polycrystalline 中文意思是什麼

polycrystalline 解釋
多結晶體
  1. The cdte films doped te are deposited onto glass substrate by close spaced sublimation. the x - ray diffraction data indicate the pure cdte films are polycrystalline zinc - blende structure with grain orientation predominantly along ( 111 ) direction. the electrical properties of cdte films are investigated by hall effect measurement using the van der pauw method

    X射線衍射分析表明，純cdte薄膜是立方閃鋅礦結構， （ 111 ）晶面取向生長； hall效應實驗測量發現薄膜電阻很高，呈p型電導，面電阻率數量級達1010
  2. The tio2 colloidal particles are brookite nanocrystals, and the pss / ti02 films are polycrystalline films with relatively high hardness and can serve the function as reflection - enhancing coatings

    Pss tio _ 2薄膜為由板鈦礦tio _ 2納米晶所構成的多晶膜，硬度較高，具有增反作用。
  3. Hydrogenation of polycrystalline sige thin films by hot wire technique

    熱絲法氫處理多晶硅鍺薄膜
  4. In this thesis, mainly by fmr, combined with moke and magnetic measurement, systematical studies have been made on the magnetic properties, especially magnetic anisotropy in epitaxial single crystalline fe ultathin films on gaas and inas substrates in polycrystalline thin films and in polycrystalline nife and nifeco patterned films of micron and submicron rectangular elements arrays

    本論文以鐵磁共振為主要研究手段，輔助以磁性和磁光測量，對外延于gaas及inas上的不同厚度的單晶fe超薄膜、不同厚度的nife多晶薄膜和電子束光刻的多晶nife和nifeco單層利三明治結構的微米及亞微米矩形單元陣列圖形薄膜的磁性，特別是磁各向異性進行了較為系統的研究。
  5. Wear mechanism of polycrystalline cubic boron nitride tools

    刀具的磨損機理
  6. In this paper, the al3 + - doped zno thin films were prepared on na - ca - si glass substrate ( microscope slides ) by sol - gel process from 2 - methoxyethanol solution prepared by zinc acetate as premonitor, monoethanolamine as stabilizator and aluminum chloride reaction. homogenous, transparent, polycrystalline zno thin film was formed finally by diping coating conducted for film - plate on substrate, drying, pre - heat - treatment, anealing

    所用的溶膠是以乙二醇甲醚為溶劑，醋酸鋅為前驅體，乙醇胺為穩定劑反應制得，用浸漬提拉法在基體上鍍膜，經烘烤、預燒、退火，最後形成均勻、透明的多晶zno薄膜。
  7. Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress

    本文主要研究了典型尺寸的n型金屬誘導橫向結晶多晶硅薄膜晶體管在兩種常見的直流應力偏置下的退化現象:熱載流子退化和自加熱退化。
  8. Polycrystalline silicon - examination method - assessment of sandwiches on cross - section by chemical corrosion

    硅多晶斷面夾層化學腐蝕檢驗方法
  9. Suitable polycrystalline znsxse1 - x film with zinc sulfide cubic structure and ( 111 ) preferred orientation that provided a good matching with the requirements of lclv were deposited on ito coated glass by mbe method. room temperature photo - responsivity measurements performed on these thin films show that

    相比于用zns和se為生長源制備的znsxsel x薄膜，採用zns和znse化合物為源材料的實驗方法制備出的薄膜性能更優良，其晶粒尺寸普遍增大，柱狀晶形更完整。
  10. Owing to the extremely small dimensions, nanometer materials are structurally characterized by a large volume fraction of grain boundaries or interphase boundaries, which exhibit some unique structural characteristics and novel properties with respect to the conventional coarsegrained polycrystalline materials

    由於納米粉體材料尺度極小，使之表面原子數、表面能急劇增加，產生了宏觀物體所不具有的表面效應、小尺寸效應、量子效應及宏觀量子隧道效應等新的性能。
  11. Applications of grain boundary design in polycrystalline metals

    晶界設計在多晶體金屬材料中的應用
  12. One determines a directionally dependent property in a polycrystalline specimen.

    用多晶樣品來測量有方向性的特徵。
  13. Owing to its optoelectronic and chemical properties, cdte is an ideal absorber material for high - efficiency, lowcost polycrystalline thin film

    碲化鎘（ cdte ）具有良好的光電學性質和化學性質，因此成為制備高效率、低成本的多晶薄膜太陽電池理想的吸收層材料。
  14. We can classify thin films into four groups : thermal oxides, dielectric layers, polycrystalline silicon, and metal films

    我們可以把薄膜分成四組：熱氧化物，介電質層，多晶硅，金屬薄膜。
  15. The intention of the paper is to study the deposition and properties of znte ( znte : cu ) polycrystalline thin films and to apply znte ( znte : cu ) as a complex back contact layer between cdte and metal electrode to obtain ohm contact and high efficiency cdte solar cells

    本論文目的在於研究znte （ znte ： cu ）多晶薄膜的制備和性質，並把znte znte ： cu多晶薄膜作為復合背接觸層應用於cdte和背金屬電極之間以獲得歐姆接觸和高效cdte太陽電池。
  16. Moreover, by adjusting the technological parameters, polycrystalline diamond films grown preferentially along the different crystal orientations can be prepared

    而且通過調節工藝參數，可制備出沿不同晶向擇優生長的多晶金剛石薄膜。
  17. Polycrystalline diamond films with preferred orientation by adopting assisted - bias hfcvd technique are prepared, and the mechanisms of the nucleation and growth of the films are studied. in addition, application of the film to the heat sink of power electron device is discussed

    採用輔助偏壓熱絲cvd技術，制備擇優生長的多晶金剛石薄膜，研究了金剛石薄膜的成核及生長機理，並將其應用於功率電子器件的熱沉。
  18. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  19. Growth and characterization of undoped polycrystalline zno films

    熱蒸發分解法制備多晶氧化鋅薄膜以及性能分析
  20. 3. polycrystalline lif thin films were grown by thermal evaporation on amorphous substrates. properties of broad band photo - luminescence at room temperature of active channel ( f2 and fa + ) produced by electron beam irradiation were studied

    首次用熱蒸發法在玻璃襯底上制備了多晶lif薄膜平面波導，研究了由電子束照射產生的有源（ f _ 2和f _ 3 ~ +色心）溝道的室溫寬帶光致發光特性。
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