radiation voltage 中文意思是什麼
radiation voltage
解釋
輻射電壓-
A solidstate photosensitive electron device whose current voltage charact eristic is a function of incident radiation
一種固態光敏電子器件，其電流電壓特性是入射光的函數。 -
Standard test method for separating an ionizing radiation - induced mosfet threshold voltage shift into components due to oxide trapped holes and interface states using the subthreshold current - voltage characteristics
利用亞閾值安伏特性測定由於氧化空穴和界面態產生的電離輻射感應金屬氧化物半導體場效應晶體管閾電壓偏移分量的標準試驗方法 -
Using the particle - in - cell ( pic ) model, a 8 millimeter relativistic backward wave oscillator underlying superradiance mechanism was gotten, the influence on both operation frequency and radiation efficiency of the guiding magnetic field, the diode voltage, the beam current and the beam radius as well as the corrugation structure were also presented
採用pic方法，通過數值模擬優化設計了超輻射狀態下的8毫米相對論返波振蕩器，分析了引導磁場、二極體電壓、電子束流、電子束半徑、周期慢波結構等對器件的輻射功率及輻射效率的影響。 -
As the microbolometer which is voltage biased express some characters different from other infrared detectors under the effect of electric heat and infrared radiation together, the computing method of parameters, such as responsivity, noise, noise equivalent temperature different ( netd ), noise equivalent power ( nep ), optical gain, detectivity and so on is given in this paper. some of these parameters are particular compared with other detectors, and some have difference between microbolometer and other detectors
由於微測輻射熱計在施加偏置電壓的情況下，電熱效應與紅外輻射的共同作用使它表現出與其他紅外探測器完全不同的一些特徵，文中給出了響應率、噪聲、噪聲等效功率、噪聲等效溫差、光學增益、探測率等參數的計算方法，這些參數中的部分是微測輻射熱計獨有的，或者與其他的紅外探測器的同一參數有所區別。 -
An analytical mosfet threshold voltage shift model due to radiation in the low - dose range has been developed for circuit simulations. experimental data in the literature shows that the model predictions are in good agreement. it is simple in functional form and hence computationally efficient. it can be used as a basic circuit simulation tool for analysing mosfet exposed to a nuclear environment up to about 1mrad. in accordance with common believe, radiation induced absolute change of threshold voltage was found to be larger in irradiated pmos devices. however, if the radiation sensitivity is defined in the way we did it, the results indicated nmos rather than pmos devices are more sensitive, especially at low doses. this is important from the standpoint of their possible application in dosimetry
該模型物理意義明確，參數提取方便，適合於低輻照總劑量條件下的mos器件與電路的模擬。並進一步討論了mosfet的輻照敏感性。結果表明，盡管pmos較之nmos因輻照引起的閾值電壓漂移的絕對量更大，但從mosfet閾值電壓漂移量的擺幅這一角度來看，在低劑量輻照條件下nmos較之pmos顯得對輻照更為敏感。 -
Interrupters used in power switchgear, x - radiation limits for ac high - voltage power vacuum
電力開關用交流高壓電力真空斷路器的x射線輻射極限 -
Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。 -
Piezoelectric elements were bonded on the plate as actuators and the input voltage of each actuator was determined by the velocity of its position and volume velocity of the plate was made zero, through which the sound radiation from the plate could be controlled
在簡支薄板表面粘貼壓電片作為致動器，根據所處位置的速度確定輸入控制電壓，並使平板的體積速度為零，從而達到控制聲輻射的目的。 -
A linear theory of rbwo with inner - slot coaxial structure is analyzed detailedly, and the equation of dispersive relation is deduced and computered numerically. 4. particle simulation is used in rbwo respective with coaxial and partial structure. in the simulation, the output parameters of rbwo such as phasespace, contour, vector, voltage, current, output power, interaction efficiency and microwave radiation
4 .對同軸和偏心返波管分別進行了粒子模擬，通過改變電壓、電流、電子注位置、磁場等參數來觀察返波管加了內開槽前後相位空間、等位線、矢量、電壓、電流、輸出功率、工作頻率的變化。 -
The optical effect on the uniformity of mesfet threshold voltage is studied. results show that optical radiation enhances the drain - source current of the gaas mesfet, and makes the threshold voltage to move toward negative direction. optical radiation enhances the uniformity of mesfet threshold voltage
本文研究了光照對閾值電壓均勻性的影響，觀察到在光照條件下，耗盡型mesfet的溝道電流增加，閾值電壓向負方向增加，光照提高了閾值電壓的均勻性。 -
Determination of long - term radiation ageing in polymers - procedures for in - service monitoring of low - voltage cable materials
聚合物長期輻射老化的測定.低壓電纜材料使用的監控程序 -
Long - term radiation ageing in polymers - part 3 : procedures for in - service monitoring of low - voltage cable materials
高聚物長期輻射老化的測定.第3部分:低壓電纜材料的使用中監測過程 -
Thanks to the support of the national natural science foundation of china under grand no. 50277036 for " the pulse electromagnetic fields and system - level em radiation of electric vehicles ", this thesis concentrated on the design of the variable voltage and variable frequency ( vvvf ) system and the development of a genetic algorithm for vector optimal design problems. the work includes mainly four parts : a brief introduction of the frequency - converter, the emc design of the vvvf system and the national standard of the electromagnetic interference of the vvvf system, the study of global search optimization algorithms, and an improved genetic algorithm called emigration genetic algorithm for multi - objective optimal problems
在國家自然科學基金資助項目《電動汽車脈沖電磁場與系統級輻射的研究》的工作基礎上，本文對電動車電磁輻射關鍵部分? ?變頻調速系統的電磁兼容性設計以及在電磁兼容性設計中涉及到的電磁系統的多目標優化方法進行了系統的分析和研究，其核心內容包括：變頻器工作原理；變頻調速系統電磁兼容性設計及變頻調速系統電磁兼容標準；隨機類全局優化演算法研究；提出了一種改進的遺傳演算法命名為遷徙遺傳演算法。 -
Mosfet ; radiation effects ; threshold voltage shift ; radiation sensitivity
Mosfet閾值電壓漂移輻照效應輻照敏感性 -
At the same time, in order to increase the gain of the radiation aperture, a new way to enlarge the waveguide radius is presented. and a gigawatt level of averaged output power with quasi - single tmoi mode is obtained at 3. 9ghz under the diode voltage of 550kv and the beam current of 23ka
同時，為增大輻射口增益，提出了一種增大波導管半徑的方法，並且在二極體電壓為550kv 、束流為23ka的條件下，模擬獲得了平均功率達gw量級，頻率為3 . 9ghz的準tm _ （ 01 ）模式的微波輸出。 -
Technical regulations on environmental impact assessment of electromagnetic radiation produced by 500kv ultrahigh voltage transmission and transfer power engineering
500kv超高壓送變電工程電磁輻射環境影響評價技術規范 -
The research shows that the radiation curves of thermoluminescence are different in different geochemical landscape. the direct problems of different shape of ore body have been did. in natural voltage respect, it has tested the stable property of the equipment, and showed the equipment of making by ourselves has good stable property
用電流場模擬鈾礦形成的自然電場進行了正演計算，研究了球狀礦體、水平板狀礦體、傾斜板狀礦體、卷狀礦體等不同形態礦體產生的自然電位的特徵，這些特徵比較客觀地反映了實際情況，為下一步自然電位的反演研究奠定了理論基礎。 -
It has many advantages including excellent device isolation function, less parasitic effects among different parts, high speed, good radiation toleration, and high integration density, etc. consequently, high voltage soi spic has become a new field of power integrated circuit research
它具有器件隔離性能好、器件間的寄生效應小、電路工作速度高、抗輻射能力強和集成度高等優點。因此基於soi的高壓智能功率集成電路已經成為功率集成電路研究的新領域。 -
Simulating threshold voltage shift of mos devices due to radiation in the low - dose range
低劑量輻照條件下的mosfet因輻照導致的閾值電壓漂移的模擬 -
The laser induced thermoelectric voltage effect had been found in lcmo and ybco thin films grown on tilted substrates due to heating by laser radiation
傾斜襯底上生長的lcmo及ybco薄膜具有激光感生電壓效應。
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