power semiconductor 中文意思是什麼

power semiconductor 解釋
功率半導體器件
  • power : n 1 力，力量；能力；體力，精力；（生理）機能；〈常 pl 〉才能。2 勢力，權力，權限；威力；政權；權...
  • semiconductor : n. 【物理學】半導體。
  1. Heat sink for power semiconductor device part 2 : measuring method of thermal resistance and input fluid - output fluid pressure difference

    電力半導體器件用散熱器第2部分：熱阻和流阻測試方法
  2. Selecting guide of heat sink for power semiconductor device

    電力半導體器件用散熱器選用導則
  3. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  4. Firstly. operation principle of induction heating is introduced and the actuality of the power supply for induction heating is summarized. then, the scheme of structure of the power supply is established : uncontrolled rectifier and buck chopper constitute dc circuit. in this part, operation principle of a kind of soft switching buck chopper is presented mainly and the conclusion that the power semiconductor devices operate in soft switching is also illustrated by analysing the operation principle of all stages ; series resonant inverter is selected as inverter circuit via comparing the advantage and shortcoming of parallel resonant and series resonant. moreover. the work principle of series resonant inverter is analysed and the calculating method of the best dead time is put forward as well

    文中首先介紹了感應加熱電源的工作原理並綜述了國內外的研究現狀。接下來分析並制定了電源主電路的構成方案：在對比幾種功率調節方式的基礎上選擇了不控整流加斬波調壓作為直流部分。在這部分里，重點研究了一種軟開關buck變換器，通過分析各階段的工作原理說明了開關器件如何工作在軟開關狀態；對于逆變器部分，在比較了串、並聯逆變器優缺點的基礎上選擇了串聯諧振逆變器，並詳細分析了串聯逆變器的工作原理，提出了最佳死區的計算方法。
  5. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  6. The housing device of this generic type for accommodating at least one circuit arrangement, in particular a power semiconductor module or the like, has housing areas which are designed for the arrangement of, in particular, live contact elements and which each provide a number of arrangement positions for this purpose

    這種通用普通類型的外殼器件至少用於裝填一個電路裝置，特別是電源半導體模塊或類似物，在該外殼器件中設計有外殼區域，該外殼區域尤其是用來放置帶電的接觸單元，並且其每個都提供有多個此類放置位置。
  7. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  8. Electrotechnical terminology. power semiconductor device

    電工術語電力半導體器件
  9. The restricted factor, hard switching of power semiconductor, has been introduced in the chapter two

    本文第二章介紹了制約逆變電源高頻化的主要因素?電力開關器件的硬開關工作狀態。
  10. Outline dimensions of extruded heat sink for power semiconductor devices

    電力半導體器件用型材散熱體.外形尺寸
  11. Heat sink for power semiconductor device part 1 : casting kind series

    電力半導體器件用散熱器第1部分：鑄造類系列
  12. Heat sink for power semiconductor device part 3 : insulators and fasteners

    電力半導體器件用散熱器第3部分：絕緣件和緊固件
  13. In order to increase the output power, reliability and stabilization, microchannel heatsink which is one of active heatsinks is used to cool high power semiconductor diode laser arrays in the paper

    為了提高激光器的輸出功率、可靠性和穩定性，本論文選取有源熱沉? ?微通道熱沉來冷卻大功率半導體激光器列陣。
  14. Abstract : igct is a kind of new ideal medium - voltage and high power semiconductor switching device. it has the advantages of high voltage, high current, low conducting loss, high switching frequency and easy sevies connection. therefore it is suitable for medium - voltage inverters with wide application prospects in the mine

    文摘: igct是一種新的理想的中壓大功率半導體開關器件，它具有高電壓、大電流、低導通損耗、高開關頻率、易於串聯優點，因此適用於中壓變頻，在煤礦具有廣泛的應用前景。
  15. Connectors for power semiconductor devices

    電力半導體器件用接插件
  16. Ceramic parts of case for power semiconductor devices

    電力半導體器件用管殼瓷件
  17. Selection guidance of case for power semiconductor device

    電力半導體器件用管殼選用導則
  18. Case for power semiconductor device

    電力半導體器件用管殼
  19. One of the key problems is lasers cooling in researching high power semiconductor diode laser arrays

    大功率半導體激光器列陣研製的關鍵問題之一就是散熱技術。
  20. The high efficiency and high power semiconductor laser with multi - active regions, which are cascaded by reverse biased tunnel junction ( s ) can resolve the problems in theory and overcome these shortcomings

    通過反向偏置隧道結將多個有源區再生耦合級聯起來的新型高效大功率半導體激光器從理論和實踐上解決了傳統激光器存在的上述問題。
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