power semiconductor devices 中文意思是什麼

power semiconductor devices 解釋
功率半導體器件
  • power : n 1 力，力量；能力；體力，精力；（生理）機能；〈常 pl 〉才能。2 勢力，權力，權限；威力；政權；權...
  • semiconductor : n. 【物理學】半導體。
  • devices : 措施工藝裝備
  1. Firstly. operation principle of induction heating is introduced and the actuality of the power supply for induction heating is summarized. then, the scheme of structure of the power supply is established : uncontrolled rectifier and buck chopper constitute dc circuit. in this part, operation principle of a kind of soft switching buck chopper is presented mainly and the conclusion that the power semiconductor devices operate in soft switching is also illustrated by analysing the operation principle of all stages ; series resonant inverter is selected as inverter circuit via comparing the advantage and shortcoming of parallel resonant and series resonant. moreover. the work principle of series resonant inverter is analysed and the calculating method of the best dead time is put forward as well

    文中首先介紹了感應加熱電源的工作原理並綜述了國內外的研究現狀。接下來分析並制定了電源主電路的構成方案：在對比幾種功率調節方式的基礎上選擇了不控整流加斬波調壓作為直流部分。在這部分里，重點研究了一種軟開關buck變換器，通過分析各階段的工作原理說明了開關器件如何工作在軟開關狀態；對于逆變器部分，在比較了串、並聯逆變器優缺點的基礎上選擇了串聯諧振逆變器，並詳細分析了串聯逆變器的工作原理，提出了最佳死區的計算方法。
  2. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  3. Outline dimensions of extruded heat sink for power semiconductor devices

    電力半導體器件用型材散熱體.外形尺寸
  4. Connectors for power semiconductor devices

    電力半導體器件用接插件
  5. Due to good chemical stability and electrical resistivity, high thermal conductivity and mechanical intensity, wide band gap and low thermal expansion coefficient, aln thin films can be applied for insulating chips for semiconductor devices with high power, thermal dissipation lagers for large and super - large scale integrated circuits, insulating layers or passivation layers for semiconductor

    超薄鋁膜由於其特殊的的光學性質，在光學多層膜上有廣泛應用。氮化鋁薄膜化學穩定性高、熱傳導率高、機械強度高、電絕緣性能佳、高能隙、熱膨脹系數低，光學特性優良，可以用作大功率的紫外光學器件的散熱材料。
  6. Discrete semiconductor devices - metal - oxide semiconductor field - effect transistors mosfets for power switching applications

    半導體分立器件.電力開關設備的金屬氧化物半導體場效應晶體管
  7. Mosfets discrete semiconductor devices - part 8 - 4 : metal - oxide - semiconductor field - effect transistors mosfets for power switching applications

    半導體分立器件.第8 - 4部分:電力開關裝置用金屬氧化物半導體場效應晶體管
  8. Ceramic parts of case for power semiconductor devices

    電力半導體器件用管殼瓷件
  9. Is a hi - tech company specializing in developing and producing ceramic housing for high - power semiconductor devices. it s found in march 1992, located in yixing environmental protection industrial park. as a member of national electrical and electronics association, it obtained the iso - 9002 quality certificate in 2001

    十多年來，本廠在不斷擴大規模的同時，在技術上也不斷進行著改進，以高質量的產品而馳名中外，現在我廠已成為同行業中的佼佼者，是國家電力電子協會會員單位之一，且在2001年通過了iso - 9002質量管理體系認證。
  10. Molybdenum disk for power semiconductor devices

    電力半導體器件用鉬圓片
  11. Aeronautical static inverter ( asi ) is a kind of static converting device, which converts the dc ( 27v / 270v ) in the main power of aircraft into ac of constant - voltage and constant frequency by means of power semiconductor devices. with the development of the aircraft, all the electric equipment on the plane requires the power supply system with better performance

    航空靜止變流器（ asi ? aeronauticalstaticinverter ）是航空電源系統的二次電源，其作用是將飛機主電源直流電27v或270vdc變換成恆壓恆頻單相115v 400hz ，單相36v 400hz ，三相115v 200v ，或三相36v交流電，供飛機上負載使用。
  12. Aiming at the feature of cm interference in power converters, a new approach ? intrinsic dynamic nodes potential balance is proposed. by building node pair with balance potential and making use of the intrinsic stray capacitor of power semiconductor devices, the cm current can be suppressed effectively

    在對共模干擾建模的基礎上，提出了內在動態節點電位平衡的思想，其思路是通過在電路內部構造動態電位平衡節點對，並利用電路中功率器件固有的對地分佈電容使得電路中的共模干擾電流互相抵消，從而抑制功率變換器的共模emi 。
  13. Type designation for power semiconductor devices

    電力半導體器件.型號編制方法
  14. Components of gate terminal for power semiconductor devices

    電力半導體器件用門極組合件
  15. Tungsten disk for power semiconductor devices

    電力半導體器件用鎢圓片
  16. Discrete semiconductor devices - isolated power semiconductor devices

    半導體分立器件.孤立的電力半導體器件
  17. Discrete semiconductor devices - part 15 : isolated power semiconductor devices

    半導體分立器件.第15部分:絕緣電力半導體器件
  18. Discrete semiconductor devices - part 15 : isolated power semiconductor devices iec 60747 - 15 : 2003 ; german version en 60747 - 15 : 2004

    分立半導體器件.第15部分:獨立電力半導體器件
  19. Generic specification : discrete pressure contact power semiconductor devices qualification approval ; german version en 153000 : 1998

    總規范.分立的壓力觸點功率半導體裝置
  20. Harmonized system of quality assessment for electronic components - generic specification : discrete pressure contact power semiconductor devices qualification approval

    電子元器件質量評定協調體系.通用規范.分立壓力接觸電源半導體裝置
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