ohmic contact 中文意思是什麼

ohmic contact 解釋
電阻性接觸
  • ohmic : adj. 1. 歐姆的。2. 以歐姆計算的。3. 使用歐姆定律的原理裝置的。
  • contact : n 1 接觸；聯系；交涉。2 〈美國〉（有勢力的）熟人；門路。3 【數學】相切；【電學】接觸；觸頭；觸點...
  1. Study of ohmic contact to gan hemt epilayers

    外延材料歐姆接觸的研究
  2. Base ohmic contact

    基極歐姆
  3. The main work includes three contents as followings : 1, the situation of ohmic contact about al electrode, ti / al electrode on n - gan in different annealing conditions are investigated

    主要工作如下： 1 、研究了al單層及ti al雙層電極與n型gan在不同退火條件下的歐姆接觸情況，並用挖補圓盤法計算出接觸電阻率。
  4. The epitaxial struture for ld is an ingaas / gaas / algaas ssqw grin sch structure and the width of the array bar ia 4mm. the low theshold current 2. 9a the output power 20w at 17. 5a have been achieved by sioi isolation, ohmic contact and facet coating processes. the central wavelength is 979nm. at the same time, model analyses on the structure of the ssqw ld and the fabrication processes have been made for further research

    激光器的生長結構採用ingaas / gaas / algaas分別限制應變單量阱線性緩變折射率波導結構，列陣條寬為4mm ，通過sio _ 2掩膜，歐姆接觸和腔面鍍膜等工藝，實現了閾值電流為2 . 9a ，驅動電流為17 . 5a時輸出功率為20w 。
  5. For the purposes to make cd1 - xznxte detector, ohmic contact materials of cd1 - xznxte crystal are selected and structure of electrode is designed. the processing of conducting film prepared by the magnetron sputtering is studied

    本研究主要開展了在cdznte晶體上歐姆接觸電極的設計選材和磁控濺射方法制備導電薄膜的工藝研究，為cdznte探測器的制備奠定工藝技術基礎。
  6. One of the most key technologies of preparing cd1 - xznxte detector is to make ohmic contact film electrode on cd1 - xznxte crystal ' s surface, and the main technology usually used is evaporation, but the cohesion of evaporated film is n ' t very firm

    制備cdznte探測器最關鍵的技術之一就是在cdznte表面制備出歐姆接觸薄膜電極。關于在cd _ （ 1 - x ） zn _ xte晶體表面制備接觸電極用導電薄膜，大都是採用蒸發鍍膜技術，膜層與cdznte晶體結合不很牢固。
  7. The results show that crystal inhomogeneities and suitable contacts are critical to the fabrication of high quality cdznte spectrometers. the modified growth technique is a new and promising method for growing highly pure and perfect cdznte single crystals. good quality ohmic contact detectors are achieved when gold or indiumare deposited as electrodes on polished and chemically etched surface

    結果表明：材料內部的缺陷和歐姆接觸是影響器件性能的兩個關鍵因素，採用改進的富鎘氣氛下坩鍋旋轉下降法生長的晶體具有較低的缺陷濃度，適合製作探測器，採用au 、 c可得到歐姆接觸。
  8. The primary investigation of this paper is the ohmic contact between metafs ' and gan. moreover, we have prepared photodetectors and schottky diodes based on gan

    本文的主要工作是對金屬與n型gan的歐姆接觸進行了研究，並在此基礎上制備了硅基gan上的紫外探測器和gan肖特基二極體。
  9. In this thesis, the basic characteristics of algan / gan heterojuntion have been analyzed. then fabrication of algan / gan hemt and current collapse are investigated. ti / al / ni / au ohmic contact to low doping gan film is studied

    本文以所制得hemt樣品為研究對象，在分析其異質結特性的基礎上，對電流崩塌效應機理作了探索性研究。
  10. On the base of the study on sige material physics characteristic, sige / si hetero - junction characteristic, we dissertate the advantage of sige / si hetero - junction power diodes and establish more accurately physical models and propose two novel kinds of fast and soft recovery p + ( sige ) - n - - n + hetero - junction power diodes : the one is p + ( sige ) - n " - n + diode with the multiplayer gradual changing doping concentration in the n - region, and the other is p + ( sige ) - n " - n + diode with ideal ohmic contact on the cathode interface

    本文針對sige材料的物理特性、 sige si異質結特性建立了準確的物理參數模型。在詳細論述了sige si異質結功率二極體良好特性的基礎上，提出了兩種快速軟恢復sige si功率二極體新結構： n ~ -區採用多層漸變摻雜和陰極側採用理想歐姆接觸。
  11. And we have built a system for testing the ohmic contact between metals and semiconductor materials

    獲得了比較低的歐姆接觸率，並建立和完善了一套關于歐姆接觸率測試的系統。
  12. 2 ^ algan - based sbd was made using ti / al and au as ohmic contact and schottky contact respectively

    2 、利用ti al雙層電極作歐姆接觸， au電極作肖特基接觸，製造出algan基肖特基二極體原型器件。
  13. The analysis of i - v characteristic and microstructure shows that the failure of device results from the gate sinking and ohmic contact degradation

    通過溫度斜坡試驗，對器件試驗前後的i - v特性的對比分析和微結構的分析表明，歐姆接觸退化和柵下沉共同導致了器件的失效。
  14. We ' ve focused on improving the gan - metal ohmic contact characters and achieved some encouraging results. in addition, we ' ve finished some researched work on msm uv detector

    在此基礎上，在藍寶石基和si基gan上製作了msm結構光導型探測器，並對msm探測器的結構進行了優化。
  15. At the same time, the rapid progress on devices requires better ohmic contact between metals and gan, for example, the short - wave ld requires specific contact resistivity lower than 10 - 4 cm2

    Gan材料與金屬歐姆接觸的性能對器件有著重要的影響。低阻歐姆接觸是gan基光電子器件所必需的。
  16. Up to date, it is still very hard to grow gan bulk crystals, so the heteroepitaxial growth of high quality gan thin films is the premise for the development of gan - based devices. at the same time, the rapid progress on devices requires better ohmic contact between metals and gan, so much more research work must be carried out at once

    由於gan體單晶難以制備，生長高質量的薄膜單晶材料是研究開發gan基器件的基本前提條件，同時器件的發展對電極的制備提出了更高的要求，因而研究金屬電極與gan的接觸成為必然。
  17. The main work in this thesis includes two contents as follow : 1 we have investigated the properties of ohmic contact between metal electrode ( al and ti / al electrode ) and n - gan dealed under different annealing conditions. by using xrd sims analytic methods and i - v measuremnet, we analysed the interface between metals and gan, and suggested that it is effect to decrease the value of the ohmic contact

    主要工作如下： 1 、研究了al單層及ti al雙層電極與n型si基gan和al _ 2o _ 3基gan在不同退火條件下的歐姆接觸情況，並用x射線衍射譜（ xrd ） ，二次離子質譜（ sims ）對界面固相反應進行了分析。
  18. Ohmic contacts on h2 - thermally - treated 6h - sic surface by evaporating aluminum without annealing have contact resistances of 8 10 - 3 - cm2 on room temperature and keep fairly good thermal stability under the temperature of 400. its ohmic properties do n ' t depend on the doping concentrations of the substrate, which enables us to form ohmic contacts on low dropped substrate especially on epitaxial layer

    通過氫氣處理6h - sic表面並鍍鋁后直接形成的歐姆接觸室溫比電阻率達到8 10 ~ （ - 3 ） ? cm ~ 2 ，溫度不超過400時該接觸具有較好的穩定性，其歐姆特性不依賴于襯底的摻雜濃度，是一種適宜在低摻雜襯底特別是sic外延片上制備歐姆接觸的有效方法。
  19. With both crt ' s and lcd ' s virtue, fed has a bright future in all kinds of pdf. in this thesis, a new type of field emission cathode was described, that is using simple technique to deposit commercial nano - diamond powder on ti substrates, bonding diamond and ti, and form ohmic - contact by proper high temperature to form cathodes

    本文介紹了一種器件結構和制備工藝簡單，易於實現大屏幕顯示，且適于批量生產的新型場發射陰極，即在金屬鈦襯底上均勻塗覆納米金剛石塗層，然後在高溫下退火處理實現兩者的牢固鍵合，並形成歐姆接觸。
分享友人
分享到 Line

分享到臉書