photolithography 中文意思是什麼

photolithography 解釋
n. 名詞 照相平版印刷術。

  1. Analysis of nanometrology and atom photolithography

    納米計量與原子光刻技術分析
  2. Why not use photolithography to make nanostructures

    為什麼不使用光蝕刻法製造奈米結構？
  3. Recent progress in photolithography technology

    光刻技術及其新進展
  4. 1 photolithography : forming electrodes in the form required on the ito film

    1光刻：在ito表面形成要求形狀的電極。
  5. Alignment precision - displacement of patterns that occurs during the photolithography process

    套準精度-在光刻工藝中精的形圖移轉度。
  6. Various technical improvements have made it possible to push the limits of photolithography

    各種技術若能改進，便可推進光蝕刻法的極限。
  7. The beam division method in maskless laser interference photolithography can be divided into wave - front division and amplitude division

    摘要無掩模激光干涉光刻中的分束方法一般有波前分割和振幅分割。
  8. So it is urgent to develop the wavefront engineering, and find a new technology to improve the resolution in photolithography

    因此，有必要拓寬波前工程學的研究內容，發展光刻解析度增強新技術和新方法。
  9. Photolithography then reduces the size of the pattern in a process analogous to that used in a photographic darkroom [ see illustration on opposite page ]

    接著，光蝕刻法用一種類似照相暗房中進行的過程（見右頁圖） ，把圖案的尺寸縮小。
  10. The grating and reticle, which linewidth errors are less than 10 % nominal linewidth, are fabricated by ldw. for the first time metallic mesh film with area 200mm 200mm fabricated by using ldw photolithography and coating technology

    本文完成了直角坐標激光直寫光刻技術研究，開展了離焦激光直寫光刻的工藝研究，製作了光柵和網格分劃板，線寬誤差控制在10 %以內。
  11. When the two layers of sio2 with different refractive index are finished, the designed mask pattern is printed on the film by photolithography. after that, icp is performed for dry etching, then, the waveguide structures are obtained. at present, the rudimental graph of edg has been obtained

    兩層不同折射率的sio _ 2薄膜制備好之後，經過光刻、等離子體刻蝕（ icp ）的工藝步驟之後，形成了波導結構，初步製作出了器件的圖形。
  12. The technologies i explored consist of photolithography technology, lift - off lithography process, technology of growing silicon dioxide films using sol - gel coating technique, and fabrication of na + - k + ion - exchanged glass waveguide. in this thesis, the experiment principles were investigated and the experimental results were given and discussed

    本論文中具體研究的工藝內容有：光刻的工藝參數研究；剝離法光刻工藝的研究；用溶膠凝膠法制備二氧化硅膜； na ~ + - k ~ +離子交換玻璃波導的製作。
  13. In order to find the best fabrication control combination, this paper studied rework strategies to be applied in coordination with some commonly used dispatching rules at the photolithography stage

    本文討論在微影黃光區中幾種再加工策略，並與常用的派工法則配合，期找出最適的生產控制組合。
  14. The insertion loss of the iwtm was about 1. 5db / mirror. the offset between the waveguide and the mirror was responsible for the loss, which could be eliminated with a higher - resolution photolithography technology and more precise control of the etched mirror position

    實驗測得iwtm損耗約為1 . 5db鏡面，損耗主要來源於鏡面和波導間的水平移位，通過提高光刻精度和鏡面腐蝕位置的控制精度，可以使性能得到改善。
  15. At the same time, in order to maintain good fabrication quality, shorten the process time and meet the required due date, it is absolutely necessary to have good rework strategies for wafer rework so as to make up the wafer defects in the photolithography area

    為了顧及生產中在制品水平量、產品生?流程時間、產品交期等目標，必須要有良好的再加工策略處理晶圓的再加工。
  16. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  17. Due to the high costs of wafer materials and machines, it is feasible to apply rework to increase wafer yield at the photolithography stage

    摘要在晶圓製造中，由於晶圓的原料及機臺成本昂貴，為了能夠增加晶圓的良率，利用再加工的方式來補救不良的晶圓為可行的措施。
  18. A different approach, named " two step growth approach " has been applied to fabricate an 8x8 photodiode array in the first time. the micro - processing procedures of this photodiode array including standard photolithography, a number of metallisation, wet - chemical etching and sic2 deposition for insulation were developed in this study

    首次採用「兩步法」制備出了新穎的8 8zns肖特基光電二極體陣列，詳細研究並確定了制備該器件的標準光刻、金屬沉積、濕化學腐蝕、 sio _ 2絕緣層沉積等一系列微電子處理工藝。
  19. How to use the measured effective diffusion length and scanner illumination condition to demonstrate photolithography line width uniformity is introduced

    摘要介紹了如何通過測量得出的等效擴散長度和光刻機的照明條件來對任何光刻工藝的線寬均勻性進行評估。
  20. The most prevalent procedure is to use photolithography or electron - beam lithography to produce a pattern in a layer of photoresist on the surface of a silicon wafer

    最常用的步驟是用光蝕刻或電子束蝕刻法，在矽晶圓表面的光阻層上製作出圖案。
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