sputtering target 中文意思是什麼

sputtering target 解釋
濺射靶
  • sputtering : 飛濺
  • target : n 靶子，標的；目標；（嘲笑等的）對象；笑柄 （for）; （儲蓄，貿易等的）定額，指標；小羊的頸胸肉；...
  1. Magnetron sputtering target source and sputtering procedure

    磁控濺射靶源設計及濺射工藝研究
  2. Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature

    第一、應用穩定的直流磁控濺射設備制備tio2減反射薄膜並通過n & kanalyzer1200薄膜光學分析儀、 x射線衍射分析（ xrd ） 、掃描電子顯微鏡（ sem ） 、 alpha - step500型臺階儀等儀器對薄膜進行表徵，分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對薄膜性能結構的影響。
  3. Ge - sio2thin films were prepared by an rf co - sputtering technique on p - si substrates from a ge - sio2 composite target. the as - deposited films were annealed in the temperature range of 300 - 1000 under nitrogen ambience. the structure of films was evaluated by x - ray diffraction ( xrd ), x - ray photoernission spectroscopy ( xps )

    當溫度較低時（沉積時的基片溫度ts 450 ，后處理退火溫度ta 800時，制備的樣品均為非晶結構，當溫度較高時（ ts 450 ， ta 800 ）薄膜樣品中才出現si的結晶顆粒。
  4. In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere

    我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜，即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜，分別對它們的結構、光吸收以及發光性質進行了研究。
  5. Zno thin films were deposited on silicon ( si ) and glass substrate by reactive radio frequency sputtering ( rf ) technique with zinc target in the mixed gas of ar ando2, and used zno buffer improving the quality of zno thin film. the effects of parameters on the thickness, composition, texture, morphology, optical properties and electrical properties of zno thin films had been systematically investigated by means of xrd, xps, sem, afm, pl and hall test system

    採用x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、掃描電子顯微鏡（ sem ） 、原子力顯微鏡（ afm ） ，光致發光譜（ pl ）和霍爾效應測試技術系統研究了濺射工藝和退火工藝對zno薄膜的厚度、成分、織構、表面形貌、光學性能和電學性能的影響規律。
  6. Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system, with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )

    使用射頻濺射（ rf ）系統，靶材為燒結的六角氮化硼（ hbn ） ，工作氣體為氬氣（或氬氣和氮氣的混合氣） ，在硅襯底上沉積氮化硼薄膜。
  7. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  8. In this dissertation, a special shape cylindrical target of ybco is designed and sintered for the inverted cylindrical dc sputtering ( icds ) device. then, the thickness distribution of the 3 inch size thin films has been simulated

    本文針對3英寸ybco高溫超導雙面薄膜的制備技術，研究了靶材燒制、薄膜膜厚分佈、加熱器設計與製作，制備出了具有87k超導性的3英寸ybco雙面薄膜樣品。
  9. Magnetron sputtering is common method for preparating metal film resistor. by this method, the target is very important for the performance of the resistor

    在金屬膜電阻器的生產過程中，靶材是非常關鍵的，它制約著金屬膜電阻器的精度、可靠性、電阻溫度系數等性能。
  10. The results of simulations are : i ) energies of the incident ions to the target are determined mainly by the voltage across the cathode sheath, with a majority of ions " energy vary around the sheath voltage ; ions nearly normally bombard the target ; ions mainly locate above the sputtering holes because of the influence of the magnetic field, and the incident ions mainly come from the region ; the ions undergo several collisions during transportation, but that do n ' t matter much

    主要模擬結果有： ? ）入射離子到達靶面時的能量主要受到了射頻輝光放電中陰極殼層西北工業大學碩士學位論文李陽平電壓的影響，大部分離子的入射能量在陰極殼層電壓值附近，離子濺射時接近於垂直入射;射頻輝光放電受到陰極磁場的影響，等離子體中的離子主要集中在靶面濺射坑的上方，且入射離子主要來自這個區域;入射離子在輸運過程中和背景氣體分子有少量的碰撞，但影響不太大。
  11. Uniform and compact plzt and sno _ 2 ceramic targets, which diameter were 212mm and 221mm, respectively, had been successfully fabricated. ( 2 ) a rotating magnetic field rf magnetron sputtering system had been designed and set up, which showed high utilization efficiency of target, high films uniformity, and high deposition rate, etc. ( 3 ) the plzt and sno _ 2 thin films were investigated by afm, xrd, sem, and spectral photometer. the optimized processing parameters of preparing these films had been found

    並以此為基礎分別制備了緻密、均勻、平整、直徑為212mm的plzt和221mm的sno _ 2陶瓷濺射靶材; （ 2 ）為克服現有磁控濺射設備的不足，提出了一種新的磁控濺射方案，採用該方案的設備具有:靶材利用率高、鍍膜均勻、成膜速度快等特點; （ 3 ）運用afm 、 xrd 、 sem以及雙光路分光光度計等分析手段對plzt和sno _ 2薄膜的微結構和性能進行研究，找到了制備plzt電光薄膜和sno2透明電極材料的最佳工藝條件。
  12. In this article, by rf sputtering the licoo _ 2 film was produced. by hot pressing and cold pressing ( and sintering ), the licoo _ 2 targets used in the rf sputtering were produced differently. both technics of the preparation of the licoo _ 2 film and the licoo _ 2 target were studied

    本文使用熱壓燒結方法和冷壓后燒結方法制備了磁控濺射用的licoo _ 2靶材，並使用磁控濺射方法制備了licoo _ 2薄膜，對兩者的制備工藝進行了研究。
  13. While adding 1 % binder the preferable target was produced, and the density was 4. 89g. cm - 3, which was 88 % of the theoretic density of the licoo _ 2 with ar as the sputtering gas, the technics of rf sputtering to produce the licoo _ 2 film were studied systematically

    在冷壓燒結方法制備licoo _ 2靶材的過程中，燒結前添加了不同量粘結劑，就綜合純度和粘結性能兩方面考慮，加入1 %的粘結劑較為理想。所制備的licoo _ 2靶材密度為4 . 89g / cm3 ，達到licoo _ 2理論密度的88 % 。
  14. The process of sputtering resistance by woodceramics target was studied. the experiments proved that the film series could be used for a long time, with stability performance and could be used in farinfrared heating field

    研究了木質陶瓷鑲嵌靶鍍覆的電阻膜系的工藝，試驗表明該膜系可長時間使用，性能穩定，而且可以用於遠紅外加熱領域。
  15. In order to find a new way to prepare antibacterial fibers, photocatalytic oxidation of titanium dioxide ( tio2 ) has been used to modify the surface property of polymers in our experiment. tio2 films are deposited on polyethylene terephthalate ( pet ) substrates by means of rf magnetron sputtering using pure ti ( 99. 99 % ) as the target and ar mixed with o2 as reactive gas

    本文利用磁控反應濺射技術，以高純度鈦（ ti ）為靶材，氧氣為活性氣體，在pet基底上反應濺射沉積tio _ 2 ，將納米tio _ 2的光催化氧化特性應用於高聚物表面改性，為進一步開發抗菌織物打下基礎。首次在高分子pet基底上濺射沉積了氧化鈦薄膜。
  16. In the work, mid - frequency pulse magnetron sputtering is used to prepare znoral thin films used as the back reflector of the thin silicon films solar cells. the best techological condition was obtained by optimizing the preparing conditions, ( var is decided by the deposition rate, target voltage : 265v, gas pressure : 0. 6pa, the high base vacuum is expected

    本文採用中頻脈沖磁控濺射法，通過優化zno ： al薄膜的制備工藝，如靶電壓、本底真空度、工作氣壓、襯底溫度、 o _ 2 ar ，得到可用於硅薄膜太陽能電池背電極的zno ： al薄膜。
  17. In order to fabricate excellent electro - optic materials, this paper focused on the choice of electro - optic materials, the fabrication of ceramics target, developing new rf magnetron sputtering system, and the preparation of the electro - optic film, etc. the following results were obtained

    本文圍繞制備性能優異的電光材料，從電光材料的選擇、材料配比、靶材制備、射頻磁控濺射鍍膜設備的研製、電光薄膜材料製作等方面進行了研究。
  18. Magnetron sputtering target plating machine

    磁控平面靶鍍膜機系列
  19. Standard practice for ultrasonic c - scan bond evaluation of sputtering target - backing plate assemblies

    濺射目標墊板部件的超聲波c掃描粘結評定標準規程
  20. Meanwhile a new method was developed to prepare vo2 thin film directly from v2o5 powder. pressed v2o5 powder of 99. 7 % purity was used as sputtering target by argon ion beam

    發展了一種用離子束增強沉積從v _ 2o _ 5粉末制備vo _ 2薄膜的新方法。
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