oxygen lattice 中文意思是什麼
oxygen lattice
解釋
氧晶格-
Selective oxidation of methane to synthesis gas using lattice oxygen from perovskite la0. 8sr0. 2feo3 catalyst
3中的晶格氧用於甲烷選擇氧化制取合成氣 -
The n type carrier was provided by interstitial zn atom, and zn / o ratio and crystalline quality of zno thin film effeted its hall mobility. when zno thin film was annealed in the ar ambience, p conduction type was founded in the zno thin film which grew in oxygen enrichment condition. this might be excess oxygen in zno thin film entered interstitial position of crystal lattice ( oi ), and p type carrier was from oi
在ar氣保護下，對富氧條件下生長的zno薄膜的退火后的霍爾測量中發現， zno薄膜呈現p型導電狀態，分析認為，這可能是由於富氧狀態下生長的zno薄膜中過量的o在ar氣保護下退火沒有逸出薄膜，反而進入了zno薄膜的間隙位置，成為正電中心，使zno薄膜呈現p型導電。 -
( 2 ) the oxygen - rich spinel material from sintering the precursor at low temperature changed into perfect spinel structure due to releasing the excess oxygen when raised the sintering temperature slowly, which caused the lattice expanded and at the same time the system energy lowered and the bonding energy raised, and tansformed into the stoichiometric limn2o4 at 700
（ 2 ）低溫燒結合成的材料為富氧型尖晶石材料，隨著溫度的升高，結構中多餘的氧逐漸釋放，系統能量降低，結合能增加，品格發生膨脹，樣品向完整的尖晶石結構逐漸過渡。 700得到的材料為化學量的limn _ 2o _ 4 。 -
The spontaneous reduction of ni3 + to ni2 + is considered to the actual origin of chemical instability of linio2 during storage. the corresponding oxidization of lattice oxygen o2 " to active oxygen species ( o -, o2 - ) is thought to the direct cause of formation of li2co3 and adsorption of h2o and co2 on the surface of stored materials
Linioz電極材料中自發的ni3 + * ni2 +還原過程被認為是其貯存期間性能變質的產生根源，與之相對應的氧負離子生成活性氧物種則是電極材料表面形成lizc03及其它吸附物種的直接原因，而空氣中的coz和hzo促進了整個氧化還原反應的進行。
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