schottky contact 中文意思是什麼

schottky contact 解釋
肖特基接觸
  • schottky : 朔特基
  • contact : n 1 接觸;聯系;交涉。2 〈美國〉(有勢力的)熟人;門路。3 【數學】相切;【電學】接觸;觸頭;觸點...
  1. Schottky barrier diode is a kind of majority carrier device, using the contact barrier formed between metal and semiconductor to work. it has the advantages of low turn - on voltage and high response frequency, compared with pn junction diodes

    肖特基二極體是利用金屬與半導體之間接觸勢壘進行工作的一種多數載流子器件,與普通的pn結二極體相比,它具有正向導通電壓低,響應速度快等優良特性。
  2. Based on this model, it was presented that how to select the thickness of epilayer, the doping concentration of epilayer, schottky contact, the width of pn grid, the depth of pn junction and the doping concentration of pn junction for the trade - off between forward and reverse characteristics

    基於此模型,提出在對正反向特性進行折衷時,如何選擇合適的外延層摻雜濃度和厚度、肖特基接觸和pn結網格寬度、 pn結深度和摻雜濃度。
  3. The primary investigation of this paper is the ohmic contact between metafs ' and gan. moreover, we have prepared photodetectors and schottky diodes based on gan

    本文的主要工作是對金屬與n型gan的歐姆接觸進行了研究,並在此基礎上制備了硅基gan上的紫外探測器和gan肖特基二極體。
  4. Schottky barrier diode ( sbd ) is based on the rectification characteristics of metal - semiconductor contact

    肖特基勢壘二極體是利用金屬半導體的整流接觸特性而製成的二極體。
  5. The contact resistance reduces to the minimum level of 6. 6 10 - 6. cm2 after annealing for 1min at 900 ; the deposition of ni / au on algan is demonstrated for a good schottky contact performance, the leakage current is at a low level of 10 - 8a

    首先,極化效應是iii - n化合物異于其他iii - v化合物的最大特徵,因此對algan / gan異質結極化效應進行了分析。
  6. In this thesis, we aimed our research at metal - c _ ( 60 ) fullerene schottky barrier contact, which is the typical structure of c _ ( 60 ) diodes. the research work involves both scientific aspect and fabrication technics

    在論文的最後,採用c _ ( 60 )二極體構成lechner有源矩陣模式並對其進行了模擬,研究了其特性,期望能夠採用此二極體構成lechner二端子am - lcd ,從而大大降低am - lcd的生產成本。
  7. 2 ^ algan - based sbd was made using ti / al and au as ohmic contact and schottky contact respectively

    2 、利用ti al雙層電極作歐姆接觸, au電極作肖特基接觸,製造出algan基肖特基二極體原型器件。
  8. B ) a set of device fabrication technology was developed to realize zno sbd. obvious rectifying characteristic was obtained using pt as schottky contact electrode with zno

    B )探索適合zno肖特基二極體的製作工藝,選用pt作肖特基電極研製肖特基二極體原型器件。
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