poly silicon 中文意思是什麼

poly silicon 解釋
復晶硅
  • poly : n. 〈口語〉1. 工藝學校（＝polytechnical school）。2. 聚酯纖維（＝polyester fibre）。
  • silicon : n. ＝ silicium
  1. The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth

    用納米壓入法對（ 100 ）單晶硅及（ 110 ）單晶硅、多晶硅薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準氮化硅薄膜、低應力氮化硅薄膜、氮化鋁薄膜、氧化鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入過程中觀測到的兩個力學相的變化。
  2. Wirings of the poly layer are always utilized under the silicon grid technics. to control the macro - cell signal delay and improve signal integrality, the crossing among different nets must be averagely distributed to reduce the number of layer permutation. the metal layer wirings should be maximized and the length of poly layer wiring in each net should be minimized

    硅柵工藝晶體管級布線利用多晶層走線，為了控制宏單元時延性能及改善信號完整性形態，關鍵是不同線網間交叉的均衡分配以減少走線的換層次數，最大化金屬層走線以及每一線網多晶層走線長度的有效控制。
  3. Sinx thin film can improve the minor carrier lifetime of both mono and poly silicon by the simultaneous surface and bulk passivation

    9 ）的提高；先沉積氮化硅薄膜再氫等離子體處理能得到更好的鈍化效果。
  4. Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells, which cause the improvement of the absolute transfer efficiency about 0. 5 % ~ 2. 9 %. depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect. the thickness of sinx thin film will decrease and the refractive index will increase after annealing

    經過薄膜後退火處理發現，氮化硅薄膜經熱處理后厚度降低，折射率升高，但溫度達到1000oc時折射率急劇降低；沉積氨化硅薄膜后400oc退火可以促進氫擴散，提高鈍化效果；超過400oc后氫開始逸失，晶體硅材料中的少子壽命急劇下降； rtp （快速熱處理）處理所導致氫的逸失比常規退火處理顯著。
  5. Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug

    多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。
  6. The writer also elaborates the working principles of solar cell and various factors that may lead to bad conversion efficiency of solar cell, emphasizes on three thin film solar cells ( amorphous silicon thin film solar cell, poly silicon thin film solar cell, cuinsea thin film solar cell ), analyzes their structure, photovoltaic effect, producing techniques, and conversion efficiency etc., and discusses how to reduce the effects of sw in solar cell and how to improve the conversion efficiency

    闡述了太陽電池的工作原理，論述了影響太陽電池轉換效率的因素，並重點介紹了當前研究比較深入的三種熱點薄膜太陽電池：非晶硅薄膜太陽電池（ a - si ） ；多晶硅（ poly - si ）薄膜太陽電池：銅銦錫（ cis ）薄膜太陽電池。分析了它們的結構、光伏效應、制備工藝、轉換效率等，探討了如何減小太陽電池的光致衰退效應和提高薄膜太陽電池的轉換效率的方法。
  7. A flexible 8 - bit asynchronous microprocessor based on low - temperature poly - silicon tft technology

    技術的柔性8位異步微處理器
  8. It also points out that the higher electricity generating efficiency and lower cost will be obtained if polycrystalline silicon germanium ( poly - sige ) alloys is used as solar energy materials compared with polycrystalline silicon thin film ( poly - si )

    文章闡明用多晶鍺硅薄膜作為太陽能電池材料，能獲得比多晶硅薄膜太陽能電池更高的發電效率和更低的成本。
  9. Synthesis and characterization of poly aryl ether ether ketone ketone random copolymers containing silicon

    主鏈硅雜化聚芳醚醚酮酮的合成與表徵
  10. Defect generation distribution along the channel appears to be different in two cases. several common degradation phenomena were also summarized from some recent typical research work on the reliability of low - temperature processed poly - silicon thin film transistors

    文章還結合近幾年國際上對于低溫多晶硅薄膜晶體管器件可靠性開展的一些有代表性的研究工作，對一些常見的退化現象進行了綜述和比較。
  11. Optical and electrical properties of the composite of porous silicon and poly n - vinylcarbazole

    多孔硅與聚乙烯咔唑復合光電性能研究
分享友人
分享到 Line

分享到臉書