plasma balance 中文意思是什麼
plasma balance
解釋
等離子區平衡-
Ionization balance in corona of laser - produced gold plasma
金激光等離子體冕區電離態特性研究 -
Standard practice for measuring plasma arc gas enthalpy by energy balance
用能量平衡法測量等離子體電弧氣體焓的標準實施規程 -
In the eme model, the electron energy balance equation is taken into account and the transport coefficients are assumed to be the functions of the electron mean energy. in this paper, a software is programmed to simulate the discharge process of plasma display cell of coplanar - electrode type, the matrix - electrode type and the novel shadow - mask pdp according to the gas discharge mechanism and fluid simulation theory. the simulation results show that both lfa model and eme model can be used to investigate the discharge characteristics of the cell, but the eme model is preferred for its better coincidence with theories and experiments
在本文中，分別使用本地場近似的lfa （ localfieldapproximation ）流體模型和假設碰撞反應系數、傳輸系數和電子的平均能量相關的eme （ electronmeanenergy ）流體模型對pdp放電過程進行模擬，比較分析模擬結果，得出eme模型和lfa模型對放電的繁流、起輝放電、熄滅等過程的描述的基本趨向是大致相同的，而從模擬工作電壓與實際電壓的接近程度和放電效率角度比較， eme模型的模擬結果跟理論和實驗結果更為相符。 -
The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
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