self-bias circuit 中文意思是什麼

self-bias circuit 解釋
自偏壓電路
  • self : n (pl selves )1 自己;自身;本身;【哲學】自我;我。2 本性;本質。3 私利;私心,私慾。4 〈俗〉...
  • bias : n 1 成見,先入之見,偏執,偏見 (opp Impartiality ); 傾向,嗜好;癖 (towards)。2 (衣服等上面...
  • circuit : n 1 (某一范圍的)周邊一圈;巡迴,周遊;巡迴路線[區域];迂路。2 巡迴審判(區);巡迴律師會。3 【...
  1. Experimental results show that the bistable of tuned substrate self - bias was determined by discharge gas pressure, discharge power and tuning circuit parameters etc. the bistable exists is because of there is capacitive coupling in icp system and sheath capacitance is nonlinear

    實驗結果表明這種跳變回滯現象與等離子體的放電氣壓、射頻功率以及調諧外電路的參數等多種因素密切相聯系。而產生跳變回滯現象的原因是icp中存在容性耦合以及鞘層電容具有非線性特性。
  2. On the one hand, the design uses low voltage cascode op framework to improve its gain ; on the other hand, it applies self - bias and cascode structure to the whole sensing circuit. by using the improved method, we have successfully obtained low power consumption, low offset, high linear and high psrr ptat current generator under low power supply

    在電路設計上一方面改進運放結構,採用低壓共源共柵結構以提高其增益,另一方面整體傳感電路採用自偏置結構和共源共柵電流鏡結構,在低電源電壓下成功設計了低功耗、低失調、高線性度和高電源電壓抑制比的ptat電流產生電路。
  3. A novel self - bias high - voltage device structure for the start - up circuit of an off - line switching model power supply ic is described

    摘要設計了一種新的用於離線式集成開關電源啟動電路的自偏置高壓器件結構。
  4. The traditional bandgap reference circuit was improved in the design, which includes the applying of self - bias structure and cascode structure, output of the opamp was used as self - bias voltage, saving bias circuit, and then it was helpful to get low power consumption. through using poly resistance of high value with low temperature coefficient, we reduced the influnce to circuit, if power supply did not change, we must decrease operating current to decrease power consumption, and increasing value of resistor could decrease the operating current efficiently. poly resistance of high value had large value of squared resistor, so we could save layout area

    對傳統帶隙基準電路進行了改進設計,採用自偏置結構和鏡像電流鏡結構,利用運放的輸出電壓作為運放的偏置電壓,節省了偏置電路,降低了功耗;使用低溫度系數的多晶硅高值電阻,降低了電阻溫漂對電路的影響;在電源電壓不變的情況下,為了減小功耗就必須減小工作電流,而增大電阻的阻值能有效地減小工作電流,多晶硅高值電阻的方塊電阻很大,可以節省版圖面積。
  5. Our research group first developed tuned substrate experiment in an icp system. a lc resonance circuit was connected to the substrate, and it is found that there were bistable, jumped delay phenomena in substrate self - bias

    我們研究小組首次在icp ( inductivecouplingplasma )中進行了射頻調諧基片偏壓實驗,並且觀察到基片偏壓的雙穩、跳變回滯現象。
分享友人