negative bias 中文意思是什麼
negative bias
解釋
負偏壓-
A study of attentional bias on heroin - related cues and negative - physical cues in heroin abstainers
海洛因戒除者對相關線索和負性生理線索的注意偏向 -
C ) we found that the negative bias or ion bombardment was important to the orientation variation of the films. low bias is helpful for the basal plane orientation, while under high bias the films shows that the c axis of bn was nearly parallel to the substrate
C ）偏壓或離子轟擊對取向有重要影響，低偏壓有利於形成基面對襯底平行的取向，而在高偏壓下，薄膜表現為c軸平行襯底的取向。 -
And these limit the diamond film application. in order to grow high quality diamond film, this experiment using cleanout and negative bias to improve nucleus
為了得到高質量的金剛石薄膜本研究對于石英玻璃的表面進行了清洗並用了負偏壓增強形核的方法。 -
As regards sk ( bias angle ) and kg ( kurtosis ) values, the fluvio - lacustrine facies or palaeosols increases considerably compared with the aeolian sands. the former displays positive bias and the latter often approximately symmetrical distribution with only a minority negative bias
就sk和kg變化而言，河湖相或古土壤值較之風成砂明顯增高，前者呈正偏，後者常常表現近對稱分佈，僅少數呈負偏。 -
Many commentators have suggested that the high levels of satisfaction are due to methodological weaknesses in the satisfaction survey : social desirability bias, reluctance to express a negative opinion, the wording of questions, response set bias and non - specific questions 44, 40, 25, 13
許多評論家曾經指出高度的滿意度源自於滿意度調查方法的缺失：社會化表達意願的偏差負面意見表達的遲疑問題的文字陳述回答題組的偏差和不夠具體的題目44 ， 40 ， 25 ， 13 。 -
In a ccp system, there is a discontiguous characteristic on tuned substrate self - bias. when the impedance between substrate and ground was made increasingly inductive, a large negative dc potential developed on the substrate
在ccp （ capacitivecouplingplasma ）中調諧基片偏壓具有不連續變化現象，當基片之間為漸增的感抗時，基片上會產生漸增的負偏壓。 -
The effect of electrostatic force of the drive voltage on the accelerometer had been researched when the bias voltage polarity is positive - negative configuration
前人在研究驅動信號對傳感器的靜電力效應時，用偏置電壓極性為正?負配置的驅動信號進行研究。 -
1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon
研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。 -
For the requirement of more negative differential resistance ( ndr ) routes, three split quantized energies are formed in the four - period inp / ingaas superlattice structure with relatively thin ingaas quantum wells under ideal flat - band condition, and high - field domain in the superlattice is formed under sufficiently large operation bias
為獲得?多軌跡的負微分電阻，本研究組件使用?相當薄之砷化銦鎵?子井，可使四周期磷化銦/砷化銦鎵超晶格結構在平帶情況下形成三個分?的?子化能階，且於足夠大的操作偏壓下在該超晶格結構中形成?高場區域。 -
Process parameters included rf power, substrate negative bias voltage, substrate temperature and working gas pressure
工藝參數有射頻功率、襯底負偏壓、襯底溫度和工作氣壓等。 -
At 200v of substrate negative bias voltage and 300w of rf power, the content of cubic phase in bn films reaches 92. 8 %
當負偏壓為200v ，功率為300w時，薄膜中立方相的含量達到92 . 8 。 -
For obtaining cbn thin films, it is necessary that substrate negative bias voltage is not lower than 90v and r. f power is not lower than 200w
若要得到立方氮化硼薄膜，負偏壓不能低於90v ，功率不能低於200w 。 -
Substrate negative bias voltage deeply impacts the nucleation and growth of cbn. there is a threshold value of bias voltage for depositing cbn
襯底負偏壓對立方氮化硼的成核和生長有十分重要的影響，存在偏壓閾值，低於該值不能產生立方氮化硼。 -
( 2 ) the distribution, flux and flowrate of the gases are exactly under control. in order to grow high - quality diamond film on si substrate, the quality of diamond film on a mirror - polished single - crystal si surface is examined experimentally, and the enhancement mechanisms of positive or negative bias on nuclear formation is interpreted theoretically
為了在si襯底上生長高質量的金剛石薄膜，對在鏡面拋光si表面上的成核進行了深入的實驗研究，對襯底偏壓（正、負）的增強成核作用給出了自己的解釋。 -
By changing the negative bias current density, gaseous ratio and total pressure, nanocrystalline diamond film is prepared by ion - assisted bombardment method at the substrate temperature of 700 ? 00 ? and mixture gaseous of ch4 and h2 the effect of growth parameters on the diamond film is studied. the diamond film presents very low compressive stress and excellent field emission character
採用離子輔助轟擊法，以ch _ 4 、 h _ 2為源氣，襯底溫度為700 900 ，通過改變襯底負偏壓、 h _ 2和ch _ 4氣體比例以及工作氣壓，制備出納米金剛石薄膜，並對工藝參數對金剛石薄膜沉積的影響進行了研究。 -
Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature
本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。 -
The induced formation and motion of copper steps on the surface of cu covered with glycine occur in the area where has been scanned by scanning tunneling microscope with higher negative bias voltage v
2 . 5v的條件下使用掃描隧道顯微鏡stm掃描吸附有甘氨酸的cu 111表面，在掃描區域內原有銅臺階的形狀發生了變化並產生了新的銅臺階。 -
This work using negative bias to improve the nucleus density, and quartz glass was used as a kind of depositional substrate and diamond was deposited upon it in an mpcvd equipment. the diamond coating was characterized by xrd sem rama xps. the experimental results show that the mostly component of the film is diamond, and the results show that the sic is exist. it show that the diamond film not grow directly on the quartz glass, there exist the sic transition layer
在mpcvd制備得到了金剛石薄膜之後，分別用x衍射（ xrd ） 、掃描電鏡（ sem ） 、拉曼譜（ raman ）和光電子能譜（ xps ）等測試手段對金剛石薄膜進行了表徵，結果表明了生長出來的薄膜的主要成分是金剛石，同時發現了sic的存在，這表明了用mpcvd在石英玻璃上生長金剛石薄膜時，不是直接生長在sio _ 2上，而是有一個過渡層sic ，然後在過渡層上再生長一層金剛石薄膜。 -
Undoped bn films exhibit a resistivity of 1. 8 x 10 " q cm and those of doped are 7. 3 x107 q cm. the influence of process parameters for doping studied, it showed that both s fountain temperature and substrate temperature impact the resistivity evidently. analyzed by xps and aes, s dopant concentration is made some difference with substrate negative bias voltage
研究了工藝參數對薄膜電阻率的影響，實驗表明硫源加熱溫度和襯底溫度對氮化硼薄膜的電阻率有明顯影響，直流負偏壓對薄膜的電阻率並沒有明顯影響， xps光電子能譜表明直流負偏壓對薄膜中的硫含量有一定影響。 -
The experimental evidences indicated that three deposition parameters, i. e., energy density of laser, rf plasma power and substrate negative bias played key roles in the growth of the c - bn films at room temperature. on this basis, the explanation of formation process and mechanism of c - bn film was given
通過分析各個沉積參數在薄膜生長中的作用，證明三個沉積參數：激光能量密度、射頻功率和基底負偏壓是室溫下生長立方氮化硼薄膜的關鍵因素，並在此基礎上初步解釋了立方氮化硼薄膜的形成過程及機理。
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