quasi electron 中文意思是什麼

quasi electron 解釋
準束縛電子
  • quasi : adv 1 在某一意義上,有點,幾乎。2 恰如,宛如,就像是。3 就是說,即〈略作 q 或 qu 尤用以作語源上的...
  • electron : n. 【物理學】電子。 the electron beam 電子束。 the electron theory 電子(學)說。
  1. Collective excitation of quasi - one dimensional electron systems on liquid helium surface at a magnetic field

    磁場作用下液氦表面準一維電子氣體的激發
  2. The emphases of our research works are as follows : under ultra - low temperature ( about 0. 236k ) conditions, how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts

    研究的重點為,在甚低溫( 0 . 236k )下,通過實驗研究表面聲波的頻率和功率,源漏偏壓等因素對聲電電流的影響;研究準一維電子通道中不同源漏電流與分裂門負偏壓的關系,以找到分裂門的鉗斷點電壓;以及研究聲表面器件叉指換能器的頻率特性等。
  3. The energy level structures of the 4d core excited configuration 4d 5s25p5, final radiative configuration 4d105s25p4 and final auger configurations 4d105s25p3 and 4d105s15p4 of csv ion and all possible decay dynamics processes related to these configurations are all determined by mcdf method. we also compared the present results of radiative transition, oscillator strength and the line width with the results obtained by experimental spectra and the quasi - relativistic configuration interaction method and got a good agreement. we also make prediction for some dominant features of the auger electron spectrum emitted by the auger decay process of the 4d95s25p6 core excited states

    論文第三章中詳細的介紹了cs離子的4d內殼層電子激發組態4d ~ 95s ~ 25p ~ 5 、輻射末態4d ~ ( 10 ) 5s ~ 25p ~ 4及auger末態4d ~ ( 10 ) 5s ~ 25p ~ 3和4d ~ ( 10 ) 5s5p ~ 4的能級結構及各種可能的輻射和auger衰變過程,獲得了與已有的實驗結果和相關的半經驗準相對論組態相互作用計算結果相符的輻射躍遷能、振子強度以及線寬,預言了4d ~ 95s ~ 25p ~ 5態的以auger衰變為主的auger電子譜的特性。
  4. Analyses and researches the 2 channel voltage source ' s functional and characteristic requirements of the experiment system of the acoustic current transport model in the quasi - 1d electron channel. 2. designed and realized the hardware circuit of the 2 channel voltage source

    兩路高精度高穩定度饋源在進行準一維電子通道量子化聲電流輸運實驗的中得到了很好的使用效果,在國內首次觀察到了在甚低溫下準一維電子通道的電導量子化現象。
  5. The redox of v ( ) / v ( ), v ( ) / v ( ) couple on the graphite displayed one electron quasi - reversibility. it is proved that trace in3 +, sb3 + can inhibit cathodic hydrogen evolution during the charge process by increasing the hydro - gen overvoltage in addition that sb3 + is a stabilizing / kinetic enhancing ion. during the charge / discharge process, cross - mix and self - discharge rarely happened. the maximal energy density of the lab - level vanadium battery is 21 wh / kg. the capacity efficiency of the lab - level vanadium battery is as high as 94. 7 %

    釩電池充電末期,會發生水的電解反應,痕量銦離子的加入提高了析氫過電位,抑制了充電過程中負極氫氣的析出;銻離子的加入不僅可以抑制氫氣的析出,還提高了正極反應速率,增強了正極表面的穩定性。實驗中得到的最高質量比能量為21wh / kg ,充放電過程中僅有極少的交叉混合和自放電發生,自製釩電池的容量效率可高達94 . 7 %
  6. Based on schr ? dinger equation we obtain the vigorous result of phase - coherent electronic transport through a single interface in quasi - one - dimension electron waveguide

    本文研究了電子波導中單個雜質原子對電流分佈的影響,基於薛定諤方程,得到了電子在準一維電子波導中單個雜質所在界面處的精確的相位相干電子輸運圖像。
  7. First, the paper researchs the spice simulation of single electron transistor based on curve approach and quasi - analytical model of single electron transisor, and simulate characteristic of single electon transistor with matlab tool. secondly, the paper combine spice simulation program with master equation of single electron transistor, put forward novel spice simulation method of single electron transistor based on master equation, by choose master state of single electron transistor and build master equation of single electron transistor, afterward gain nonlinear cortrolled source of spice model of single electron transistor by solve the master equation of single electron transistor and simulate v - i characteristic of single electon transistor by spice program, it ’ s result prove the method is availability precision comparing with master equation method

    然後在此基礎上提出了基於主方程法單電子晶體管spice模擬新方法,本論文結合當前電路模擬軟體spice程序和單電子晶體管主方程模擬演算法,通過選擇單電子島電子數的主要狀態,建立單電子晶體管主方程,然後求解主方程,求得單電子晶體管spice等效模型的受控源的非線性函數,然後利用集成電路輔助分析軟體spice的abm (模擬行為建模)建立單電子晶體管( set ) spice等效模型,利用set的等效模型對單電子晶體管v - i特性進行模擬,實驗證明此方法與直接解主方程法相比具有一定的精度。
  8. Our final target is to measure and research the acoustic current which is produced by that saw carry the electron passing through the quasi - 1d electron channel at the cut off voltage of the quasi - 1d electron channel, so as to research the quantum acoustic current steps of the quasi - 1d electron channel

    最終目標是在準一維電子通道的鉗斷點測量和研究聲表面聲波搬運電子通過準一維電子通道的聲電電流,從而對準一維電子通道的聲電流量子化臺階現象進行研究。
  9. Larger growth pressure of buffer layer led to the dramatic increase of structural and optical quality of gan epilayer, and the improvement in quality was attributed to the transition of growth mode from 3d to quasi 2d, which was revealed by scanning electron microscope

    發現緩沖層的生長壓力變化對退火后緩沖層表面的狀態影響極大,增大緩沖層生長時的反應室壓力可以明顯提高外延gan的晶體質量和光學質量。通過sem分析,發現提高緩沖層生長壓力時,高溫gan生長明顯經歷了從三維生長到二維生長的過渡,晶體質量明顯提高。
  10. In this thesis, we study the nonlinear effects in electron - phonon interaction of one or quasi - one dimensional system with the nonlinearity of phonon ( lattice ). using the variational method and coherent method we study the ground state properties of one - dimensional molecular crystal and the soliton characteristics in protein molecular chain, respectively

    本文以較簡單的一維(或準一維)電子-聲子耦合系統為對象,在計入聲子(晶格)非線性的條件下,分別採用變分法和量子相干態方法研究了一維分子晶體基態的性質和蛋白質分子鏈中孤立子特性。
分享友人