sputtering technology 中文意思是什麼

sputtering technology 解釋
濺射工藝
  1. Excellent results have been obtained by using dc magnetron sputtering technology. a solar absorptance of 0. 94 - 0. 96 with an emittance of 0. 04 - 0. 06 at 100 has been achieved

    磁控濺射技術的準確結果顯示這種真空管在100時能夠達到吸收率: 0 . 94 - 0 . 96
  2. This paper mainly discusses the designing and testing method to the dds acousto - optic mode locking. it also makes some further analysis on the critical technology - - - - - - the transducer acoustical membrane matching and transducer thinning, which can directly affect the performance of acousto - optic elements. it then analyses the heat effect of acousto - optic elements and the technology of transducer thinning by developing ion - beam sputtering of high frequency acousto - optic elements

    本文重點討論了dds聲光鎖模器的設計及測試方法,討論和分析了影響聲光器件性能的關鍵工藝換能器聲學膜層匹配和換能器減薄工藝,對聲光器件的熱效應進行了測試分析,對離子刻蝕法聲光換能器減薄新工藝作了一定的探討。
  3. Upon comprehensively reviews of the predecessors ? results, using the experience of other countries for reference, and implementing thin film technology, the author have developed the microsensor in this thesis by sputtering metal material on a silex substrate

    本文在綜合評述前人工作成果的基礎上,借鑒國外的製作和研究經驗,利用薄膜技術,在石英基片上濺射銅、鎳和二氧化硅薄膜,形成薄膜熱流計。
  4. In the process of sputtering, it is important to characterize the thickness and residual stress of plct films. in experiment. through the technology of x - ray

    基於掠入射x射線衍射( gixrd )的殘余應力測量表明,射頻磁控濺射plct薄膜中為壓應力。
  5. Secondly, we have studied the properties of the conbzr high frequency soft - magnetic thin film, and use the dc magnetron sputtering system by conquering the key technology to fabricate double - sides thin - film inductors on 10mm * 10mm printed circuit board and 20mm * 20mm ceramic board

    再次,研究了薄膜電感所使用的conbzr高頻軟磁薄膜材料的性能,並利用真空磁控濺射設備,克服各種關鍵技術及工藝難度,在10mm 10mm的pcb板、 20mm 20mm陶瓷基片上製作了薄膜電感。
  6. By the essential control of the initial stage of - material growth, the high - quality crystal films can be obtained. by using mocvd technology, studies of some kinds of methods such as hydrogen - terminated, nitridation, plasma - assisted, growth of two stages and sputtering buffer layers have been conducted. by measuring of xrd, pl, sem and tem, and analysis of spectra of xrd, raman scatting, oa, and pl at different temperatures, we observed that the crystal quality has been improved markedly

    本文利用mocvd技術,採用各種對si襯底處理的方法,如氫終止法、氮化法、等離子體轟擊方法、兩步生長法、濺射緩沖層法等進行了試驗與研究,通過x射線衍射技術( xrd ) 、光致發光技術( pl ) 、掃描電子顯微術( sem ) 、透射電子顯微術( tem )等檢測,並對其x射線衍射光譜、拉譜光譜、吸收光譜及不同溫度下的光致發光光譜分析,發現外延晶體的生長質量得到了明顯提高。
  7. This thesis detailedly discussed die preparation of zrn films with microware - ecr plasma enhanced magnetron sputtering deposition ( mw - ecrpemsd ) technology

    本文探討了制備zrn薄膜的微波- ecr等離子體增強非平衡磁控濺射沉積工藝。
  8. In this paper, tio2 films as ecological self - clean glass material prepared by magnetron sputtering method were discussed in the following aspects : the preparation technology of tio2 films by magnetron sputtering method, the control of the surface microstructure, the effect of the surface microstructure on the photocatalytic activity and the optical performance of tio2 films. sem was used to observe the surface topography. xrd was used to explore the crystal form, and crystal size

    為了解決以往溶膠?凝膠法制備的tio _ 2薄膜膜層質量不好的缺點,本論文對磁控濺射法在玻璃表面制備tio _ 2薄膜作為生態自潔凈玻璃材料進行了一系列探索與應用基礎研究,包括tio _ 2薄膜的磁控濺射法制備工藝、表面微觀結構的控制、表面微觀結構對tio _ 2薄膜光催化性能、透光性影響等。
  9. The static recording by sil system is performed on phase - change medium, and the recorded line width is thinner by the factor of 1. 44 than the recording width without sil system. the properties of sb layer super resolution near - field structure is also studied. the sin / sb / sin film structure is deposited on substrate of k9 glass by rf sputtering technology

    Sil飛行頭系統與光數據存儲光學頭實驗系統相結合,在相變記錄介質上得到了0 . 45 m的靜態記錄線寬,該結果與非sil存儲系統的記錄線寬( 0 . 65 m )相比壓縮了1 . 44倍。
  10. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著薄膜科學與技術的發展,各種薄膜制備方法得到了迅速發展,傳統的所謂鍍膜,已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積( cvd ) 、 pecvd 、 mocvd 、分子束外延( mbe ) 、液相生長、微波法及微波電子共旋( mwecr )等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術,它具有成膜質量高,速率可控性好,通用性強等優點。
  11. Centering at soft x - ray multilayer uniformity technology, we introduce general situation of multilayer, design of multilayer structure, simulation calculation, ion - beam sputtering deposition and evaluation of samples. above all, we carry out study of improving uniformity of period thickness spatial distribution, and develop correction mask for controlling period thickness. as a result, we improve uniformity from 4. 5 % to 2. 0 %, the error of period thickness on ( 130nm field is controlled within 0. 18nm, and the reflectivity reach 35 % at center wavelength 17. 1nm

    特別地,我們設計並應用膜厚擋板補償技術控制多層膜的膜厚分佈,將膜厚分佈非均勻性從4 . 5減小到2 ,周期厚度絕對差值控制在0 . 18nm以內,並且制備得實際多層膜樣品在中心波長17 . 1nm處實測反射率達到35 ,達到實用水平。
  12. Through comparing above results with those of thin films fabricated by rf - sputtering technology, it is indicated that h has almost no influence on the pl properties of films, but different preparation methods of thin films will result in quite different pl properties

    通過與濺射法制備薄膜的結果對比表明:熒光特性不受薄膜中氫含量的影響,但不同方法制備薄膜的熒光特性具有較大差別。
  13. Various of surface modification techniques are gradually developed and all kinds of corrosion resistant materials continuously occur. unbalance magnetron sputtering technology was widely utilized and zrn is an interesting corrosion resistant material

    各種表面改性技術逐步發展起來,各種抗腐材料也不斷出現,其中非平衡磁控濺射技術是近期比較常採用的一種制膜技術, zrn是一種較具吸引力的抗腐材料。
  14. Moreover, in terms of picture quality too, eastone s screens effectively block the return of excess light thanks to the application of original - technology stainless steel sputtering on the rear surface

    並且,在畫質上,我們採用獨創的「不銹鋼噴射」技術,屏蔽了多餘光線的反射。努力實現高清晰高品質畫質。
  15. Through the technology of rf and dc reactive sputtering manufacture, h2s gas sensors have been developed on silicon substrate on which a heater made of pt were attached

    通過交流和直流反應濺射,我們以硅基片(表面上有白金加熱電極)為基底製作h _ 2s氣敏元件。
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