nucleation temperature 中文意思是什麼

nucleation temperature 解釋
成核溫度
  • nucleation : n. 【物、化】成核（現象）；晶核過程，核子作用；集結；人工降雨作用。
  • temperature : n. 1. 溫度，氣溫。2. 體溫。3. 〈口語〉發燒，高燒。
  1. E ) with the help of pecvd, we found that high substrate temperature is advantage to the basal plane orientation. higher temperature helps the particles absorbed on the substrate moved to the location of two - dimension nucleation rapidly

    E ）高溫有利於基面平行於襯底的取向，在高的生長溫度下吸附於襯底表面的沉積粒子能夠迅速遷移到二維核的位置，並使粒子有足夠能量調整位置。
  2. Various chemical strategies have been introduced to the system to affect the dynamics of reaction, and thus, to adjust the nucleation and growth process. by using appropriate complexing agents as controlling reagents and adjusting the reaction temperature, both morphologies ( nanorods and fractals ) and structural phases ( zinc blende or wurtzite structures ) of cdse nanocrystals can be easily controlled. a precipitate slow - release controlled method was designed in the synthesis of manganese selenides

    在化學調控合成思想的指導下，運用已取得的調控合成的成功經驗，利用mnseo3沉澱緩釋放出mn2 +源和硒源，在調節反應溫度的基礎上，于同一反應體系成功地合成了mnse2和mnse的立方體和球形微米晶，實現了產物組成和維度的調控，並對它們的磁行為進行了研究。
  3. Presently, the nucleation and growth mechanism of diamond has n ' t been known completely. thermodynamically, the nucleation and growth of diamond at low temperature and low pressure is still considered as a paralogism

    目前金剛石的熱力學成核及生長機理尚不完全清楚，金剛石在低溫低壓下的成核和生長，仍被認為是一種熱力學的「悖論」 。
  4. In the condition of high combustion temperature, coal minerals are first decomposed and gasified, and when plume is cooling, they can form lots of submicron particles though nucleation, condensation and agglomeration

    在燃燒的高溫條件下，煤中的礦物質首選經歷熱分解和氣化，當煙氣冷卻時，它們經過冷凝成核、凝結和團聚等作用，形成大量細粒子。
  5. The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi, while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )

    普通直拉硅氧沉澱在低溫750形核，重摻as硅單晶形核溫度較高，在750 - 900之間。
  6. Nano - sio2 acted as the nucleation agent in pp, and greatly upgrading the crystal temperature, nucleation rate and crystallinity when 1 % ~ 5 % nano - sio2 by weight was added

    在納米sio _ 2含量為1 5份時， pp的結晶溫度以及結晶速率隨著含量的增加而增加；結晶度隨著納米sio _ 2 ，粒子的含量先增加然後下降。
  7. Main content in simulation is the spatio - temporal evolution of the set of descriptive variables characterizing tectonic mineralization state under coupling of various processes as following : ( 1 ) variables related to forming and property of ore - forming fluid, such as dissolution rate of minerals ( include metal minerals ) in rock, concentration and saturation of aqueous species in fluid, temperature, pressure, and ionic strength etc. ; ( 2 ) variables related to structural deformation and fluid flow, such as stress, deformation rate, fracture network, porosity, fracture permeability ; ( 3 ) variables related to precipitation and mineralization, such as nucleation rate of gangue and metal minerals, accumulation precipitation of various minerals, etc. ; ( 4 ) spatio - temporal coupling relation of various variables above, such as the coupling relationship between spatio - temporal evolution of fracture permeability and flow and focus of fluid and ore - forming

    模擬的主要內容是在各種過程耦合作用下，以下描述構造成礦體系的主要變量的時空演化：與成礦流體的形成和性質有關的變量，如地層中礦物（包括成礦物質）的溶解速率、流體中各組分的濃度與飽和度、流體溫度、壓力、離子強度等；與構造變形和流體運移有關的各變量，如應力與變形速率、巖石孔隙度、構造（斷裂）滲透率等；與沉澱成礦有關的變量，如礦物（金屬礦物和脈石礦物）的成核速率、各礦物的沉澱量等；上述各有關變量間的時空耦合關系，如斷裂滲透率時空演化與流體流動、匯聚和成礦的耦合關系等。
  8. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明：隨著工作氣壓的減小，薄膜的晶粒尺寸有所減小；通過提高氫氣稀釋度，利用原子氫在成膜過程中起的刻蝕作用，可以穩定結晶相併去除雜相；選擇適當的熱絲距離能保證反應氣體充分分解，又使襯底具有較高的過冷度，是形成納米薄膜的重要條件；採用分步碳化法可以提高形核密度，有利於獲得高質量的納米- sic薄膜；襯底施加負偏壓可以明顯提高襯底表面的基團的活性，因負偏壓產生的離子轟擊還能造成高的表面缺陷密度，形成更多的形核位置。
  9. The paper works out the ice crystal spectrum distributing in the different macroscopic and micro - backgroud of the cloud ( ie, the thickness, the temperature and the supersaturation with respect to ice of the nucleation layer ). this paper also works out the amount of catalyst which is allowed in the cloud nucleation layer according to the different quantity of the supercooled water, the density of the supersaturation of the vapor with respect to ice. simultaneously, the paper discusses the i nfluence of remaining time when seeding artificial ice nucleus in the different ascending - velocity and altitude, and elicits the proper seeding altitude of the catalyst

    以此解為依據，得出了不同均流時，人工引入冰核在核化層存留時間，再以此時間作為人工冰核凝華增長時間，求出不同的雲宏微觀背景（如核化層厚度、溫度、冰面過飽和度等）下的冰晶譜分佈，經和實際資料比對符合相當好。進而求出核化層中不同過冷水量、冰面過飽和水汽密度下雲核化層可允許的催化用量。同時討論了不同升速，不同高度引入人工冰核時對其存留時間的影響。
  10. In this paper, concentrated sulfuric acid and titanium dioxide are used to prepare the tios04 solution that test later required under long time heat. the influences of reaction time and reaction temperature to yield of tioso4 are discussed. in the experiment of preparing tio2 powder, reaction temperature, ph values, material ratio, operation way, velocity of feed, calcining heat and time are researched by the principle of nucleation and growth in thermodynamics and kinetics

    在制備tio _ 2粉體實驗中，根據成核生長的熱力學和動力學原理，深入分析了沉澱反應時環境的溫度、 ph值、反應物配比、操作方式、加料速度等因素對ti （ oh ） _ 4粒度的影響，以及焙燒溫度和保溫時間等因素對制得的納米tio _ 2粉體性能的影響，得出了制備銳鈦型納米tio _ 2粉體的優化工藝條件。
  11. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  12. By studing the relationship of overheating temperature, overheating time and solution stability, the result shows overheating can decrease the number of molecule cluster and the probability of nucleation in the solution

    研究了不同過熱時間、過熱溫度對溶液穩定性的影響，說明過熱能夠降低溶液中離子簇的數量，能夠降低溶液成核結晶概率。
  13. The wxrd characterization showed that o - mmt possessed obvious nucleation effect on the crystallization process of b - pp. jeziorny and mo methods were used to study the non - isothermal crystallization process. the obtained value of kinetics parameters such as tp, n, zc, t1 / 2, a h, f ( t ), e showed that the o - mmt has nucleation effect in crystallization of pp and can increases the crystallization temperature of pp, quickens the crystall ization velocity, decreases the crystallization activation energy of pp but decreases the crystallization degree of pp at the same time

    運用jeziorny法和mo法研究了聚丙烯和復合材料的非等溫結晶過程，所得到的非等溫結晶過程動力學參數t _ p ， n ， z _ c ， t _ （ 1 / 2 ） ， h ， f （ t ） ， e的數值表明，有機蒙脫土的加入可以起到異相成核的作用，從而提高pp的結晶溫度，加快pp的結晶速率，降低pp的結晶活化能，但同時也會降低pp的結晶度。
  14. Through the competition of ionization equilibrium of zno22 - and precipitation reaction, the nucleation and growth process of znse have been adjusted, and monodispersed znse semiconductor hollow microspheres are obtained. these microspheres were found to form through aggregation of small znse nanocrystals sizes of which could be finely tuned by temperature control. a novel gas - liquid interface aggregation mechanism was proposed and this idea might be generalized in other systems

    以zno22 -陰離子提供鋅源，利用它在強堿性溶液中緩慢釋放出zn2 + ，並與se2 -之間的電荷排斥作用，成功地調節了反應動力學，獲得了尺寸和分散性都非常均勻的微米級znse空心球，並實現了空心球內部粒子尺寸的調控，提出了新穎的氣液界面團聚機理。
  15. Effect of nucleation temperature on properties of glass ceramics based on steel slag

    核化溫度對鋼渣玻璃陶瓷性能的影響
  16. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制，以控制沉積過程，減少金剛石膜生長過程中的缺陷，並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程；利用微波對材料的選擇加熱特性，通過構造等效方程，並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中，建立了非均勻等離子體溫度場綜合模型、復合介質基片材料的復合溫度場模型及復合介質材料溫度場攝動模型，為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備，並對基片加熱材料進行了設計和優選，以獲取大面積均勻的溫度場區，甚至獲得大於基片臺尺寸的均勻溫度區；作為研究重點之一，開展了微波等離體化學氣相沉積金剛石的成核與生長研究，系統地研究了在（ 100 ）單晶硅基片上mpcvd沉積金剛石膜的實驗過程中，基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對金剛石薄膜質量的影響，分別用raman光譜、 x射線衍射（ xrd ） 、掃描電鏡（ sem ） 、紅外透射光譜（ ir ） 、原子力顯微鏡（ afm ）對薄膜進行了表徵，確立了該系統上mpcvd金剛石膜的最佳的實驗工藝參數。
  17. The seemingly mcnt content in pt can be controlled by repeating the coatings of the film and increasing the mcnt doped concentration of the sol. the heterogeneous nucleation at the interface between mcnt and pt was induced by the doption of mcnt. the films which were calcined at 500 ? had formed perovskite and large crystal content, means that perovskite formed at the lower temperature, in conclusion, the crystalline ability of pt was improved by the doption of tb and mcnt

    納米碳管的引入，使得體系在納米碳管和pt之間的界面產生非均態核化，隨pt薄膜成核勢壘的降低，摻納米碳管的pt薄膜在較低溫度下即可形成鈣鈦礦相，在500的較低溫度，就可獲得結晶完整且己具有很大結晶量的薄膜。
  18. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  19. In the paper, the two - step approach, in which the deposition procedure was divided into two sections by decrease the substrate temperature or the bias voltage, was used in order to synthesize c - bn film by the conventional js - 450a rf system. the influence of process parameters for nucleation and growth of depositing c - bn was studied separately

    本論文使用傳統的js - 450a射頻濺射系統利用兩步法（降溫降偏壓法）沉積立方氮化硼薄膜，分別研究了各工藝參數對立方氮化硼成核和生長的影響。
  20. The experimental results show that : solution, nucleation and crystal growth are a continuous process. the induction effect is not apparent in the ethylene hydrate formation. the kinetic curves of ethylene in gaseous condition are very smooth with second nucleation happened in lower temperature and higher pressure

    實驗結果表明：乙烯水合物生成的溶解、成核、生長的進行是一連續的過程，誘導過程不明顯甚至消失；常規條件下的乙烯動力學為一光滑連續的曲線，在較低溫度和較高壓力下會有二次成核現象；近臨界條件下乙烯生成水合物頻繁出現二次成核現象；超臨界條件下的乙烯由於其特殊的性質而使生成動力學行為變得更加復雜。
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