silicon diode 中文意思是什麼

silicon diode 解釋
硅二極體
  1. Taking the silicon diode as an example, through an analysis of the diode ' s current - voltage characters and the avometer circuit, the writer finds out the reasons for the differences in the amount when measuring the positive direct current equivalent resistance with different ohm grades

    摘要以硅二極體為例，從二極體的伏安特性及萬用表內部電路的角度，分析了用指針式萬用表的不同歐姆檔位測量二極體的正向直流等效電阻時，其值緣何不同。
  2. The electron multiplier detector is appropriate to do ordinary detect works for its high sensitive and semiconductor photodiode ( such as silicon diode ) is appropriate to act as transfer standard detect for its high stability

    倍增器的靈敏度非常高，適合日常的測量工作；半導體型光電二極體（如si二極體）的穩定性好，適合作傳遞標準探測器。
  3. Semiconductor discrete device. detail specification for silicon tuning varactor diode for type 2cc51e

    半導體分立器件. 2cc51e型硅電調變容二極體詳細規范
  4. A silicon - based photo - diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging

    在同一襯底上製作了基於同一工藝的光電二極體與接收機電路，以消除混合集成引入的寄生影響。
  5. Detail specification for silicon avalanche rectifier diode

    硅雪崩整流器二極體詳細規范
  6. Strange features of nano crystalline silicon diode

    納米硅二極體的獨特性能
  7. Back - biased silicon diode

    反向偏壓硅二極體
  8. The pin silicon photodiode made by alice - china group, which has a large area and high performances, is an important part of the photon spectrometer ( pros ) pbwo4 detector read - out system on the alice experiment. the pin diode has a sensitive area of 16x17 mm2. its leakage current is lower than 5na at room temperature

    本工作研製的pin硅光電二極體的靈敏區面積為16x17mm2 ，常溫漏電流小於5na ，紫光區量子效率約為83 % ，結電容為110 - 120pf ，以及由pin光電二極體與電荷靈敏前置放大器組成的讀出系統的噪聲水平在- 25下小於527個等效噪聲電荷，並經過了長期性能穩定性的考驗
  9. This paper introduces a new method to measure the intensity distribution of single seam diffraction by replacing the silicon photocell and light activated diode with light activated triode

    摘要利用光敏三極體代替硅光電池和光敏二極體來測試單縫和雙縫衍射的光強分佈。
  10. Mainly for capacitance, semiconductor, jingzhen, resistance, ic chips, jiechajian procedures, connecting pieces, switching devices, silicon, triode, diode, piezoelectric ceramic base films, tubes, electron tubes, electronic stamping, precision metal parts, production processes between cleansing processes

    晶元接插件連接件轉接器矽片三極體二極體壓電陶瓷基片顯象管電真空器件等內精密電子沖壓五金零件，生產加工過程工序間的清洗。
  11. Semiconductor discrete device. detail specification for type 2dv8cp silicon microwave detector diode

    半導體分立器件. 2dv8cp型硅微波檢波二極體詳細規范
  12. Detail specification for silicon coaxial resistive switching diode

    硅同軸電阻開關二極體詳細規范
  13. Measurement of spatial uniformity of responsivety of silicon diode

    硅光電探測器空間響應均勻性測量的一種新方法
  14. Semiconductor discrete device. detail specification for type 2ck82 silicon switching diode

    半導體分立器件. 2ck82型硅開關二極體詳細規范
  15. Semiconductor discrete device. detail specification for type 2ck85 silicon switching diode

    半導體分立器件. 2ck85型硅開關二極體詳細規范
  16. Semiconductor discrete device. detail specification for silicon switching diode for type 2ck76

    半導體分立器件. 2ck76型硅開關二極體詳細規范
  17. Semiconductor discrete device. detail specification for silicon switching diode for type 2ck105

    半導體分立器件. 2ck105型硅開關二極體詳細規范
  18. Semiconductor discrete device. detail specification for silicon switching diode for type 2ck4148

    半導體分立器件. 2ck4148型硅開關二極體詳細規范
  19. Semiconductor discrete device. detail specification for silicon rectifier diode for type 2cz101

    半導體分立器件. 2cz101型硅開關整流二極體詳細規范
  20. Semiconductor discrete device. detail specification for silicon swicth - rectifier diode for type 2cz73

    半導體分立器件. 2cz73型硅開關整流二極體詳細規范
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