power magnetron 中文意思是什麼
power magnetron
解釋
大功率磁控管-
Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate
在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。 -
This thesis has studied some key hpm power combining technologies such as phase - locked source, high power phase shifter and high power combiner. according to the facts of hprl, it presents a combining project of relativistic magnetron with three output ports which acts as an phase - coherent hpm source. through theoretical computation and hfss simulation, we have designed the hpm dielectric phase shifter and waveguide - based combiner
對高功率微波功率合成的關鍵技術如鎖相源、高功率移相器、功率合成器進行了討論分析，結合實驗室實際情況，提出了以三埠輸出相對論磁控管作為相干高功率微波源進行高功率合成技術研究的方案。 -
In this paper, fluorocarbon films are deposited on polyetylene terephalate ( pet ) substrate by radio frequency magnetron sputtering polytetrefluoroethylene ( ptfe ) targets to examine the effect of discharge condition on the properties and mechanism of deposited films. the effect of the power, pressure and treating time on morphology is observed by means of scanning electron microscopy ( sem ) and atom force microscopy ( afm ). it is found that the fluorocarbon film particles distribute more uniform and join tightly with increasing power, the surfaces of films become closer and denser as pressure increases
利用掃描電鏡（ sem ）和原子力顯微鏡（ afm ）研究了成膜機理以及cf膜的表面形貌，觀察了不同功率、壓力和時間下對氟碳膜表面形貌的影響，系統研究了氟碳膜表面結構隨功率和壓力的變化規律，發現功率提高使得氟碳膜顆粒分佈均勻，結合更加緊密，而提高壓力，氟碳膜的顆粒更加密集，並且濺射條件不同，粒子的形態、粒子間構成的介觀結構也不相同。 -
Three kinds of different methods, namely anode oxidation, micro - arc oxidation and dc reactive magnetron sputtering, were employed to treat aluminum substrate which is used for power electronic devices in order to get an insulating surface by form a layer of aluminum nitride ( aln ) or aluminum oxide ( al2o3 ) film
本文分別採用陽極氧化法、微弧氧化法和磁控反應濺射沉積氮化鋁薄膜的方法對功率電子器件用金屬鋁基板表面進行絕緣化處理。 -
The type of photocatalytic reaction was first - degree reaction which was not very typical, and the reaction speed constants could be used to judge the efficiency of photocatalysis. the tio _ ( 2 ) films were prepared on glasses by magnetron sputtering. the influences on the tio _ ( 2 ) films properties of various o _ ( 2 ) partial pressure, various sputtering power, various heat treatment method and n was studied too
加入光催化劑tio _ 2粉末以後，光催化反應速率增幅較大，其過程可以認為是準一級反應，可以用一級反應速率常數來表徵光催化效率，降解甲基橙和甲基藍的反應速率常數分別為0 . 003min ~ （ - 1 ）和0 . 35min ~ （ - 1 ）左右。 -
2. fabricating uniphase fe _ 3o _ 4 film by dc magnetron sputtering, the influence of sputtering power, annealing temperature is discussed in detail and the optimum fabricating condition is found. 3. the influence of ta buffer introduced to fe _ 3o _ 4 film is investigated in detail
2 .研究以磁控反應濺射法制備單相成分的fe _ 3o _ 4薄膜時，濺射功率、晶化溫度對薄膜結構的影響，得到磁控反應濺射制備半金屬fe _ 3o _ 4的最優條件。 -
Interiorly, the uestc high power microwave laboratory has studied gyrotron since the late 1970s and reach advanced level internationally. magnetron injection gun ( mig ) provides the helical ring beam
在國內，電子科技大學高功率微波實驗室自70年代後期起，也對迴旋管進行了大量的研究工作，並達到國內外先進水平。
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