋼筋粘結錨固的失效形式、破壞機理未作出明確回答，對后植鋼筋粘結錨固性能的影響因素未進行系統研究，對后植鋼筋粘結錨固的長期有效性未予以試驗證實，不利於植筋技術這種新型結構加固技術的推廣應用，同時現有植筋錨固材料存在品種少、價格高、性能需要進一步改進和提高等局限性，已成為植筋技術發展的瓶頸，制約了植筋技術的進一步應用和發展，因此開發價格合理、性能優良的新型高性能無機質類錨固材料就顯得尤為重要和迫切。
  3. The partly gas stratum produce the water in the past logging interpretation method ca n ' t distinguish them easily. according to the logging and brothel logging shows and testing results, this thesis will utilize the cross - plot analysis technology to look for the qualification and quantity index of the containing water and gas by mutual comparison, triumphantly discern the containing gas and water quality in the store stratum ; using b - p network can recognize the reservoir ; the utilize the fuzzy cluster analysis technology to cluster analyze separately the water well section and water quality well in the store stratum, settle the type datum and central type distinctly and analyze fluidity ' s material quality and diversity in all models and others store stratum, triumphantly distinguish the diversity of the containing water and gas

    本次論文以鉆井錄井顯示和測試結果為依據，利用交會圖分析技術，相互對比尋找出區分含水與含氣的定性與定量指標，成功地對儲層含氣、水性質進行了識別；利用bp網路分析識別儲層類型，利用模糊聚類分析技術，將測試產水井段與產水井段數據分別作聚類分析，確定出各自的類數和類中心，建立起聚類模型，將所建模型對其它儲層段進行含流體性質及差異分析，成功地對含氣性差異進行了判別。
  4. With doped ni element, the material converted into n - type semiconductor, what ' s more it has very low seebeck coefficient which shows ni is + 4 in this material

    摻入一定量的ni后，轉變為n型半導體材料，它的seebeck系數非常小，表明ni在這個化合物中的表觀化學價的+ 4價。
  5. Then we grew the material with different active layer growth temperature, different v / ratio, different doping concentration and form. after that, we tested these materials by photoluminescence ( pl ) technology, and got the best growth condition according to the results of photoluminescence spectra. our result was that the active layer growth temperature was 700, v / ratio was 60, waveguide layer doping was gradual changed ( n - type doping with sih4 from 190sccm to 590sccm, p - type doping with dmzn from 90sccm to 490sccm )

    然後在不同的有源區生長溫度、 /比、摻雜方式及濃度情況下對激光器材料進行外延生長，並利用光熒光（ pl ）技術對不同生長條件下外延材料的光致發光特性進行了測試對比，結果表明在下列條件下生長出來的材料具有更好的光學和電學性能：有源區生長溫度在700 、波導層/比選擇為60 、 n型波導漸變摻雜190sccm - 590sccm的sih _ 4 、 p型波導漸變摻雜90sccm - 490sccm的dmzn 。
  6. Tio _ 2 has been known as an n - type metal oxide semiconductor and an important inorganic function material. it can be used in fabricating medium material, photocatalytic films, reducing reflect coat, gas sensor, etc. tio _ 2 films had excellent performance with photocatalysis, resisting photo erode, difficult dissolution in acidity condition, innocuity and stabilization in light and soon on

    Tio _ 2是n型金屬氧化物半導體，是一種重要的無機功能材料，可用於製作電介質材料、光催化薄膜、減反射塗層、氣敏傳感器等。 tio _ 2薄膜具有優異的光催化性能，抗光腐蝕，在酸性條件下難溶，對光穩定，無毒等。
  7. The results showed that the mg2si - based thermoelectric material doped with te and sb was still n - type, but that doped with ag changed into p - type

    結果表明：摻雜te 、 sb元素得到的mg _ 2si基熱電材料仍為n型半導體；摻雜ag元素得到的mg _ 2si基熱電材料轉變為p型半導體。
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