n-type semiconductor 中文意思是什麼

n-type semiconductor 解釋
n型半導體
  • n : 1. 【羅馬數字】90〈N＝90000〉。2. 【化學】＝nitrogen. 3. ＝North（ern）。N ＝nuclear 核的：N-waste 核廢料。
  • type : n 1 型，類型，（工業產品的）品種；風格，型式。2 典型，榜樣，樣本，樣板，模範，範本；典型人物；具...
  • semiconductor : n. 【物理學】半導體。
  1. A trend of photo - induced electron transition from p - type pc to n - type organic semiconductor was strongly supported by the data of sps and fisps measurements, the wire - like configuration of the tio2 tubule nanostructure benefited the electron - transport thereby improved the efficiency of the disassociation of the photogenerated carriers

    表面光電壓測試結果表明，復合材料中存在著強烈的從p -型酞菁材料到n -型氧化物半導體材料的光致電荷轉移。而且tio _ 2的納米管和線狀結構提高了電子的傳輸效率最為明顯，使光生電荷的分離得到顯著改善。
  2. When a metal is brought into contact with an n-type semiconductor, electrons will flew from the semi-conductor to the metal.

    使一塊金屬與n型半導體接觸時，電子將從半導體流到金屬。
  3. Studies on metal - semiconductor contacts of 6h - sic and some interrelated processes condensed - state physics postgraduate : wu ruibin director : gong min the manufacturing processes as well as electrical and thermal characters of 6h - sic ohmic contacts have been studied in this work. in addition, we fabricated au and ni schottky barrier diodes ( sbds ) on silicon surface of n - type 6h - sic

    本文討論了n型6h - sic歐姆接觸的制備工藝及其基本電學及熱學特性，並在此基礎上採用金屬au及ni在n型6h - sic硅面（ 0001晶向）上制備了具有一定特性的肖特基勢壘二極體。
  4. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs146

    半導體分立器件. cs146型硅n溝道耗盡型場效應晶體管.詳細規范
  5. Semiconductor discrete device. detail specification for type cs141 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs141型硅n溝道mos耗盡型場效應晶體管詳細規范
  6. Semiconductor discrete device. detail specification for type cs140 silicon n - channel mos deplition mode field - effect transistor

    半導體分立器件. cs140型硅n溝道mos耗盡型場效應晶體管.詳細規范
  7. Semiconductor discrete device. detail specification for type cs4091 cs4093 silicon n - channel deplition mode field - effect transistor

    半導體分立器件. cs4091 cs4093型硅n溝道耗盡型場效應晶體管詳細規范
  8. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs1 gp, gt and gct classes

    半導體分立器件gp gt和gct級cs1型硅n溝道耗盡型場效應晶體管.詳細規范
  9. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs4. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs4型硅n溝道耗盡型場效應晶體管.詳細規范
  10. Semiconductor discrete device. detail specification for silicon n - channel deplition mode field - effect transistor of type cs10. gp, gt and gct classes

    半導體分立器件gp gt和gct級cs10型硅n溝道耗盡型場效應晶體管.詳細規范
  11. The maximal power outputs of 37. 0 mw / cm2 and 30. 0 mw / cm2 for the p - and n - type laminated materials respectively at the temperature difference 490 have been experimentally obtained, which are about 2. 5 and 3. 0 times those of - fesi2. chemical analyses show that the interface failure between the bridge alloy and the semiconductor bi2te3 results mainly from the eutectic mixtures with low melting point and brittle compounds formed during welding and long time annealing at 190. it is found that the electrical properties of a laminated structure are mainly controlled by the wettability of the bridge alloy on the semiconductor surface

    發現： 1 ）疊層材料具有明顯優于均質材料的熱電性能，在490溫差下， p -型和n -型疊層材料的最大輸出功率分別達到37 . 0和30 . 0 （ mw / cm ~ 2 ） ，是同類型均質- fesi _ 2的2 . 5和3倍； 2 ）在焊接過程和190長時間退火處理過程中，焊接過渡層合金和基體半導體（特別是bi _ 2te _ 3 ）之間存在明顯的元素相互擴散，從而在過渡層中形成一些低熔點共晶體和脆性化合物，這是導致疊層材料破壞的主要原因； 3 ）焊接過渡層合金與半導體基體之間的潤濕性是影響界面層電性能的主要因素。
  12. The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter

    使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。
  13. Xrd reveals a mixture structure of the face - centered cubic and hexagonal close - packed phases. the sn doped makes the electrical conductivity change from insulator to n - type semiconductor

    用共蒸發法制備摻錫的c60薄膜，發現摻入的sn原子的薄膜導電性由原來的絕緣體變為n型半導體。
  14. Na - doped model shows the character of p - type semiconductor, and ni - doped model is n - type semiconductor

    摻na后材料具有p型半導體的特性，而摻ni后則具有n型半導體的特性。
  15. With doped ni element, the material converted into n - type semiconductor, what ' s more it has very low seebeck coefficient which shows ni is + 4 in this material

    摻入一定量的ni后，轉變為n型半導體材料，它的seebeck系數非常小，表明ni在這個化合物中的表觀化學價的+ 4價。
  16. Tem micrographies show that tioj nanoparticles are partly coated with the polymer. we alse study effect of pani film. finally a new organic polymer stk junction i s produced by using p - type polyaniline and n - type semiconductor

    最後，直接利用csa - pani濾液在導電玻璃上成膜做成器件，並對器件的性能進行了分析，這對于聚苯胺在在光電器件中應用具有指導意義。
  17. Tio _ 2 has been known as an n - type metal oxide semiconductor and an important inorganic function material. it can be used in fabricating medium material, photocatalytic films, reducing reflect coat, gas sensor, etc. tio _ 2 films had excellent performance with photocatalysis, resisting photo erode, difficult dissolution in acidity condition, innocuity and stabilization in light and soon on

    Tio _ 2是n型金屬氧化物半導體，是一種重要的無機功能材料，可用於製作電介質材料、光催化薄膜、減反射塗層、氣敏傳感器等。 tio _ 2薄膜具有優異的光催化性能，抗光腐蝕，在酸性條件下難溶，對光穩定，無毒等。
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